Density-functional theory calculations have been carried out in order to study the structural, electronic, and optical properties of oxidized silicon clusters and silicon nanocrystals embedded in SiO2 . For the isolated clusters, different Si/O bonding geometries and various levels of oxidation have been investigated, checking also the dependence of the results on the structure size. We provide strong evidences that not only the quantum confinement effect but also the chemistry at the interface has to be taken into account in order to understand the physical properties of these systems. In particular we show how the multiple presence of silanonelike Si=O bonds can be a reliable model for explaining the photoluminescence redshift observed in oxidized porous silicon samples and it can be used as possible explanation also for the unexpected large photoluminescence bandwidth in single oxidized Si quantum dots.
Ab initio study on oxidized silicon clusters and silicon nanocrystals embedded in SiO2 : Beyond the quantum confinement effect / M., Luppi; Ossicini, Stefano. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 71:(2005), pp. 035340-1-035340-15.
Ab initio study on oxidized silicon clusters and silicon nanocrystals embedded in SiO2 : Beyond the quantum confinement effect
OSSICINI, Stefano
2005-01-01
Abstract
Density-functional theory calculations have been carried out in order to study the structural, electronic, and optical properties of oxidized silicon clusters and silicon nanocrystals embedded in SiO2 . For the isolated clusters, different Si/O bonding geometries and various levels of oxidation have been investigated, checking also the dependence of the results on the structure size. We provide strong evidences that not only the quantum confinement effect but also the chemistry at the interface has to be taken into account in order to understand the physical properties of these systems. In particular we show how the multiple presence of silanonelike Si=O bonds can be a reliable model for explaining the photoluminescence redshift observed in oxidized porous silicon samples and it can be used as possible explanation also for the unexpected large photoluminescence bandwidth in single oxidized Si quantum dots.File | Dimensione | Formato | |
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