OTTAVIANI, Giampiero
 Distribuzione geografica
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Continente #
NA - Nord America 11.626
EU - Europa 4.902
AS - Asia 4.565
SA - Sud America 461
AF - Africa 86
Continente sconosciuto - Info sul continente non disponibili 9
OC - Oceania 8
Totale 21.657
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Nazione #
US - Stati Uniti d'America 11.447
GB - Regno Unito 2.610
SG - Singapore 1.509
CN - Cina 1.361
HK - Hong Kong 554
SE - Svezia 482
DE - Germania 466
VN - Vietnam 413
BR - Brasile 358
IT - Italia 321
UA - Ucraina 234
RU - Federazione Russa 192
TR - Turchia 176
FI - Finlandia 165
FR - Francia 164
KR - Corea 162
CA - Canada 114
BG - Bulgaria 88
IN - India 76
BD - Bangladesh 63
MX - Messico 41
JP - Giappone 38
AR - Argentina 35
NL - Olanda 30
ID - Indonesia 26
IQ - Iraq 25
AE - Emirati Arabi Uniti 23
PL - Polonia 21
ZA - Sudafrica 21
IE - Irlanda 19
PH - Filippine 17
CO - Colombia 16
ES - Italia 16
BE - Belgio 15
MA - Marocco 15
MY - Malesia 15
PK - Pakistan 15
CH - Svizzera 14
EC - Ecuador 14
TW - Taiwan 14
AT - Austria 11
CL - Cile 11
DZ - Algeria 11
HR - Croazia 11
KE - Kenya 9
TN - Tunisia 9
UZ - Uzbekistan 9
VE - Venezuela 9
EU - Europa 8
PE - Perù 8
SA - Arabia Saudita 8
BY - Bielorussia 7
AU - Australia 6
EG - Egitto 6
LT - Lituania 6
AZ - Azerbaigian 5
JM - Giamaica 5
JO - Giordania 5
LB - Libano 5
PA - Panama 5
RS - Serbia 5
BO - Bolivia 4
KZ - Kazakistan 4
NP - Nepal 4
OM - Oman 4
PY - Paraguay 4
RO - Romania 4
BH - Bahrain 3
CY - Cipro 3
DK - Danimarca 3
DO - Repubblica Dominicana 3
EE - Estonia 3
GE - Georgia 3
HU - Ungheria 3
IL - Israele 3
LV - Lettonia 3
PS - Palestinian Territory 3
SN - Senegal 3
TH - Thailandia 3
CI - Costa d'Avorio 2
ET - Etiopia 2
GT - Guatemala 2
HN - Honduras 2
IR - Iran 2
KG - Kirghizistan 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
MN - Mongolia 2
NG - Nigeria 2
NZ - Nuova Zelanda 2
PT - Portogallo 2
SK - Slovacchia (Repubblica Slovacca) 2
TT - Trinidad e Tobago 2
UY - Uruguay 2
AF - Afghanistan, Repubblica islamica di 1
AG - Antigua e Barbuda 1
AM - Armenia 1
AO - Angola 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
Totale 21.640
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Città #
Southend 2.166
Fairfield 1.239
Ashburn 1.224
Santa Clara 1.064
Singapore 973
Woodbridge 802
Houston 670
Chandler 593
Hefei 587
Hong Kong 545
Jacksonville 518
Ann Arbor 460
Seattle 446
Wilmington 433
Cambridge 418
San Jose 366
Dearborn 317
Nyköping 264
Los Angeles 212
London 203
The Dalles 184
Beijing 178
Seoul 150
Buffalo 135
Ho Chi Minh City 125
Council Bluffs 117
Hanoi 105
San Diego 102
Des Moines 94
Munich 91
Sofia 87
Princeton 86
Bremen 83
Izmir 83
Eugene 79
Helsinki 77
Grafing 72
Lauterbourg 71
Milan 71
Chicago 69
Modena 61
Montréal 61
New York 61
Moscow 43
Mcallen 40
Philadelphia 38
São Paulo 35
Redwood City 32
Columbus 29
Salt Lake City 29
Orem 28
Washington 26
Shanghai 24
Frankfurt am Main 22
Auburn Hills 19
Dallas 19
Tokyo 19
Da Nang 18
Dublin 18
Guangzhou 18
Haiphong 18
Kent 18
Tampa 18
Mexico City 16
Norwalk 16
Nanjing 15
Atlanta 14
Boardman 14
Montreal 14
Brooklyn 13
Brussels 13
Verona 13
Warsaw 13
Brantford 12
Chennai 12
Toronto 12
Belo Horizonte 11
Denver 11
Elk Grove Village 11
Jakarta 11
Jinan 11
San Francisco 11
Amsterdam 10
Bologna 10
Boston 10
Miano 10
Rio de Janeiro 10
Taipei 10
Turku 10
Brasília 9
Campinas 9
Dhaka 9
Falls Church 9
Hounslow 9
Kunming 9
Rome 9
Baghdad 8
Dubai 8
Kilburn 8
Miami 8
Totale 16.661
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Nome #
High figures of merit in degenerate semiconductors. Energy filtering by grain boundaries in heavily doped polycrystalline silicon 448
Evolution of defect profiles in He-implanted silicon studied by slow positrons 413
Thermal desorption spectra from cavities in helium-implanted silicon 371
Helium-implanted silicon: A study of bubble precursors 360
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 334
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 333
Dilute NiPt alloy interactions with Si 325
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 323
Damage evolution in helium-hydrogen co-implanted (100) silicon 320
Transmission electron microscopy study of helium implanted silicon 317
Hydrogen and helium bubbles in silicon 316
Copper–titanium thin film interaction 313
Bandgap widening in quantum sieves 312
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 309
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 308
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 307
A fast technique for the quantitative analysis of channeling RBS spectra 304
Visible luminescence from silicon by hydrogen implantation and annealing treatments 304
Helium in silicon: Thermal-desorption investigation of bubble precursors 301
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 300
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 299
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 299
Hydrogen determination in Si-rich oxide thin films 296
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 295
Hydrogen precipitation in highly oversaturated single-crystalline silicon 289
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 288
High-dose helium-implanted single-crystal silicon: Annealing behavior 284
DLTS and EPR study of defects in H implanted silicon 284
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 284
Electronic properties of Silicon - transition metal interface compounds 280
