ABSTRACT We study the effect of H. O passivation and inter-wire interaction on the optical properties of nanoscale Si wires. We find that wires with diameters as small as 10-25 AA are active in the visible range. Inter-wire interaction leads to the presence of localized states which lower the band gap energy. The presence of dangling bonds generates broad features in the infrared region. O-Si bonds reduce the optical threshold. These results are important for the discussions concerning absorption and luminescence in porous silicon.
Ab-initio calculation of the optical properties of silicon quantum wires / Ossicini, Stefano; Biagini, M.; Bertoni, Carlo Maria; Roma, G.; Bisi, Olmes. - In: MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS. - ISSN 0272-9172. - STAMPA. - 452:(1997), pp. 63-68. ((Intervento presentato al convegno Symposium Q on Advances in Microcrystalline and Nanocrystalline Semiconductors - 1996, at the 1996 MRS Fall Meeting tenutosi a BOSTON, MA nel DEC 02-06, 1996.
Ab-initio calculation of the optical properties of silicon quantum wires
OSSICINI, Stefano;BERTONI, Carlo Maria;BISI, Olmes
1997-01-01
Abstract
ABSTRACT We study the effect of H. O passivation and inter-wire interaction on the optical properties of nanoscale Si wires. We find that wires with diameters as small as 10-25 AA are active in the visible range. Inter-wire interaction leads to the presence of localized states which lower the band gap energy. The presence of dangling bonds generates broad features in the infrared region. O-Si bonds reduce the optical threshold. These results are important for the discussions concerning absorption and luminescence in porous silicon.
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