Silicon−germanium alloying is emerging as one of the most promising strategies to engineer heat transport at the nanoscale. Here, we perform first-principles electron transport calculations to assess at what extent such approach can be followed without worsening the electrical conduction properties of the system, providing then a path toward high-efficiency thermoelectric materials.
Electron Transport in SiGe Alloy nanowires in the Ballistic Regime from First Principles / Amato, Michele; Ossicini, Stefano; R., Rurali. - In: NANO LETTERS. - ISSN 1530-6984. - STAMPA. - 12:6(2012), pp. 2717-2721. [10.1021/nl204313v]
Electron Transport in SiGe Alloy nanowires in the Ballistic Regime from First Principles
AMATO, Michele;OSSICINI, Stefano;
2012
Abstract
Silicon−germanium alloying is emerging as one of the most promising strategies to engineer heat transport at the nanoscale. Here, we perform first-principles electron transport calculations to assess at what extent such approach can be followed without worsening the electrical conduction properties of the system, providing then a path toward high-efficiency thermoelectric materials.
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