Processing high-quality silicon for microstrip detectors 277
Infrared light emission due to radiation damage in crystalline silicon 276
Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancy like defects with thermal treatments 272
Transmission Electron Microscopy study of Helium Implanted Silicon 272
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 272
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 271
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 269
Visible photoluminescence from He‐implanted silicon 265
Phase formations in Co-Silicon system 264
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 263
Radiation enhanced transport of hydrogen in SiO2 262
Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors 261
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 260
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 260
Visible light emission from silicon implanted and annealed SiO2 layers 258
Porosity in low dielectric constant SiOCH films depth profiled by positron annihilation spectroscopy 258
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 257
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 256
GISAXS study of structural relaxation in amorphous silicon 256
Using evidence from nanocavities to assess the vibrational properties of external surfaces 253
AES Study of Room Temperature Oxygen Interaction with Near Noble Metal-Silicon Compounds Surface 249
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 246
Characterization of Bioacceptable Carbon Materials 246
Hydrogen injection and retention in nanocavities of single-crystalline silicon 245
Low temperature dopant activation of BF2 implanted silicon 245
X-ray reflectivity study of hydrogen implanted silicon 239
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 238
Capire la Time-Resolved Reflectivity: una tecnica di analisi basata sull’interferenza da lamina sottile 234
ION MIXING IN SI/GE LAYERED STRUCTURES 230
A simple on-line system employed in diffraction experiments 225
ION-BEAM EFFECTS ON THE SURFACE AND NEAR-SURFACE COMPOSITION OF TASI2 224
Rutherford Backscattering Spectrometry: a technique worth introducing into pedagogy 224
Costruire i diagrammi di fase dai dati sperimentali: una proposta didattica 223
EPR study of He-implanted Si 222
GISAXS study of defects in He implanted silicon 221
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 220
Physics and Art: introducing light-matter interaction by looking at famous paintings 219
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 219
SOLID-PHASE EPITAXIAL-GROWTH OF GE-SI ALLOYS MADE BY ION-IMPLANTATION 213
A Problem for educational research: The updating of the curriculum 204
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 201
Composition and resistivity changes of reactively sputtered W-Si-N thin films under vacuum annealing 191
Understand Time Resolved Reflectivity by simple experiments 184
Interdiffusion of thin chromium and gold films deposited on silicon 183
ELECTRICAL STUDIES ON H-IMPLANTED SILICON 178
Materials science and optics in the arts: case studies to improve physics education 174
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium 166
Tecniche di analisi di fisica della materia e proposte didattiche dai laboratori MASEM: formare gli insegnanti al raccordo tra fisica classica e moderna 165
Process of manufacturing wafers usable in the semiconductor industry 153
Out- and in-diffusion of oxygen in YBa2Cu3O7 - x oxide 152
Oxygen in-diffusion processes in tetragonal YBa2Cu3O7-x oxide 150
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 142
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics 136
High-resolution X-ray diffraction of silicon-on-nothing 95
Initial reactions in Ti-Si(Mo) bilayers 64
PREPARATION OF LOW-NOISE HIGH-QUALITY SILICON MICROSTRIP DETECTORS 2
Thermal stability of low dielectric constant porous silica films 1
Deposition temperature determination of HDPCVD silicon dioxide films 1
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Effects of hydrogen incorporation on structural relaxation and vibrational properties of a-CN : H thin films grown by reactive sputtering 1
Initial reactions in Ti-Si bilayers: New indications from in situ measurements 1
VACANCY-HYDROGEN INTERACTION IN H-IMPLANTED SI STUDIED BY POSITRON-ANNIHILATION 1
High-temperature resistance of the YBa2Cu3O6+x tetragonal phase 1
HYDROGEN IN SILICON - STATE, REACTIVITY AND EVOLUTION AFTER ION-IMPLANTATION 1
RAPID THERMAL ANNEALING OF WSIX - INSITU RESISTANCE MEASUREMENTS 1
SNMS STUDIES OF ULSI GATE INTERCONNECTION STRUCTURES 1
KINETIC-ANALYSIS OF C49-TISI2 AND C54-TISI2 FORMATION AT RAPID THERMAL ANNEALING RATES 1
GAAS AND INP SURFACE BEHAVIOR UNDER ION-BOMBARDMENT, ALKALI DEPOSITION AND OXYGEN EXPOSURE 1
DEUTERIUM-DEUTERIUM FUSION BY AN ACTIVATED PRECURSOR 1
STUDY OF THE SP2-TO-SP3 RATIO OF DUAL-ION-BEAM SPUTTERED HYDROGENATED AMORPHOUS-CARBON FILMS 1
Totale 21.734
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Categoria #
all - tutte 79.479
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 79.479
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021321 0 0 0 0 0 0 0 0 0 0 229 92
2021/20221.585 61 216 237 93 21 55 177 58 137 96 297 137
2022/20231.628 156 192 104 119 256 304 10 140 188 9 57 93
2023/2024813 26 59 36 163 190 41 51 117 11 19 17 83
2024/20253.408 115 26 51 224 679 502 199 252 331 136 433 460
2025/20265.508 340 308 691 516 702 533 729 321 629 522 217 0
Totale 21.737