Starting from experimental findings and interface growth problems in Si/Ge superlattices, we have investigated through ab initio methods the concurrent and competitive behavior of strain and defects in the second-harmonic generation process. Interpreting the second-harmonic intensities as a function of the different nature and percentage of defects together with the strain induced at the interface between Si and Ge, we found a way to tune and enhance the second-harmonic generation response of these systems.

Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices / Bertocchi, Matteo; E., Luppi; Degoli, Elena; V., Véniard; Ossicini, Stefano. - In: THE JOURNAL OF CHEMICAL PHYSICS. - ISSN 0021-9606. - STAMPA. - 140:(2014), pp. 214705-1-214705-6. [10.1063/1.4880756]

Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices

BERTOCCHI, MATTEO;DEGOLI, Elena;OSSICINI, Stefano
2014

Abstract

Starting from experimental findings and interface growth problems in Si/Ge superlattices, we have investigated through ab initio methods the concurrent and competitive behavior of strain and defects in the second-harmonic generation process. Interpreting the second-harmonic intensities as a function of the different nature and percentage of defects together with the strain induced at the interface between Si and Ge, we found a way to tune and enhance the second-harmonic generation response of these systems.
140
214705-1
214705-6
Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices / Bertocchi, Matteo; E., Luppi; Degoli, Elena; V., Véniard; Ossicini, Stefano. - In: THE JOURNAL OF CHEMICAL PHYSICS. - ISSN 0021-9606. - STAMPA. - 140:(2014), pp. 214705-1-214705-6. [10.1063/1.4880756]
Bertocchi, Matteo; E., Luppi; Degoli, Elena; V., Véniard; Ossicini, Stefano
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1024716
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