OTTAVIANI, Giampiero
 Distribuzione geografica
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Continente #
NA - Nord America 12.683
EU - Europa 5.006
AS - Asia 4.741
SA - Sud America 474
Continente sconosciuto - Info sul continente non disponibili 89
AF - Africa 86
OC - Oceania 8
Totale 23.087
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Nazione #
US - Stati Uniti d'America 12.440
GB - Regno Unito 2.613
SG - Singapore 1.521
CN - Cina 1.388
HK - Hong Kong 560
SE - Svezia 483
DE - Germania 466
VN - Vietnam 415
IT - Italia 411
BR - Brasile 364
UA - Ucraina 234
RU - Federazione Russa 192
BD - Bangladesh 183
TR - Turchia 176
FR - Francia 170
FI - Finlandia 165
KR - Corea 162
CA - Canada 140
BG - Bulgaria 88
IN - India 76
MX - Messico 46
JP - Giappone 40
AR - Argentina 38
NL - Olanda 31
ID - Indonesia 26
IQ - Iraq 26
AE - Emirati Arabi Uniti 23
PL - Polonia 22
ZA - Sudafrica 21
IE - Irlanda 19
CO - Colombia 18
PH - Filippine 18
TW - Taiwan 18
ES - Italia 17
PK - Pakistan 16
BE - Belgio 15
EC - Ecuador 15
MA - Marocco 15
MY - Malesia 15
CH - Svizzera 14
CR - Costa Rica 13
CL - Cile 12
AT - Austria 11
DZ - Algeria 11
HR - Croazia 11
KE - Kenya 9
TN - Tunisia 9
UZ - Uzbekistan 9
VE - Venezuela 9
EU - Europa 8
JM - Giamaica 8
PE - Perù 8
SA - Arabia Saudita 8
BY - Bielorussia 7
AU - Australia 6
EG - Egitto 6
HN - Honduras 6
LT - Lituania 6
TT - Trinidad e Tobago 6
AZ - Azerbaigian 5
JO - Giordania 5
LB - Libano 5
PA - Panama 5
RS - Serbia 5
BO - Bolivia 4
GT - Guatemala 4
KZ - Kazakistan 4
NI - Nicaragua 4
NP - Nepal 4
OM - Oman 4
PY - Paraguay 4
RO - Romania 4
BH - Bahrain 3
CY - Cipro 3
DK - Danimarca 3
DO - Repubblica Dominicana 3
EE - Estonia 3
GE - Georgia 3
HU - Ungheria 3
IL - Israele 3
LV - Lettonia 3
PR - Porto Rico 3
PS - Palestinian Territory 3
PT - Portogallo 3
SN - Senegal 3
TH - Thailandia 3
CI - Costa d'Avorio 2
ET - Etiopia 2
IR - Iran 2
KG - Kirghizistan 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
MN - Mongolia 2
NG - Nigeria 2
NZ - Nuova Zelanda 2
SK - Slovacchia (Repubblica Slovacca) 2
UY - Uruguay 2
AF - Afghanistan, Repubblica islamica di 1
AG - Antigua e Barbuda 1
AM - Armenia 1
Totale 22.987
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Città #
Southend 2.166
Ashburn 1.544
Fairfield 1.239
Santa Clara 1.115
Singapore 978
Woodbridge 802
Houston 672
Chandler 594
Hefei 587
Hong Kong 551
Jacksonville 519
San Jose 492
Ann Arbor 460
Seattle 449
Wilmington 434
Cambridge 418
Dearborn 317
Council Bluffs 275
Nyköping 264
Los Angeles 230
London 203
Beijing 188
The Dalles 184
Seoul 150
Buffalo 144
Ho Chi Minh City 126
Hanoi 105
San Diego 103
Des Moines 94
Munich 91
Milan 88
Sofia 87
Princeton 86
Bremen 83
Izmir 83
Eugene 79
Helsinki 77
Chicago 73
Grafing 72
Lauterbourg 71
New York 66
Modena 61
Montréal 61
Moscow 43
Mcallen 40
Philadelphia 40
Columbus 39
São Paulo 36
Redwood City 32
Salt Lake City 30
Orem 28
Shanghai 26
Washington 26
Dallas 24
Frankfurt am Main 22
Tokyo 21
Tampa 20
Auburn Hills 19
Dublin 19
Mexico City 19
Bolzano 18
Da Nang 18
Guangzhou 18
Haiphong 18
Kent 18
Montreal 17
Norwalk 16
Toronto 16
Boardman 15
Nanjing 15
Atlanta 14
Brooklyn 14
Warsaw 14
Brussels 13
Denver 13
Rome 13
San Francisco 13
Verona 13
Bologna 12
Brantford 12
Chennai 12
Miano 12
Naples 12
Belo Horizonte 11
Elk Grove Village 11
Jakarta 11
Jinan 11
Rio de Janeiro 11
Amsterdam 10
Boston 10
Miami 10
Phoenix 10
San José 10
Taipei 10
Turku 10
Brasília 9
Campinas 9
Detroit 9
Dhaka 9
Falls Church 9
Totale 17.471
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Nome #
High figures of merit in degenerate semiconductors. Energy filtering by grain boundaries in heavily doped polycrystalline silicon 483
