OTTAVIANI, Giampiero
 Distribuzione geografica
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Continente #
NA - Nord America 8.491
EU - Europa 4.033
AS - Asia 1.062
Continente sconosciuto - Info sul continente non disponibili 8
SA - Sud America 7
OC - Oceania 6
Totale 13.607
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Nazione #
US - Stati Uniti d'America 8.418
GB - Regno Unito 2.393
SE - Svezia 473
DE - Germania 393
SG - Singapore 371
CN - Cina 339
UA - Ucraina 214
IT - Italia 202
TR - Turchia 158
HK - Hong Kong 143
FI - Finlandia 120
BG - Bulgaria 85
CA - Canada 67
FR - Francia 54
RU - Federazione Russa 14
BE - Belgio 13
CH - Svizzera 13
IE - Irlanda 12
HR - Croazia 11
NL - Olanda 11
TW - Taiwan 10
ES - Italia 8
EU - Europa 8
IN - India 8
KR - Corea 8
MX - Messico 6
BR - Brasile 5
AT - Austria 4
AU - Australia 4
ID - Indonesia 4
JP - Giappone 4
MY - Malesia 4
RO - Romania 4
VN - Vietnam 4
BY - Bielorussia 2
DK - Danimarca 2
KZ - Kazakistan 2
LT - Lituania 2
NZ - Nuova Zelanda 2
AE - Emirati Arabi Uniti 1
BD - Bangladesh 1
CL - Cile 1
CO - Colombia 1
HU - Ungheria 1
IL - Israele 1
IQ - Iraq 1
IR - Iran 1
KH - Cambogia 1
LV - Lettonia 1
PH - Filippine 1
RS - Serbia 1
Totale 13.607
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Città #
Southend 2.166
Fairfield 1.239
Woodbridge 802
Ashburn 751
Houston 657
Chandler 593
Jacksonville 514
Ann Arbor 460
Seattle 442
Santa Clara 434
Wilmington 430
Cambridge 418
Dearborn 317
Singapore 283
Nyköping 264
Hong Kong 143
San Diego 101
Des Moines 94
Beijing 90
Princeton 86
Sofia 85
Bremen 83
Izmir 81
Eugene 79
Grafing 72
Montréal 61
Modena 60
Munich 55
Helsinki 42
Mcallen 40
Philadelphia 32
Redwood City 32
New York 26
Milan 25
London 23
Auburn Hills 19
Norwalk 16
Boardman 14
Brussels 13
Nanjing 13
Dublin 12
Verona 12
Hefei 11
Jinan 10
Taipei 10
Bologna 9
Falls Church 9
Hounslow 9
Kunming 9
Shanghai 9
Kilburn 8
Los Angeles 8
Padova 8
Indiana 7
San Mateo 7
Guangzhou 6
Nanchang 5
Bolzano 4
Chiswick 4
Dong Ket 4
Madrid 4
Minneapolis 4
Prescot 4
Saint Petersburg 4
São Paulo 4
Toronto 4
Vienna 4
Bartin 3
Chavannes 3
Fossalta di Portogruaro 3
Frankfurt am Main 3
Gemona 3
Hebei 3
Jakarta 3
Lurate Caccivio 3
Moscow 3
Mountain View 3
Rome 3
Santorso 3
Southwark 3
Sydney 3
Timisoara 3
Wuhan 3
Arcade 2
Arroyomolinos 2
Assago 2
Auckland 2
Augusta 2
Bergamo 2
Chengdu 2
Chicago 2
Chongqing 2
Copenhagen 2
Duncan 2
Eindhoven 2
Fargo 2
Fuzhou 2
Groningen 2
Leawood 2
Maplewood 2
Totale 11.426
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Nome #
High figures of merit in degenerate semiconductors. Energy filtering by grain boundaries in heavily doped polycrystalline silicon 366
Evolution of defect profiles in He-implanted silicon studied by slow positrons 256
Thermal desorption spectra from cavities in helium-implanted silicon 222
Visible luminescence from silicon by hydrogen implantation and annealing treatments 222
Bandgap widening in quantum sieves 217
Helium in silicon: Thermal-desorption investigation of bubble precursors 215
A fast technique for the quantitative analysis of channeling RBS spectra 214
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 210
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 208
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 208
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 206
Transmission electron microscopy study of helium implanted silicon 206
Helium-implanted silicon: A study of bubble precursors 203
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 199
Dilute NiPt alloy interactions with Si 199
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 198
Hydrogen precipitation in highly oversaturated single-crystalline silicon 197
Hydrogen determination in Si-rich oxide thin films 196
Copper–titanium thin film interaction 196
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 196
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 195
Radiation enhanced transport of hydrogen in SiO2 195
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 191
Using evidence from nanocavities to assess the vibrational properties of external surfaces 189
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 188
DLTS and EPR study of defects in H implanted silicon 188
Processing high-quality silicon for microstrip detectors 187
Visible photoluminescence from He‐implanted silicon 187
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 186
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 185
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 185
High-dose helium-implanted single-crystal silicon: Annealing behavior 184
Infrared light emission due to radiation damage in crystalline silicon 183
Damage evolution in helium-hydrogen co-implanted (100) silicon 178
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 178
GISAXS study of structural relaxation in amorphous silicon 178
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 177
Phase formations in Co-Silicon system 176
Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors 176
Hydrogen and helium bubbles in silicon 174
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 170
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 168
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 166
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 165
X-ray reflectivity study of hydrogen implanted silicon 165
Characterization of Bioacceptable Carbon Materials 164
Transmission Electron Microscopy study of Helium Implanted Silicon 162
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 158
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 157
Electronic properties of Silicon - transition metal interface compounds 157
Porosity in low dielectric constant SiOCH films depth profiled by positron annihilation spectroscopy 157
GISAXS study of defects in He implanted silicon 157
Hydrogen injection and retention in nanocavities of single-crystalline silicon 156
Low temperature dopant activation of BF2 implanted silicon 156
EPR study of He-implanted Si 156
Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancy like defects with thermal treatments 155
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 154
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 154
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 151
ION MIXING IN SI/GE LAYERED STRUCTURES 147
A simple on-line system employed in diffraction experiments 147
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 142
SOLID-PHASE EPITAXIAL-GROWTH OF GE-SI ALLOYS MADE BY ION-IMPLANTATION 138
Visible light emission from silicon implanted and annealed SiO2 layers 134
Rutherford Backscattering Spectrometry: a technique worth introducing into pedagogy 133
Capire la Time-Resolved Reflectivity: una tecnica di analisi basata sull’interferenza da lamina sottile 132
ION-BEAM EFFECTS ON THE SURFACE AND NEAR-SURFACE COMPOSITION OF TASI2 131
Physics and Art: introducing light-matter interaction by looking at famous paintings 129
Costruire i diagrammi di fase dai dati sperimentali: una proposta didattica 124
AES Study of Room Temperature Oxygen Interaction with Near Noble Metal-Silicon Compounds Surface 122
Understand Time Resolved Reflectivity by simple experiments 115
Materials science and optics in the arts: case studies to improve physics education 114
A Problem for educational research: The updating of the curriculum 108
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium 104
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 103
Tecniche di analisi di fisica della materia e proposte didattiche dai laboratori MASEM: formare gli insegnanti al raccordo tra fisica classica e moderna 93
Process of manufacturing wafers usable in the semiconductor industry 92
Interdiffusion of thin chromium and gold films deposited on silicon 89
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics 87
Oxygen in-diffusion processes in tetragonal YBa2Cu3O7-x oxide 70
Out- and in-diffusion of oxygen in YBa2Cu3O7 - x oxide 69
ELECTRICAL STUDIES ON H-IMPLANTED SILICON 47
Composition and resistivity changes of reactively sputtered W-Si-N thin films under vacuum annealing 26
Initial reactions in Ti-Si(Mo) bilayers 16
High-resolution X-ray diffraction of silicon-on-nothing 14
PREPARATION OF LOW-NOISE HIGH-QUALITY SILICON MICROSTRIP DETECTORS 2
Thermal stability of low dielectric constant porous silica films 1
Deposition temperature determination of HDPCVD silicon dioxide films 1
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Effects of hydrogen incorporation on structural relaxation and vibrational properties of a-CN : H thin films grown by reactive sputtering 1
Initial reactions in Ti-Si bilayers: New indications from in situ measurements 1
VACANCY-HYDROGEN INTERACTION IN H-IMPLANTED SI STUDIED BY POSITRON-ANNIHILATION 1
High-temperature resistance of the YBa2Cu3O6+x tetragonal phase 1
HYDROGEN IN SILICON - STATE, REACTIVITY AND EVOLUTION AFTER ION-IMPLANTATION 1
RAPID THERMAL ANNEALING OF WSIX - INSITU RESISTANCE MEASUREMENTS 1
SNMS STUDIES OF ULSI GATE INTERCONNECTION STRUCTURES 1
KINETIC-ANALYSIS OF C49-TISI2 AND C54-TISI2 FORMATION AT RAPID THERMAL ANNEALING RATES 1
GAAS AND INP SURFACE BEHAVIOR UNDER ION-BOMBARDMENT, ALKALI DEPOSITION AND OXYGEN EXPOSURE 1
DEUTERIUM-DEUTERIUM FUSION BY AN ACTIVATED PRECURSOR 1
STUDY OF THE SP2-TO-SP3 RATIO OF DUAL-ION-BEAM SPUTTERED HYDROGENATED AMORPHOUS-CARBON FILMS 1
Totale 13.684
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Categoria #
all - tutte 53.356
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 53.356
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202.689 0 0 0 0 424 430 527 371 427 132 234 144
2020/20212.370 177 76 187 137 318 279 174 216 83 402 229 92
2021/20221.585 61 216 237 93 21 55 177 58 137 96 297 137
2022/20231.628 156 192 104 119 256 304 10 140 188 9 57 93
2023/2024813 26 59 36 163 190 41 51 117 11 19 17 83
2024/2025866 115 26 51 224 450 0 0 0 0 0 0 0
Totale 13.687