OSSICINI, Stefano

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Pubblicazioni

Risultati 1 - 20 di 245 (tempo di esecuzione: 0.001 secondi).

	Titolo	Data di pubblicazione	Autore(i)
1	Ab initio calculations of the electronic and optical properties of group IV semiconductor nanostructures embedded in different matrices	2015	Guerra, Roberto; Ossicini, Stefano
2	Ab Initio Electronic Gaps of Ge Nanodots: The Role of Self-Energy Effects	2013	Margherita, Marsili; Silvana, Botti; Maurizia, Palummo; Degoli, Elena; Olivia, Pulci; Hans Christian, Weissker; Miguel A. L., Marques; Ossicini, Stefano; Rodolfo Del, Sole
3	Ab initio energy loss spectra of Si and Ge nanowires	2015	Palummo, Maurizia; Hogan, Conor; Ossicini, Stefano
4	Ab initio optoelectronic properties of SiGe nanowires: Role of many-body effects	2010	M., Palummo; Amato, Michele; Ossicini, Stefano
5	Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase	2020	Ossicini, S.; Marri, I.; Amato, M.; Palummo, M.; Canadell, E.; Rurali, R.
6	Ab initio study on oxidized silicon clusters and silicon nanocrystals embedded in SiO2 : Beyond the quantum confinement effect	2005	M., Luppi; Ossicini, Stefano
7	Ab-initio calculation of the electronic (valence and core) and optical properties of interfaces	1995	Ossicini, Stefano; Bisi, Olmes
8	Ab-initio calculation of the optical properties of silicon quantum wires	1997	Ossicini, Stefano; Biagini, M.; Bertoni, Carlo Maria; Roma, G.; Bisi, Olmes
9	Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures	2009	Degoli, Elena; Guerra, Roberto; Iori, Federico; Magri, Rita; Marri, Ivan; O., Pulci; Bisi, Olmes; Ossicini, Stefano
10	Ab-initio Calculations Of The Electronic Properties of Hydrogenated and Oxidized Silicon Nanocrystrals: Ground and Excited States	2005	Ossicini, Stefano; Bisi, Olmes; Cantele, G; Degoli, Elena; DEL SOLE, R; Gatti, M; Incze, A; Iori, Federico; Luppi, Eleonora; Magri, Rita; Ninno, D; Onida, G; Pulci, O.
11	Ab-initio Calculations Of The Electronic Properties of Silicon Nanocrystals: Absorption, Emission, Stokes Shift	2005	Degoli, Elena; G., Cantele; E., Luppi; Magri, Rita; Ossicini, Stefano; D., Ninno; Bisi, Olmes; G., Onida; M., Gatti; A., Incze; O., Pulci; R., Del Sole
12	Ab-initio Electronic and Optical Properties of Low Dimensional Systems: from Single Particle to Many Body Approaches	2007	M., Palummo; M., Bruno; O., Pulci; Luppi, Eleonora; Degoli, Elena; Ossicini, Stefano; R., DEL SOLE
13	Ab-initio excited states calculations of semiconductor materials: from bulk to low dimensional systems	2005	Maurizia, Palummo; Ossicini, Stefano; Mauro, Bruno; RODOLFO DEL, Sole
14	Ab-initio investigation of the polarization anisotropy of the optical absorption in (InGa)As-InP superlattices	1998	Magri, Rita; Ossicini, Stefano
15	Ab-initio structural and electronic properties of hydrogenated silicon nanoclusters in their ground and excited state	2004	Degoli, Elena; G., Cantele; E., Luppi; Magri, Rita; D., Ninno; Bisi, Olmes; Ossicini, Stefano
16	AES analysis of the growth mechanism of metal layers on metal surfaces	1985	Ossicini, Stefano; Ciccacci, F; Memeo, R.
17	Auger Lineshape analysis of porous silicon: Experiment and theory	1996	L., Dorigoni; L., Pavesi; Bisi, Olmes; L., Calliari; M., Anderle; Ossicini, Stefano
18	Auger recombination in Si and GaAs semiconductors : Ab initio results	2011	Govoni, Marco; Marri, Ivan; Ossicini, Stefano
19	Band structure analysis in SiGe nanowires	2012	M., Amato; M., Palummo; Ossicini, Stefano
20	Band-offset driven efficiency of the doping of SiGe core-shell nanowires	2011	Amato, Michele; Ossicini, Stefano; R., Rurali

Dettaglio

Nome completo

OSSICINI, Stefano

Afferenza

Dipartimento di Scienze e Metodi dell'Ingegneria