Carrier Multiplication (CM) is a Coulomb-driven non-radiative recombination mechanism which leads to the generation of multiple electron-hole pairs after absorption of a single high-energy photon. Recently a new CM process, termed space separated quantum cutting, was introduced to explain a set of new experiments conducted in dense arrays of silicon nanocrystals. The occurrence of this effect was hypothesized to generate the formation of Auger unaffected multiexciton configurations constituted by single electron-hole pairs distributed on different interacting naocrystals. In this work we discuss ab-initio results obtained by our group in the study of CM effects in systems of strongly interacting silicon nanocrystals. By solving a set of rate equations, we simulate the time evolution of the number of electron-hole pairs generated in dense arrays of silicon nanocrystals after absorption of high energy photons, by describing the circumstances under which CM dynamics can lead to the generation of Auger unaffected multiexciton configurations.

First-principle investigations of carrier multiplication in Si nanocrystals: A short review / Marri, Ivan; Ossicini, Stefano. - In: AIP CONFERENCE PROCEEDINGS. - ISSN 0094-243X. - 1990:(2018), pp. 1-9. (Intervento presentato al convegno NANOINNOVATION 2017 tenutosi a Rome, Italy nel 26–29 September 2017) [10.1063/1.5047756].

First-principle investigations of carrier multiplication in Si nanocrystals: A short review

Marri, Ivan
;
Ossicini, Stefano
2018

Abstract

Carrier Multiplication (CM) is a Coulomb-driven non-radiative recombination mechanism which leads to the generation of multiple electron-hole pairs after absorption of a single high-energy photon. Recently a new CM process, termed space separated quantum cutting, was introduced to explain a set of new experiments conducted in dense arrays of silicon nanocrystals. The occurrence of this effect was hypothesized to generate the formation of Auger unaffected multiexciton configurations constituted by single electron-hole pairs distributed on different interacting naocrystals. In this work we discuss ab-initio results obtained by our group in the study of CM effects in systems of strongly interacting silicon nanocrystals. By solving a set of rate equations, we simulate the time evolution of the number of electron-hole pairs generated in dense arrays of silicon nanocrystals after absorption of high energy photons, by describing the circumstances under which CM dynamics can lead to the generation of Auger unaffected multiexciton configurations.
2018
NANOINNOVATION 2017
Rome, Italy
26–29 September 2017
1990
1
9
Marri, Ivan; Ossicini, Stefano
First-principle investigations of carrier multiplication in Si nanocrystals: A short review / Marri, Ivan; Ossicini, Stefano. - In: AIP CONFERENCE PROCEEDINGS. - ISSN 0094-243X. - 1990:(2018), pp. 1-9. (Intervento presentato al convegno NANOINNOVATION 2017 tenutosi a Rome, Italy nel 26–29 September 2017) [10.1063/1.5047756].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1165907
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