Evolution of defect profiles in He-implanted silicon studied by slow positrons 430
Thermal desorption spectra from cavities in helium-implanted silicon 392
Helium-implanted silicon: A study of bubble precursors 379
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 350
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 346
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 345
Dilute NiPt alloy interactions with Si 339
Damage evolution in helium-hydrogen co-implanted (100) silicon 335
Copper–titanium thin film interaction 331
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 330
Hydrogen and helium bubbles in silicon 330
Transmission electron microscopy study of helium implanted silicon 325
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 324
A fast technique for the quantitative analysis of channeling RBS spectra 320
Helium in silicon: Thermal-desorption investigation of bubble precursors 320
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 319
Bandgap widening in quantum sieves 319
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 319
Hydrogen determination in Si-rich oxide thin films 315
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 313
Visible luminescence from silicon by hydrogen implantation and annealing treatments 312
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 310
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 309
High-dose helium-implanted single-crystal silicon: Annealing behavior 306
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 298
Hydrogen precipitation in highly oversaturated single-crystalline silicon 297
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 297
Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancy like defects with thermal treatments 296
DLTS and EPR study of defects in H implanted silicon 295
Electronic properties of Silicon - transition metal interface compounds 294
Porosity in low dielectric constant SiOCH films depth profiled by positron annihilation spectroscopy 285
Processing high-quality silicon for microstrip detectors 285
Infrared light emission due to radiation damage in crystalline silicon 284
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 283
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 283
Visible photoluminescence from He‐implanted silicon 283
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 282
Phase formations in Co-Silicon system 280
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 280
Transmission Electron Microscopy study of Helium Implanted Silicon 277
Visible light emission from silicon implanted and annealed SiO2 layers 275
AES Study of Room Temperature Oxygen Interaction with Near Noble Metal-Silicon Compounds Surface 274
Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors 274
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 273
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 272
Low temperature dopant activation of BF2 implanted silicon 271
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 271
Radiation enhanced transport of hydrogen in SiO2 270
Using evidence from nanocavities to assess the vibrational properties of external surfaces 270
GISAXS study of structural relaxation in amorphous silicon 265
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 264
X-ray reflectivity study of hydrogen implanted silicon 258
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 256
Hydrogen injection and retention in nanocavities of single-crystalline silicon 255
Characterization of Bioacceptable Carbon Materials 255
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 254
