Impurity doping of semiconducting nanowireshas been predicted to become increasingly inefficient as thewire diameter is reduced, because impurity states get deeperdue to quantum and dielectric confinement. We show thatefficient n- and p-type doping can be achieved in SiGe coreshellnanowires as thin as 2 nm, taking advantage of the bandoffset at the Si/Ge interface. A one-dimensional electron(hole) gas is created at the band-edge and the carrier densityis uniquely controlled by the impurity concentration with noneed of thermal activation. Additionally, SiGe core-shellnanowires provide naturally the separation between thedifferent types of carriers, electron and holes, and are ideallysuited for photovoltaic applications.
Band-offset driven efficiency of the doping of SiGe core-shell nanowires / Amato, Michele; Ossicini, Stefano; R., Rurali. - In: NANO LETTERS. - ISSN 1530-6984. - STAMPA. - 11:2(2011), pp. 594-598. [10.1021/nl103621s]
Band-offset driven efficiency of the doping of SiGe core-shell nanowires
AMATO, Michele;OSSICINI, Stefano;
2011
Abstract
Impurity doping of semiconducting nanowireshas been predicted to become increasingly inefficient as thewire diameter is reduced, because impurity states get deeperdue to quantum and dielectric confinement. We show thatefficient n- and p-type doping can be achieved in SiGe coreshellnanowires as thin as 2 nm, taking advantage of the bandoffset at the Si/Ge interface. A one-dimensional electron(hole) gas is created at the band-edge and the carrier densityis uniquely controlled by the impurity concentration with noneed of thermal activation. Additionally, SiGe core-shellnanowires provide naturally the separation between thedifferent types of carriers, electron and holes, and are ideallysuited for photovoltaic applications.Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris