OSSICINI, Stefano

OSSICINI, Stefano  

Dipartimento di Scienze e Metodi dell'Ingegneria  

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Titolo Data di pubblicazione Autore(i) File
Ab initio calculations of the electronic and optical properties of group IV semiconductor nanostructures embedded in different matrices 1-gen-2015 Guerra, Roberto; Ossicini, Stefano
Ab initio calculations of the electronic and optical properties of silicon quantum dots embedded in different matrices 1-gen-2015 Guerra, R.; Ossicini, S.
Ab Initio Electronic Gaps of Ge Nanodots: The Role of Self-Energy Effects 1-gen-2013 Margherita, Marsili; Silvana, Botti; Maurizia, Palummo; Degoli, Elena; Olivia, Pulci; Hans Christian, Weissker; Miguel A. L., Marques; Ossicini, Stefano; Rodolfo Del, Sole
Ab initio energy loss spectra of Si and Ge nanowires 1-gen-2015 Palummo, Maurizia; Hogan, Conor; Ossicini, Stefano
Ab initio optoelectronic properties of SiGe nanowires: Role of many-body effects 1-gen-2010 M., Palummo; Amato, Michele; Ossicini, Stefano
Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase 1-gen-2020 Ossicini, S.; Marri, I.; Amato, M.; Palummo, M.; Canadell, E.; Rurali, R.
Ab initio study on oxidized silicon clusters and silicon nanocrystals embedded in SiO2 : Beyond the quantum confinement effect 1-gen-2005 M., Luppi; Ossicini, Stefano
Ab-initio calculation of the electronic (valence and core) and optical properties of interfaces 1-gen-1995 Ossicini, Stefano; Bisi, Olmes
Ab-initio calculation of the optical properties of silicon quantum wires 1-gen-1997 Ossicini, Stefano; Biagini, M.; Bertoni, Carlo Maria; Roma, G.; Bisi, Olmes
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 1-gen-2009 Degoli, Elena; Guerra, Roberto; Iori, Federico; Magri, Rita; Marri, Ivan; O., Pulci; Bisi, Olmes; Ossicini, Stefano
Ab-initio Calculations Of The Electronic Properties of Hydrogenated and Oxidized Silicon Nanocrystrals: Ground and Excited States 1-gen-2005 Ossicini, Stefano; Bisi, Olmes; Cantele, G; Degoli, Elena; DEL SOLE, R; Gatti, M; Incze, A; Iori, Federico; Luppi, Eleonora; Magri, Rita; Ninno, D; Onida, G; Pulci, O.
Ab-initio Calculations Of The Electronic Properties of Silicon Nanocrystals: Absorption, Emission, Stokes Shift 1-gen-2005 Degoli, Elena; G., Cantele; E., Luppi; Magri, Rita; Ossicini, Stefano; D., Ninno; Bisi, Olmes; G., Onida; M., Gatti; A., Incze; O., Pulci; R., DEL SOLE
Ab-initio Electronic and Optical Properties of Low Dimensional Systems: from Single Particle to Many Body Approaches 1-gen-2007 M., Palummo; M., Bruno; O., Pulci; Luppi, Eleonora; Degoli, Elena; Ossicini, Stefano; R., DEL SOLE
AB-initio excited states calculations for semiconductor materials: From bulk to low dimensional systems 1-gen-2005 Palummo, M.; Bruno, M.; Del Sole, R.; Ossicini, S.
Ab-initio excited states calculations of semiconductor materials: from bulk to low dimensional systems 1-gen-2005 Maurizia, Palummo; Ossicini, Stefano; Mauro, Bruno; RODOLFO DEL, Sole
Ab-initio investigation of the polarization anisotropy of the optical absorption in (InGa)As-InP superlattices 1-gen-1998 Magri, Rita; Ossicini, Stefano
Ab-initio structural and electronic properties of hydrogenated silicon nanoclusters in their ground and excited state 1-gen-2004 Degoli, Elena; G., Cantele; E., Luppi; Magri, Rita; D., Ninno; Bisi, Olmes; Ossicini, Stefano
AES analysis of the growth mechanism of metal layers on metal surfaces 1-gen-1985 Ossicini, Stefano; Ciccacci, F; Memeo, R.
Auger Lineshape analysis of porous silicon: Experiment and theory 1-gen-1996 L., Dorigoni; L., Pavesi; Bisi, Olmes; L., Calliari; M., Anderle; Ossicini, Stefano
Auger recombination in Si and GaAs semiconductors : Ab initio results 1-gen-2011 Govoni, Marco; Marri, Ivan; Ossicini, Stefano