OSSICINI, Stefano
 Distribuzione geografica
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Continente #
NA - Nord America 21.582
EU - Europa 8.637
AS - Asia 2.520
SA - Sud America 24
OC - Oceania 14
AF - Africa 10
Continente sconosciuto - Info sul continente non disponibili 7
Totale 32.794
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Nazione #
US - Stati Uniti d'America 21.533
GB - Regno Unito 3.620
SE - Svezia 1.401
CN - Cina 939
DE - Germania 915
IT - Italia 910
UA - Ucraina 684
SG - Singapore 549
TR - Turchia 452
HK - Hong Kong 373
FI - Finlandia 355
BG - Bulgaria 279
FR - Francia 150
RU - Federazione Russa 82
BE - Belgio 47
IE - Irlanda 42
IN - India 38
VN - Vietnam 35
CA - Canada 34
LT - Lituania 29
MY - Malesia 28
RO - Romania 28
IR - Iran 26
ID - Indonesia 23
NL - Olanda 23
JP - Giappone 14
AU - Australia 12
BZ - Belize 11
GR - Grecia 11
CH - Svizzera 8
ES - Italia 8
NO - Norvegia 7
BR - Brasile 6
CL - Cile 6
KR - Corea 6
PE - Perù 6
AM - Armenia 5
AR - Argentina 5
AT - Austria 5
PL - Polonia 5
RS - Serbia 5
AE - Emirati Arabi Uniti 4
EU - Europa 4
IL - Israele 4
MA - Marocco 4
MX - Messico 4
PK - Pakistan 4
SA - Arabia Saudita 4
A2 - ???statistics.table.value.countryCode.A2??? 3
AL - Albania 3
CZ - Repubblica Ceca 3
HU - Ungheria 3
LK - Sri Lanka 3
PT - Portogallo 3
BD - Bangladesh 2
BY - Bielorussia 2
DK - Danimarca 2
DZ - Algeria 2
KG - Kirghizistan 2
MD - Moldavia 2
NG - Nigeria 2
NZ - Nuova Zelanda 2
PH - Filippine 2
TW - Taiwan 2
AZ - Azerbaigian 1
EC - Ecuador 1
EG - Egitto 1
HR - Croazia 1
IQ - Iraq 1
LU - Lussemburgo 1
LV - Lettonia 1
SI - Slovenia 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
TM - Turkmenistan 1
UZ - Uzbekistan 1
ZA - Sudafrica 1
Totale 32.794
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Città #
Southend 3.179
Fairfield 3.164
Woodbridge 2.001
Houston 1.882
Ashburn 1.747
Chandler 1.715
Jacksonville 1.617
Seattle 1.208
Dearborn 1.096
Wilmington 1.068
Cambridge 1.055
Ann Arbor 1.049
Nyköping 707
Singapore 378
Hong Kong 372
Beijing 326
San Diego 287
Sofia 275
Princeton 272
Izmir 256
Eugene 243
Des Moines 215
Modena 196
Helsinki 122
Bremen 106
London 91
Milan 84
New York 84
Boardman 50
Rome 49
Shanghai 48
Brussels 45
Norwalk 42
Redwood City 42
Hefei 40
Dublin 38
Falls Church 35
Bologna 33
Verona 33
Kunming 32
Nanjing 32
Indiana 31
Jinan 29
San Mateo 28
Dong Ket 26
Augusta 24
Guangzhou 23
Jakarta 22
Kilburn 21
Parma 21
Hounslow 20
Toronto 20
Auburn Hills 17
Chicago 17
Leawood 16
Ardabil 15
Hangzhou 15
Mountain View 15
Shenyang 15
Dallas 14
Fuzhou 14
Los Angeles 14
San Jose 14
Phoenix 13
Nanchang 12
Belize City 11
Padova 11
Saint Petersburg 11
Timisoara 11
Carrù 10
Philadelphia 10
Wuhan 10
Chengdu 9
Monmouth Junction 9
Pescara 9
Prescot 9
Tulare 9
Turin 9
Bari 8
Frankfurt am Main 8
Islington 8
Jiaxing 8
Paris 8
San Francisco 8
Shenzhen 8
Washington 8
Albinea 7
Amsterdam 7
Atlanta 7
Catania 7
Craiova 7
Mumbai 7
New Delhi 7
Ottawa 7
Chiswick 6
Chongqing 6
Hanover 6
Hebei 6
Jinhua 6
Torino 6
Totale 26.054
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Nome #
Doped and codoped silicon nanocrystals: The role of surfaces and interfaces 284
First Principle Studies of B and P Doped Si Nanocrystals 251
SiGe nanowires: structural stability, quantum confinement and electronic properties 216
Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results 214
Surface and confinement effects on the optical and structural properties of silicon nanocrystals 207
Optically- induced defects in Si-H nanoparticles 200
First-principles calculations of electronic coupling effects in silicon nanocrystals: Influence on near band-edge states and on carrier multiplication processes 200
Band-offset driven efficiency of the doping of SiGe core-shell nanowires 195
Energetics and carrier transport in doped Si/SiO2 quantum dots 195
Strain-designed strategy to induce and enhance second-harmonic generation in centrosymmetric and noncentrosymmetric materials 193
I Pinocchi della scienza: Cattive condotte e la struttura della ricerca scientifica THE PINOCCHIOS OF SCIENCE: Misconduct and the Structure of Scientific Research 192
