CONTENTS 1. Introduction 1371 2. Growth Techniques, Morphology, and Structural Properties 1373 2.1. Alloyed Nanowires 1373 2.2. Axial Heterostructures 1375 2.3. Radial Heterostructures 1377 3. Chemical and Physical Properties 1379 3.1. Electronic Properties 1379 3.1.1. Modulation of the Electronic Properties by Composition Control 1379 3.1.2. Interfaces at Work: Strain, Band-Offset, and Carrier Gases 1381 3.1.3. Doped Nanowires 1384 3.2. Thermal and Thermoelectric Properties 1385 4. Theoretical Modeling 1389 4.1. Electronic Structure 1390 4.1.1. Quantum Confinement Effect and Band Offset 1391 4.1.2. Size Effects 1393 4.1.3. Alloying and Interface Effects 1394 4.1.4. Strain Effects 1395 4.1.5. Addition of Impurities 1395 4.1.6. Electronic Transport 1396 4.1.7. Optical Properties 1397 4.2. Phonons and Thermal Conductivity 1398 4.2.1. Breakdown of Fourier’s Law at Nanoscale 1398 4.2.2. Numerical Simulations of Thermal Properties 1398 5. Devices and Applications 1402 5.1. High-Performance Nanoelectronic Components 1403 5.1.1. Si1−xGex Alloy Nanowire Transistor 1403 5.1.2. Si-Shell Ge-Core Nanowire Transistor 1404 5.2. From Quantum Transport to Superconductivity: SiGe Nanowires As Platforms for Fundamental Physics Studies 1405 6. Conclusions and Perspectives 1405 Author Information 1406 Corresponding Authors 1406 Notes 1406 Biographies 1407 Acknowledgments 1408 References 1408

Silicon−Germanium Nanowires: Chemistry and Physics in Play, from Basic Principles to Advanced Applications / M., Amato; M., Palummo; R., Rurali; Ossicini, Stefano. - In: CHEMICAL REVIEWS. - ISSN 0009-2665. - STAMPA. - 114:(2014), pp. 1371-1412. [10.1021/cr400261y]

Silicon−Germanium Nanowires: Chemistry and Physics in Play, from Basic Principles to Advanced Applications

OSSICINI, Stefano
2014

Abstract

CONTENTS 1. Introduction 1371 2. Growth Techniques, Morphology, and Structural Properties 1373 2.1. Alloyed Nanowires 1373 2.2. Axial Heterostructures 1375 2.3. Radial Heterostructures 1377 3. Chemical and Physical Properties 1379 3.1. Electronic Properties 1379 3.1.1. Modulation of the Electronic Properties by Composition Control 1379 3.1.2. Interfaces at Work: Strain, Band-Offset, and Carrier Gases 1381 3.1.3. Doped Nanowires 1384 3.2. Thermal and Thermoelectric Properties 1385 4. Theoretical Modeling 1389 4.1. Electronic Structure 1390 4.1.1. Quantum Confinement Effect and Band Offset 1391 4.1.2. Size Effects 1393 4.1.3. Alloying and Interface Effects 1394 4.1.4. Strain Effects 1395 4.1.5. Addition of Impurities 1395 4.1.6. Electronic Transport 1396 4.1.7. Optical Properties 1397 4.2. Phonons and Thermal Conductivity 1398 4.2.1. Breakdown of Fourier’s Law at Nanoscale 1398 4.2.2. Numerical Simulations of Thermal Properties 1398 5. Devices and Applications 1402 5.1. High-Performance Nanoelectronic Components 1403 5.1.1. Si1−xGex Alloy Nanowire Transistor 1403 5.1.2. Si-Shell Ge-Core Nanowire Transistor 1404 5.2. From Quantum Transport to Superconductivity: SiGe Nanowires As Platforms for Fundamental Physics Studies 1405 6. Conclusions and Perspectives 1405 Author Information 1406 Corresponding Authors 1406 Notes 1406 Biographies 1407 Acknowledgments 1408 References 1408
2014
114
1371
1412
Silicon−Germanium Nanowires: Chemistry and Physics in Play, from Basic Principles to Advanced Applications / M., Amato; M., Palummo; R., Rurali; Ossicini, Stefano. - In: CHEMICAL REVIEWS. - ISSN 0009-2665. - STAMPA. - 114:(2014), pp. 1371-1412. [10.1021/cr400261y]
M., Amato; M., Palummo; R., Rurali; Ossicini, Stefano
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/995713
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