OTTAVIANI, Giampiero
 Distribuzione geografica
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Continente #
NA - Nord America 9.418
EU - Europa 4.485
AS - Asia 2.144
SA - Sud America 209
AF - Africa 14
Continente sconosciuto - Info sul continente non disponibili 8
OC - Oceania 6
Totale 16.284
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Nazione #
US - Stati Uniti d'America 9.327
GB - Regno Unito 2.574
SG - Singapore 727
CN - Cina 627
SE - Svezia 475
HK - Hong Kong 459
DE - Germania 434
IT - Italia 216
UA - Ucraina 216
BR - Brasile 186
RU - Federazione Russa 185
TR - Turchia 159
FI - Finlandia 132
BG - Bulgaria 87
CA - Canada 74
KR - Corea 55
FR - Francia 54
VN - Vietnam 28
NL - Olanda 19
BE - Belgio 15
BD - Bangladesh 14
IE - Irlanda 14
IN - India 14
CH - Svizzera 13
AR - Argentina 12
HR - Croazia 11
MX - Messico 10
TW - Taiwan 10
ES - Italia 9
AT - Austria 8
EU - Europa 8
JP - Giappone 7
ID - Indonesia 6
IQ - Iraq 5
MA - Marocco 5
PL - Polonia 5
AU - Australia 4
MY - Malesia 4
RO - Romania 4
AE - Emirati Arabi Uniti 3
BY - Bielorussia 3
KZ - Kazakistan 3
UZ - Uzbekistan 3
BO - Bolivia 2
CL - Cile 2
CO - Colombia 2
DK - Danimarca 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
EC - Ecuador 2
GE - Georgia 2
IL - Israele 2
JM - Giamaica 2
KE - Kenya 2
KG - Kirghizistan 2
LA - Repubblica Popolare Democratica del Laos 2
LT - Lituania 2
LV - Lettonia 2
NZ - Nuova Zelanda 2
PA - Panama 2
PE - Perù 2
PK - Pakistan 2
SA - Arabia Saudita 2
SN - Senegal 2
ZA - Sudafrica 2
AM - Armenia 1
EE - Estonia 1
EG - Egitto 1
HU - Ungheria 1
IR - Iran 1
JO - Giordania 1
KH - Cambogia 1
LB - Libano 1
NP - Nepal 1
PH - Filippine 1
PS - Palestinian Territory 1
PT - Portogallo 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
TT - Trinidad e Tobago 1
VE - Venezuela 1
Totale 16.284
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Città #
Southend 2.166
Fairfield 1.239
Santa Clara 1.029
Woodbridge 802
Ashburn 754
Houston 658
Chandler 593
Jacksonville 514
Ann Arbor 460
Hong Kong 455
Seattle 442
Singapore 431
Wilmington 430
Cambridge 418
Dearborn 317
Nyköping 264
London 198
Hefei 179
Beijing 106
San Diego 102
Council Bluffs 100
Des Moines 94
Munich 91
Sofia 87
Princeton 86
Bremen 83
Izmir 81
Eugene 79
Grafing 72
Modena 61
Montréal 61
Seoul 47
Helsinki 44
Moscow 42
Mcallen 40
Philadelphia 32
Redwood City 32
New York 30
Columbus 29
Milan 27
The Dalles 26
Los Angeles 22
Shanghai 22
Auburn Hills 19
Norwalk 16
São Paulo 16
Boardman 14
Dublin 14
Nanjing 14
Brussels 13
Verona 12
Guangzhou 11
Jinan 10
Taipei 10
Turku 10
Bologna 9
Falls Church 9
Hounslow 9
Kunming 9
Hanoi 8
Kilburn 8
Padova 8
Indiana 7
San Francisco 7
San Mateo 7
Campinas 6
Chengdu 6
Ho Chi Minh City 6
Vienna 6
Xiamen 6
Belo Horizonte 5
Boston 5
Brooklyn 5
Jakarta 5
Nanchang 5
Rio de Janeiro 5
Toronto 5
Warsaw 5
Bolzano 4
Chicago 4
Chiswick 4
Dong Ket 4
Frankfurt am Main 4
Madrid 4
Minneapolis 4
Naples 4
Prescot 4
Saint Petersburg 4
Shaoxing 4
Zhengzhou 4
Augusta 3
Bartin 3
Brasília 3
Chavannes 3
Chongqing 3
Dhaka 3
Florianópolis 3
Fossalta di Portogruaro 3
Gemona 3
Haikou 3
Totale 13.233
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Nome #
High figures of merit in degenerate semiconductors. Energy filtering by grain boundaries in heavily doped polycrystalline silicon 394
Evolution of defect profiles in He-implanted silicon studied by slow positrons 296
Thermal desorption spectra from cavities in helium-implanted silicon 259
Visible luminescence from silicon by hydrogen implantation and annealing treatments 256
Bandgap widening in quantum sieves 251
Transmission electron microscopy study of helium implanted silicon 249
Helium-implanted silicon: A study of bubble precursors 247
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 247
Helium in silicon: Thermal-desorption investigation of bubble precursors 246
A fast technique for the quantitative analysis of channeling RBS spectra 242
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 240
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 240
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 235
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 233
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 230
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 229
Dilute NiPt alloy interactions with Si 229
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 228
Copper–titanium thin film interaction 226
Hydrogen determination in Si-rich oxide thin films 224
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 224
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 224
Hydrogen precipitation in highly oversaturated single-crystalline silicon 224
DLTS and EPR study of defects in H implanted silicon 223
Processing high-quality silicon for microstrip detectors 222
High-dose helium-implanted single-crystal silicon: Annealing behavior 221
Damage evolution in helium-hydrogen co-implanted (100) silicon 219
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 218
Using evidence from nanocavities to assess the vibrational properties of external surfaces 217
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 216
Radiation enhanced transport of hydrogen in SiO2 216
Visible photoluminescence from He‐implanted silicon 216
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 215
