The structural properties of small silicon nanoclusters as a function of dimension and surface passivation are studied from ab initio technique. The formation energies are calculated and the relative stability of the considered clusters is predicted and discussed.
Formation energies of silicon nanocrystals: role of dimension and passivation / Degoli, Elena; Ossicini, Stefano; G., Cantele; Luppi, Eleonora; Magri, Rita; D., Ninno; Bisi, Olmes. - In: PHYSICA STATUS SOLIDI C. - ISSN 1610-1634. - STAMPA. - 2:9(2005), pp. 3354-3358. (Intervento presentato al convegno g4th International Conference on Porous Semiconductors - Science and Technology (PSST-2004) tenutosi a Cullera, SPAIN nel MAR 14-19, 2004) [10.1002/pssc.200561166].
Formation energies of silicon nanocrystals: role of dimension and passivation
DEGOLI, Elena;OSSICINI, Stefano;LUPPI, Eleonora;MAGRI, Rita;BISI, Olmes
2005
Abstract
The structural properties of small silicon nanoclusters as a function of dimension and surface passivation are studied from ab initio technique. The formation energies are calculated and the relative stability of the considered clusters is predicted and discussed.
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