OSSICINI, Stefano
OSSICINI, Stefano
Dipartimento di Scienze e Metodi dell'Ingegneria
Ab initio calculations of the electronic and optical properties of group IV semiconductor nanostructures embedded in different matrices
2015-01-01 Guerra, Roberto; Ossicini, Stefano
Ab initio calculations of the electronic and optical properties of silicon quantum dots embedded in different matrices
2015-01-01 Guerra, R.; Ossicini, S.
Ab Initio Electronic Gaps of Ge Nanodots: The Role of Self-Energy Effects
2013-01-01 Margherita, Marsili; Silvana, Botti; Maurizia, Palummo; Degoli, Elena; Olivia, Pulci; Hans Christian, Weissker; Miguel A. L., Marques; Ossicini, Stefano; Rodolfo Del, Sole
Ab initio energy loss spectra of Si and Ge nanowires
2015-01-01 Palummo, Maurizia; Hogan, Conor; Ossicini, Stefano
Ab initio optoelectronic properties of SiGe nanowires: Role of many-body effects
2010-01-01 M., Palummo; Amato, Michele; Ossicini, Stefano
Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase
2020-01-01 Ossicini, S.; Marri, I.; Amato, M.; Palummo, M.; Canadell, E.; Rurali, R.
Ab initio study on oxidized silicon clusters and silicon nanocrystals embedded in SiO2 : Beyond the quantum confinement effect
2005-01-01 M., Luppi; Ossicini, Stefano
Ab-initio calculation of the electronic (valence and core) and optical properties of interfaces
1995-01-01 Ossicini, Stefano; Bisi, Olmes
Ab-initio calculation of the optical properties of silicon quantum wires
1997-01-01 Ossicini, Stefano; Biagini, M.; Bertoni, Carlo Maria; Roma, G.; Bisi, Olmes
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures
2009-01-01 Degoli, Elena; Guerra, Roberto; Iori, Federico; Magri, Rita; Marri, Ivan; O., Pulci; Bisi, Olmes; Ossicini, Stefano
Ab-initio Calculations Of The Electronic Properties of Hydrogenated and Oxidized Silicon Nanocrystrals: Ground and Excited States
2005-01-01 Ossicini, Stefano; Bisi, Olmes; Cantele, G; Degoli, Elena; DEL SOLE, R; Gatti, M; Incze, A; Iori, Federico; Luppi, Eleonora; Magri, Rita; Ninno, D; Onida, G; Pulci, O.
Ab-initio Calculations Of The Electronic Properties of Silicon Nanocrystals: Absorption, Emission, Stokes Shift
2005-01-01 Degoli, Elena; G., Cantele; E., Luppi; Magri, Rita; Ossicini, Stefano; D., Ninno; Bisi, Olmes; G., Onida; M., Gatti; A., Incze; O., Pulci; R., DEL SOLE
Ab-initio Electronic and Optical Properties of Low Dimensional Systems: from Single Particle to Many Body Approaches
2007-01-01 M., Palummo; M., Bruno; O., Pulci; Luppi, Eleonora; Degoli, Elena; Ossicini, Stefano; R., DEL SOLE
AB-initio excited states calculations for semiconductor materials: From bulk to low dimensional systems
2005-01-01 Palummo, M.; Bruno, M.; Del Sole, R.; Ossicini, S.
Ab-initio excited states calculations of semiconductor materials: from bulk to low dimensional systems
2005-01-01 Maurizia, Palummo; Ossicini, Stefano; Mauro, Bruno; RODOLFO DEL, Sole
Ab-initio investigation of the polarization anisotropy of the optical absorption in (InGa)As-InP superlattices
1998-01-01 Magri, Rita; Ossicini, Stefano
Ab-initio structural and electronic properties of hydrogenated silicon nanoclusters in their ground and excited state
2004-01-01 Degoli, Elena; G., Cantele; E., Luppi; Magri, Rita; D., Ninno; Bisi, Olmes; Ossicini, Stefano
AES analysis of the growth mechanism of metal layers on metal surfaces
1985-01-01 Ossicini, Stefano; Ciccacci, F; Memeo, R.
Auger Lineshape analysis of porous silicon: Experiment and theory
1996-01-01 L., Dorigoni; L., Pavesi; Bisi, Olmes; L., Calliari; M., Anderle; Ossicini, Stefano
Auger recombination in Si and GaAs semiconductors : Ab initio results
2011-01-01 Govoni, Marco; Marri, Ivan; Ossicini, Stefano