ABSTRACT In this work we investigate the transport properties of Si/SiO2 superlattices with a multiband one-particle Monte Carlo simulator. The band structure of the system is obtained analytically by solving the Kronig-Penney potential in a tight binding approximation along the growth direction z while we have assumed parabolic dispersion in the in-plane directions. We have introduced in the simulator confined optical phonons, both polar and non polar, as scattering mechanisms. Owing to the very flat shape of the bands along the growth direction, very low drift velocities are obtained for vertical transport. However it turns out that for oblique fields, the in-plane component of the electric field strongly influences the transport properties along the vertical direction as effect of carrier heating. In particular higher vertical drift velocities can be obtained.
Monte Carlo simulation of electron transport in Si/SiO2 superlattices / Rosini, Marcello; Jacoboni, Carlo; Ossicini, Stefano. - STAMPA. - 4808:(2002), pp. 170-179. (Intervento presentato al convegno Optical Properties of Nanocrystals tenutosi a Seattle, WA, usa nel 9 July 2002 through 11 July 2002) [10.1117/12.452215].
Monte Carlo simulation of electron transport in Si/SiO2 superlattices
ROSINI, Marcello;JACOBONI, Carlo;OSSICINI, Stefano
2002
Abstract
ABSTRACT In this work we investigate the transport properties of Si/SiO2 superlattices with a multiband one-particle Monte Carlo simulator. The band structure of the system is obtained analytically by solving the Kronig-Penney potential in a tight binding approximation along the growth direction z while we have assumed parabolic dispersion in the in-plane directions. We have introduced in the simulator confined optical phonons, both polar and non polar, as scattering mechanisms. Owing to the very flat shape of the bands along the growth direction, very low drift velocities are obtained for vertical transport. However it turns out that for oblique fields, the in-plane component of the electric field strongly influences the transport properties along the vertical direction as effect of carrier heating. In particular higher vertical drift velocities can be obtained.
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