ABSTRACT We study the effect of H. O passivation and inter-wire interaction on the optical properties of nanoscale Si wires. We find that wires with diameters as small as 10-25 AA are active in the visible range. Inter-wire interaction leads to the presence of localized states which lower the band gap energy. The presence of dangling bonds generates broad features in the infrared region. O-Si bonds reduce the optical threshold. These results are important for the discussions concerning absorption and luminescence in porous silicon.

Ab-initio calculation of the optical properties of silicon quantum wires / Ossicini, Stefano; Biagini, M.; Bertoni, Carlo Maria; Roma, G.; Bisi, Olmes. - In: MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS. - ISSN 0272-9172. - STAMPA. - 452:(1997), pp. 63-68. (Intervento presentato al convegno Symposium Q on Advances in Microcrystalline and Nanocrystalline Semiconductors - 1996, at the 1996 MRS Fall Meeting tenutosi a BOSTON, MA nel DEC 02-06, 1996).

Ab-initio calculation of the optical properties of silicon quantum wires

OSSICINI, Stefano;BERTONI, Carlo Maria;BISI, Olmes
1997

Abstract

ABSTRACT We study the effect of H. O passivation and inter-wire interaction on the optical properties of nanoscale Si wires. We find that wires with diameters as small as 10-25 AA are active in the visible range. Inter-wire interaction leads to the presence of localized states which lower the band gap energy. The presence of dangling bonds generates broad features in the infrared region. O-Si bonds reduce the optical threshold. These results are important for the discussions concerning absorption and luminescence in porous silicon.
1997
Symposium Q on Advances in Microcrystalline and Nanocrystalline Semiconductors - 1996, at the 1996 MRS Fall Meeting
BOSTON, MA
DEC 02-06, 1996
452
63
68
Ossicini, Stefano; Biagini, M.; Bertoni, Carlo Maria; Roma, G.; Bisi, Olmes
Ab-initio calculation of the optical properties of silicon quantum wires / Ossicini, Stefano; Biagini, M.; Bertoni, Carlo Maria; Roma, G.; Bisi, Olmes. - In: MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS. - ISSN 0272-9172. - STAMPA. - 452:(1997), pp. 63-68. (Intervento presentato al convegno Symposium Q on Advances in Microcrystalline and Nanocrystalline Semiconductors - 1996, at the 1996 MRS Fall Meeting tenutosi a BOSTON, MA nel DEC 02-06, 1996).
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/459154
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 1
  • ???jsp.display-item.citation.isi??? 3
social impact