The recently discovered method for the production of an ideally H-terminated, stable and easily transferable Si(111)1 × 1 surface renews the interest for this prototypical system. Through a density functional description of the electronic structure based on pseudopotential and LMTO methods, we discuss in detail spectroscopical information, bond geometry, stretching frequency and the energetics of this surface. Further attention is devoted to the chemisorption of atomic hydrogen on the Si(111)2 × 1 surface and to the removal of the reconstruction, which leads to a less perfect 1 × 1 surface.
Hydrogen covered Si(111) surfaces / BUONGIORNO NARDELLI, M.; Finocchi, F.; Palummo, M.; DI FELICE, R.; Bertoni, Carlo Maria; Bernardini, F.; Ossicini, Stefano. - In: SURFACE SCIENCE. - ISSN 0039-6028. - STAMPA. - 269/270:(1992), pp. 879-886.
Hydrogen covered Si(111) surfaces
BERTONI, Carlo Maria;OSSICINI, Stefano
1992
Abstract
The recently discovered method for the production of an ideally H-terminated, stable and easily transferable Si(111)1 × 1 surface renews the interest for this prototypical system. Through a density functional description of the electronic structure based on pseudopotential and LMTO methods, we discuss in detail spectroscopical information, bond geometry, stretching frequency and the energetics of this surface. Further attention is devoted to the chemisorption of atomic hydrogen on the Si(111)2 × 1 surface and to the removal of the reconstruction, which leads to a less perfect 1 × 1 surface.Pubblicazioni consigliate
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