Doping control at the nanoscale can be used to modify optical and electronic properties thus inducing interesting effects that cannot be observed in pure systems. For instance, it has been shownthat luminescence energies in silicon nanocrystals can be tuned by properly controlling the impurities, for example by boron (B) and phosphorus (P) codoping. Starting from hydrogen-terminated silicon nanoclusters, we have previously calculated from first-principles that codoping results are always energetically favored with respect to single B- or P-doping and that the two impurities tend to occupy nearest neighbor sites near the surface. The codoped Si nanoclusters present band-edge states localizedon the impurities which are responsible for the red-shift of the absorption thresholds with respect to that of pure undoped Si nanoclusters. Here we investigate how the properties of the codoped nanoclusters are influenced by adding one or two more impurities. Moreover we study also the effect of B- and P-codopingon the electronic and optical properties of Si nanowires, thus investigating the role of dimensionality, 0-versus 1-dimensionality, of the systems.

Novel optoelectronic properties of simultaneously n- and p-doped silicon nanostructures / F., Iori; Degoli, Elena; M., Palummo; Ossicini, Stefano. - In: SUPERLATTICES AND MICROSTRUCTURES. - ISSN 0749-6036. - STAMPA. - 44:4-5(2008), pp. 337-347. [10.1016/j.spmi.2007.09.002]

Novel optoelectronic properties of simultaneously n- and p-doped silicon nanostructures

DEGOLI, Elena;OSSICINI, Stefano
2008

Abstract

Doping control at the nanoscale can be used to modify optical and electronic properties thus inducing interesting effects that cannot be observed in pure systems. For instance, it has been shownthat luminescence energies in silicon nanocrystals can be tuned by properly controlling the impurities, for example by boron (B) and phosphorus (P) codoping. Starting from hydrogen-terminated silicon nanoclusters, we have previously calculated from first-principles that codoping results are always energetically favored with respect to single B- or P-doping and that the two impurities tend to occupy nearest neighbor sites near the surface. The codoped Si nanoclusters present band-edge states localizedon the impurities which are responsible for the red-shift of the absorption thresholds with respect to that of pure undoped Si nanoclusters. Here we investigate how the properties of the codoped nanoclusters are influenced by adding one or two more impurities. Moreover we study also the effect of B- and P-codopingon the electronic and optical properties of Si nanowires, thus investigating the role of dimensionality, 0-versus 1-dimensionality, of the systems.
2008
44
4-5
337
347
Novel optoelectronic properties of simultaneously n- and p-doped silicon nanostructures / F., Iori; Degoli, Elena; M., Palummo; Ossicini, Stefano. - In: SUPERLATTICES AND MICROSTRUCTURES. - ISSN 0749-6036. - STAMPA. - 44:4-5(2008), pp. 337-347. [10.1016/j.spmi.2007.09.002]
F., Iori; Degoli, Elena; M., Palummo; Ossicini, Stefano
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/613107
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 26
  • ???jsp.display-item.citation.isi??? 26
social impact