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 214
Hydrogen and helium bubbles in silicon 213
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 211
Infrared light emission due to radiation damage in crystalline silicon 210
Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors 208
Phase formations in Co-Silicon system 204
GISAXS study of structural relaxation in amorphous silicon 204
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 199
Characterization of Bioacceptable Carbon Materials 199
Transmission Electron Microscopy study of Helium Implanted Silicon 197
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 196
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 196
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 195
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 194
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 194
Electronic properties of Silicon - transition metal interface compounds 192
Porosity in low dielectric constant SiOCH films depth profiled by positron annihilation spectroscopy 192
Hydrogen injection and retention in nanocavities of single-crystalline silicon 192
X-ray reflectivity study of hydrogen implanted silicon 192
Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancy like defects with thermal treatments 189
Low temperature dopant activation of BF2 implanted silicon 186
GISAXS study of defects in He implanted silicon 185
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 182
EPR study of He-implanted Si 181
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 177
A simple on-line system employed in diffraction experiments 177
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 176
ION MIXING IN SI/GE LAYERED STRUCTURES 174
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 173
Visible light emission from silicon implanted and annealed SiO2 layers 172
SOLID-PHASE EPITAXIAL-GROWTH OF GE-SI ALLOYS MADE BY ION-IMPLANTATION 168
Rutherford Backscattering Spectrometry: a technique worth introducing into pedagogy 168
Capire la Time-Resolved Reflectivity: una tecnica di analisi basata sull’interferenza da lamina sottile 164
AES Study of Room Temperature Oxygen Interaction with Near Noble Metal-Silicon Compounds Surface 164
Physics and Art: introducing light-matter interaction by looking at famous paintings 160
Costruire i diagrammi di fase dai dati sperimentali: una proposta didattica 158
ION-BEAM EFFECTS ON THE SURFACE AND NEAR-SURFACE COMPOSITION OF TASI2 157
Understand Time Resolved Reflectivity by simple experiments 144
A Problem for educational research: The updating of the curriculum 141
Materials science and optics in the arts: case studies to improve physics education 140
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 124
Tecniche di analisi di fisica della materia e proposte didattiche dai laboratori MASEM: formare gli insegnanti al raccordo tra fisica classica e moderna 123
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium 123
Interdiffusion of thin chromium and gold films deposited on silicon 116
Process of manufacturing wafers usable in the semiconductor industry 114
Oxygen in-diffusion processes in tetragonal YBa2Cu3O7-x oxide 111
Out- and in-diffusion of oxygen in YBa2Cu3O7 - x oxide 110
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics 107
ELECTRICAL STUDIES ON H-IMPLANTED SILICON 83
Composition and resistivity changes of reactively sputtered W-Si-N thin films under vacuum annealing 74
High-resolution X-ray diffraction of silicon-on-nothing 37
Initial reactions in Ti-Si(Mo) bilayers 29
PREPARATION OF LOW-NOISE HIGH-QUALITY SILICON MICROSTRIP DETECTORS 2
Thermal stability of low dielectric constant porous silica films 1
Deposition temperature determination of HDPCVD silicon dioxide films 1
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Effects of hydrogen incorporation on structural relaxation and vibrational properties of a-CN : H thin films grown by reactive sputtering 1
Initial reactions in Ti-Si bilayers: New indications from in situ measurements 1
VACANCY-HYDROGEN INTERACTION IN H-IMPLANTED SI STUDIED BY POSITRON-ANNIHILATION 1
High-temperature resistance of the YBa2Cu3O6+x tetragonal phase 1
HYDROGEN IN SILICON - STATE, REACTIVITY AND EVOLUTION AFTER ION-IMPLANTATION 1
RAPID THERMAL ANNEALING OF WSIX - INSITU RESISTANCE MEASUREMENTS 1
SNMS STUDIES OF ULSI GATE INTERCONNECTION STRUCTURES 1
KINETIC-ANALYSIS OF C49-TISI2 AND C54-TISI2 FORMATION AT RAPID THERMAL ANNEALING RATES 1
GAAS AND INP SURFACE BEHAVIOR UNDER ION-BOMBARDMENT, ALKALI DEPOSITION AND OXYGEN EXPOSURE 1
DEUTERIUM-DEUTERIUM FUSION BY AN ACTIVATED PRECURSOR 1
STUDY OF THE SP2-TO-SP3 RATIO OF DUAL-ION-BEAM SPUTTERED HYDROGENATED AMORPHOUS-CARBON FILMS 1
Totale 16.361
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Categoria #
all - tutte 63.928
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 63.928
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20212.370 177 76 187 137 318 279 174 216 83 402 229 92
2021/20221.585 61 216 237 93 21 55 177 58 137 96 297 137
2022/20231.628 156 192 104 119 256 304 10 140 188 9 57 93
2023/2024813 26 59 36 163 190 41 51 117 11 19 17 83
2024/20253.408 115 26 51 224 679 502 199 252 331 136 433 460
2025/2026135 135 0 0 0 0 0 0 0 0 0 0 0
Totale 16.364