ABSTRACT Freshly etched porous silicon shows the structure of a crystalline skeleton with a connected undulating-wire morphology, in aged porous silicon samples the presence of Si dots is predominant. In this paper we present, for the first time, ab-initio results of the electronic and optical properties of undulating Si quantum wires, moreover the transition from Si quantum wires to Si quantum dots is also discussed
From undulating Si quantum wires to Si quantum dots: a model for porous silicon / Degoli, Elena; Luppi, Marcello; Ossicini, Stefano. - In: PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH. - ISSN 0031-8965. - STAMPA. - 182:1(2000), pp. 301-308. [10.1002/1521-396X(200011)182:1<301::AID-PSSA301>3.0.CO;2-N]
From undulating Si quantum wires to Si quantum dots: a model for porous silicon
DEGOLI, Elena;LUPPI, Marcello;OSSICINI, Stefano
2000
Abstract
ABSTRACT Freshly etched porous silicon shows the structure of a crystalline skeleton with a connected undulating-wire morphology, in aged porous silicon samples the presence of Si dots is predominant. In this paper we present, for the first time, ab-initio results of the electronic and optical properties of undulating Si quantum wires, moreover the transition from Si quantum wires to Si quantum dots is also discussed
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