Band-offset driven efficiency of the doping of SiGe core-shell. nanowires 189
First-principle investigations of carrier multiplication in Si nanocrystals: A short review 189
Work Function Measurement of Silicon Germanium Heterostructures Combining Kelvin Force Microscopy and X-ray Photoelectron Emission Microscopy 188
Electron Transport in SiGe Alloy nanowires in the Ballistic Regime from First Principles 187
Electronic structure of the 1x1 YBa2Cu3O7/PrBa2Cu3O7 superlattice: a local spin density approximation with on-site Coulomb interaction 185
Ab initio optoelectronic properties of SiGe nanowires: Role of many-body effects 185
Doping in silicon nanostructures 184
Segregation, quantum confinement effect and band offset for [110] SiGe NWs 181
The electronic and optical properties of silicon nanoclusters: absorption and emission 180
Codoping goes Nano: Structural and Optical Properties of Boron and Phosphorus Codoped Silicon Nanocrystals 180
Monte Carlo simulation of electron transport in Si/SiO2 superlattices 177
Electronic and Optical Properties of Silicon Nanocrystals 176
Structural, Electronic and Surface Properties of Anatase TiO2 Nanocrystals from First Principles 176
Auger recombination in Si and GaAs semiconductors : Ab initio results 175
Carrier multiplication in silicon nanocrystals: ab initio results 173
Ab Initio Electronic Gaps of Ge Nanodots: The Role of Self-Energy Effects 172
First-Principles Study of Silicon Nanocrystals: Structural and Electronic Properties, Absorption, Emission, and Doping. 171
Electronic and optical properties of silicon nanocrystals: structural effects 170
First-principles optical properties of silicon and germanium nanowires 170
High Luminescence in small Si/SiO2 Nanocrystals: a theoretical study 168
Second Harmonic Generation in Silicon Based Heterostructures: The Role of Strain and Symmetry 165
Covalency on the adsorption of Na on Si(111) 164
Local-fields and disorder effects in free-standing and embedded Si nanocrystallites 164
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 164
AES analysis of the growth mechanism of metal layers on metal surfaces 163
The He *(1s, 2s)+Ne interaction potential 163
Ab-initio Electronic and Optical Properties of Low Dimensional Systems: from Single Particle to Many Body Approaches 162
Formation energies of silicon nanocrystals: role of dimension and passivation 162
Silicon nanocrystals from high-temperature annealing: Characterization on device level 162
Optical absorption modulation by selective codoping of SiGe core-shell nanowires 161
First Principles Modeling of Si/Ge Nanostructures for Photovoltaic and Optoelectronic Applications 161
Preferential Positioning, Stability, and Segregation of Dopants in Hexagonal Si Nanowires 161
Electronic and optical properties of Si and Ge nanocrystals: an ab-initio study 159
The influence of silicon nanoclusters on the optical properties of a-SiNx samples: A theoretical study 159
Determination of the Electronic Energy Levels of Colloidal Nanocrystals using Field-Effect Transistors and Ab-Initio Calculations 159
Doping in silicon nanocrystals 158
Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices 158
Work function bowing in Si1−xGex heterostructures: Ab initio results 158
Silicon quantum dots embedded in a SiO2 matrix: From structural study to carrier transport properties 158
Ab-initio investigation of the polarization anisotropy of the optical absorption in (InGa)As-InP superlattices 157
Gain theory and models in silicon nanostructures 157
Silicon Nanoscale Materials: From Theoretical Simulations to Photonic Applications 157
Carrier multiplication between interacting nanocrystals for fostering silicon-based photovoltaics 156
Structural and electronic properties of Si1-xGex alloy nanowires 156
The Role of the Surface Coverage on the Structural and the Electronic Properties of TiO2 Nanocrystals 156
Marie Curie, Hertha Ayrton e le altre. Donne e Scienziate 156