Costruire i diagrammi di fase dai dati sperimentali: una proposta didattica 250
Physics and Art: introducing light-matter interaction by looking at famous paintings 247
Capire la Time-Resolved Reflectivity: una tecnica di analisi basata sull’interferenza da lamina sottile 246
GISAXS study of defects in He implanted silicon 246
ION-BEAM EFFECTS ON THE SURFACE AND NEAR-SURFACE COMPOSITION OF TASI2 245
ION MIXING IN SI/GE LAYERED STRUCTURES 245
ELECTRICAL STUDIES ON H-IMPLANTED SILICON 244
A simple on-line system employed in diffraction experiments 243
Rutherford Backscattering Spectrometry: a technique worth introducing into pedagogy 237
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 237
EPR study of He-implanted Si 237
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 232
SOLID-PHASE EPITAXIAL-GROWTH OF GE-SI ALLOYS MADE BY ION-IMPLANTATION 228
Composition and resistivity changes of reactively sputtered W-Si-N thin films under vacuum annealing 216
A Problem for educational research: The updating of the curriculum 214
Understand Time Resolved Reflectivity by simple experiments 211
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 209
Interdiffusion of thin chromium and gold films deposited on silicon 197
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium 193
Materials science and optics in the arts: case studies to improve physics education 181
Tecniche di analisi di fisica della materia e proposte didattiche dai laboratori MASEM: formare gli insegnanti al raccordo tra fisica classica e moderna 177
Process of manufacturing wafers usable in the semiconductor industry 170
Oxygen in-diffusion processes in tetragonal YBa2Cu3O7-x oxide 163
Out- and in-diffusion of oxygen in YBa2Cu3O7 - x oxide 160
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 148
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics 146
High-resolution X-ray diffraction of silicon-on-nothing 109
Initial reactions in Ti-Si(Mo) bilayers 80
PREPARATION OF LOW-NOISE HIGH-QUALITY SILICON MICROSTRIP DETECTORS 2
Thermal stability of low dielectric constant porous silica films 1
Deposition temperature determination of HDPCVD silicon dioxide films 1
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Effects of hydrogen incorporation on structural relaxation and vibrational properties of a-CN : H thin films grown by reactive sputtering 1
Initial reactions in Ti-Si bilayers: New indications from in situ measurements 1
VACANCY-HYDROGEN INTERACTION IN H-IMPLANTED SI STUDIED BY POSITRON-ANNIHILATION 1
High-temperature resistance of the YBa2Cu3O6+x tetragonal phase 1
HYDROGEN IN SILICON - STATE, REACTIVITY AND EVOLUTION AFTER ION-IMPLANTATION 1
RAPID THERMAL ANNEALING OF WSIX - INSITU RESISTANCE MEASUREMENTS 1
SNMS STUDIES OF ULSI GATE INTERCONNECTION STRUCTURES 1
KINETIC-ANALYSIS OF C49-TISI2 AND C54-TISI2 FORMATION AT RAPID THERMAL ANNEALING RATES 1
GAAS AND INP SURFACE BEHAVIOR UNDER ION-BOMBARDMENT, ALKALI DEPOSITION AND OXYGEN EXPOSURE 1
DEUTERIUM-DEUTERIUM FUSION BY AN ACTIVATED PRECURSOR 1
STUDY OF THE SP2-TO-SP3 RATIO OF DUAL-ION-BEAM SPUTTERED HYDROGENATED AMORPHOUS-CARBON FILMS 1
Totale 23.084
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Categoria #
all - tutte 86.996
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 86.996
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.308 0 0 237 93 21 55 177 58 137 96 297 137
2022/20231.628 156 192 104 119 256 304 10 140 188 9 57 93
2023/2024813 26 59 36 163 190 41 51 117 11 19 17 83
2024/20253.408 115 26 51 224 679 502 199 252 331 136 433 460
2025/20265.955 340 308 691 516 702 533 729 321 629 522 363 301
2026/2027903 178 376 349 0 0 0 0 0 0 0 0 0
Totale 23.087