MARRI, Ivan

MARRI, Ivan  

Dipartimento di Scienze e Metodi dell'Ingegneria  

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Risultati 1 - 20 di 39 (tempo di esecuzione: 0.028 secondi).
Titolo Data di pubblicazione Autore(i) File
Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase 1-gen-2020 Ossicini, S.; Marri, I.; Amato, M.; Palummo, M.; Canadell, E.; Rurali, R.
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 1-gen-2009 Degoli, Elena; Guerra, Roberto; Iori, Federico; Magri, Rita; Marri, Ivan; O., Pulci; Bisi, Olmes; Ossicini, Stefano
Angular and polarization dependence of x-ray resonant elastic scattering in transition metals 1-gen-2006 Marri, Ivan; Bertoni, Carlo Maria; Ferriani, P; Joly, Y.
Auger recombination in Si and GaAs semiconductors : Ab initio results 1-gen-2011 Govoni, Marco; Marri, Ivan; Ossicini, Stefano
Carrier multiplication between interacting nanocrystals for fostering silicon-based photovoltaics 1-gen-2012 Govoni, Marco; Marri, Ivan; Ossicini, Stefano
Carrier Multiplication in Isolated and Interacting Silicon Nanocrystals 1-gen-2015 Marri, Ivan; Ossicini, Stefano; Govoni, M.
Carrier Multiplication in Silicon Nanocrystals: Theoretical Methodologies and Role of the Passivation 1-gen-2017 Marri, I.; Govoni, M.; Ossicini, S.
Carrier multiplication in silicon nanocrystals: ab initio results 1-gen-2015 Marri, Ivan; Govoni, Marco; Ossicini, Stefano
Doped and codoped silicon nanocrystals: The role of surfaces and interfaces 1-gen-2017 Marri, Ivan; Degoli, Elena; Ossicini, Stefano
Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties 1-gen-2006 Iori, Federico; Degoli, Elena; Luppi, Eleonora; Magri, Rita; Marri, Ivan; G., Cantele; D., Ninno; F., Trani; Ossicini, Stefano
Electronic and Optical Properties of Si, Ge and Sige Low Dimensional Systems: Ab-Initio Results 1-gen-2021 Marri, Ivan; Ossicini, Stefano
Engineering Silicon Nanocrystals: Theoretical study of the effect of Codoping with Boron and Phosphorus 1-gen-2007 Iori, Federico; Degoli, Elena; Magri, Rita; Marri, Ivan; G., Cantele; D., Ninno; F., Trani; O., Pulci; Ossicini, Stefano
Evolution of the Electronic and Optical Properties of Meta-Stable Allotropic Forms of 2D Tellurium for Increasing Number of Layers 1-gen-2022 Grillo, Simone; Pulci, Olivia; Marri, Ivan
First Principle Studies of B and P Doped Si Nanocrystals 1-gen-2018 Marri, Ivan; Degoli, Elena; Ossicini, Stefano
First Principles Modeling of Si/Ge Nanostructures for Photovoltaic and Optoelectronic Applications 1-gen-2018 Marri, I.; Amato, M.; Guerra, R.; Ossicini, S.
First-principle investigations of carrier multiplication in Si nanocrystals: A short review 1-gen-2018 Marri, Ivan; Ossicini, Stefano
First-principles calculations of electronic coupling effects in silicon nanocrystals: Influence on near band-edge states and on carrier multiplication processes 1-gen-2016 Marri, Ivan; Govoni, Marco; Ossicini, Stefano
First-Principles Study of Silicon Nanocrystals: Structural and Electronic Properties, Absorption, Emission, and Doping. 1-gen-2008 OSSICINI, Stefano; BISI, Olmes; DEGOLI, Elena; MARRI, Ivan; F., IORI; E., LUPPI; MAGRI, Rita; R., POLI; G., CANTELE; D., NINNO; F., TRANI; M., MARSILI; O., PULCI; V., OLEVANO; M., GATTI; K., GAAL NAGY; A., INCZE; G., ONIDA
Magneto-Electric Interactions Probed by X-ray Optical Activity 1-gen-2005 J., Goulon; A., Rogalev; F., Wilhelm; N., Jaouen; C., Goulon Ginet; P., Carra; Marri, Ivan; Brouder, C. h.
Many-body perturbation theory calculations using the yambo code 1-gen-2019 Sangalli, D.; Ferretti, A.; Miranda, H.; Attaccalite, C.; Marri, I.; Cannuccia, E.; Melo, P.; Marsili, M.; Paleari, F.; Marrazzo, A.; Prandini, G.; Bonfa, P.; Atambo, M. O.; Affinito, F.; Palummo, M.; Molina-Sanchez, A.; Hogan, C.; Gruning, M.; Varsano, D.; Marini, A.