The aim of this work is to investigate the structural, electronic and optical properties of hydrogenated Si nanoclusters (H-Si-nc) in their ground and excited state configurations. Structural relaxations have been fully taken into account in all cases through total energy pseudopotential calculations. Recent results about ab-initio calculations of Stokes shift as a function of the cluster dimension and of optical gain will be presented here. A structural model that can be linked to the four level scheme recently invoked to explain the experimental outcomes relative to the observed optical gain in Si-nc embedded in a SiO2 matrix will be suggested too.

Electronic and optical properties of silicon nanocrystals: structural effects / Degoli, Elena; Ossicini, Stefano; M., Luppi; E., Luppi; Magri, Rita; G., Cantele; D., Ninno; N., Iadonisi. - In: MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS. - ISSN 0272-9172. - STAMPA. - 770(2003), pp. I.9.1-I.9.6.

I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Powered by IRIS-about IRIS-Utilizzo dei cookie

 Copyright © 2022