THE ELECTRONIC-PROPERTIES OF THE CAF2-SI(111) SYSTEM - FROM MONOLAYER COVERAGE TO SOLID SOLID INTERFACE 155
The electronic and optical properties of InGaAs/InP and InAlAs/InP superlattices 154
Role of strain in interacting silicon nanoclusters 154
Understanding doping at the nanoscale: the case of codoped Si and Ge nanowires 154
Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties 154
Ab-initio calculation of the optical properties of silicon quantum wires 154
Optical properties of silicon nanocrystallites in SiO2 matrix:Crystalline vs. amorphous case 154
Formation energies of silicon nanocrystals: role of dimension and passivation 154
Image force effects in the barrier height for metal-metal tunneling electrons 153
Second-order nonlinear silicon photonics 153
Electronic, structural and optical properties of hydrogenated silicon nanocrystals: the role of the excited states 153
The luminescence transition in porous silicon: The nature of the electronic states 152
Ab-initio calculation of the electronic (valence and core) and optical properties of interfaces 150
Ab-initio Calculations Of The Electronic Properties of Silicon Nanocrystals: Absorption, Emission, Stokes Shift 150
ROLE OF SYMMETRY REDUCTION IN THE POLARIZATION DEPENDENCE OF THE OPTICAL ABSORPTION IN NON-COMMON ATOM SUPERLATTICES 150
Optical absorption and emission of silicon nanocrystals: From single to collective response 150
THEORETICAL STUDIES OF ABSORPTION, EMISSION AND GAIN IN SILICON NANOSTRUCTURES 150
Carrier Multiplication in Isolated and Interacting Silicon Nanocrystals 149
Ab initio energy loss spectra of Si and Ge nanowires 149
Oxygen vacancy effects on the Schottky barrier height at the Au/TiO2(100) interface: a first principle study 149
Silicon nanocrystals in carbide matrix 148
Conductance fluctuations in Si nanowires studied from first-principles 148
Role of surface passivation and doping in silicon nanocrystals 147
Second-harmonic Generation Spectroscopy from Time-dependent Density-functional Theory 147
Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties 145
Electronic structure of Si(111)-NiSi2(111) A-type and B-type interfaces 145
Role of interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2 145
Gain theory and models in silicon nanostructures 144
Understanding doping in silicon nanostructures 144
Semiclassical and quantum transport in Si/SiO2 superlattices 144
Electronic vacancy states in silicon by the chemical pseudopotential method 144
Hydrogen covered Si(111) surfaces 144
Engineering quantum confined silicon nanostructures: ab-initio study of the structural, electronic and optical properties 144
Si nanostructures embedded in SiO[sub 2]: electronic and optical properties 144
ELECTRONIC-STRUCTURE OF THIN SI LAYERS IN CAF2 - HYBRIDIZATION VERSUS CONFINEMENT 143
Structural Features and Electronic Properties of Group-III, Group-IV and Group-V-doped Si Nanocrystallites 143
Many-body effects on the electronic and optical properties of Si nanowires from ab-initio approaches 143
Auger Lineshape analysis of porous silicon: Experiment and theory 143
First principles optical properties of low dimensional silicon structures 143
Chemical pseudopotential and semiconductor surface states 142
Excitons in Silicon Nanocrystallites: the Nature of Luminescence 142
Silicon−Germanium Nanowires: Chemistry and Physics in Play, from Basic Principles to Advanced Applications 141
Initial formation of the CaF2 interface: a theoretical study 140
Totale 16.433
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Categoria #
all - tutte 137.087
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 137.087
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20206.739 0 0 267 521 821 1.105 1.412 663 961 229 425 335
2020/20215.556 660 214 454 372 530 369 434 631 488 702 391 311
2021/20224.540 166 682 367 348 87 205 289 206 480 340 860 510
2022/20234.653 557 492 298 361 537 827 79 460 558 27 138 319
2023/20242.182 100 171 109 296 422 150 192 221 106 46 133 236
2024/2025591 389 125 77 0 0 0 0 0 0 0 0 0
Totale 33.050