OTTAVIANI, Giampiero
 Distribuzione geografica
Continente #
NA - Nord America 7.992
EU - Europa 4.004
AS - Asia 613
Continente sconosciuto - Info sul continente non disponibili 8
SA - Sud America 7
OC - Oceania 5
Totale 12.629
Nazione #
US - Stati Uniti d'America 7.919
GB - Regno Unito 2.392
SE - Svezia 473
DE - Germania 391
CN - Cina 224
UA - Ucraina 214
IT - Italia 186
TR - Turchia 158
HK - Hong Kong 143
FI - Finlandia 118
BG - Bulgaria 85
CA - Canada 67
FR - Francia 54
SG - Singapore 39
BE - Belgio 13
RU - Federazione Russa 13
IE - Irlanda 12
CH - Svizzera 11
HR - Croazia 11
TW - Taiwan 10
NL - Olanda 9
ES - Italia 8
EU - Europa 8
IN - India 8
KR - Corea 8
MX - Messico 6
BR - Brasile 5
AT - Austria 4
AU - Australia 4
JP - Giappone 4
MY - Malesia 4
RO - Romania 4
VN - Vietnam 4
BY - Bielorussia 2
ID - Indonesia 2
KZ - Kazakistan 2
AE - Emirati Arabi Uniti 1
BD - Bangladesh 1
CL - Cile 1
CO - Colombia 1
DK - Danimarca 1
HU - Ungheria 1
IL - Israele 1
IQ - Iraq 1
IR - Iran 1
KH - Cambogia 1
LV - Lettonia 1
NZ - Nuova Zelanda 1
PH - Filippine 1
RS - Serbia 1
Totale 12.629
Città #
Southend 2.166
Fairfield 1.239
Woodbridge 802
Ashburn 728
Houston 657
Chandler 593
Jacksonville 514
Ann Arbor 460
Seattle 442
Wilmington 430
Cambridge 418
Dearborn 317
Nyköping 264
Hong Kong 143
San Diego 101
Des Moines 94
Princeton 86
Beijing 85
Sofia 85
Bremen 83
Izmir 81
Eugene 79
Grafing 72
Montréal 61
Modena 59
Munich 54
Helsinki 40
Mcallen 40
Philadelphia 32
Redwood City 32
New York 26
Milan 24
London 22
Auburn Hills 19
Norwalk 16
Boardman 14
Brussels 13
Nanjing 13
Dublin 12
Verona 12
Hefei 11
Jinan 10
Taipei 10
Bologna 9
Falls Church 9
Hounslow 9
Kunming 9
Kilburn 8
Padova 8
Indiana 7
San Mateo 7
Los Angeles 6
Nanchang 5
Bolzano 4
Chiswick 4
Dong Ket 4
Madrid 4
Minneapolis 4
Prescot 4
Saint Petersburg 4
São Paulo 4
Toronto 4
Vienna 4
Bartin 3
Chavannes 3
Gemona 3
Hebei 3
Lurate Caccivio 3
Mountain View 3
Rome 3
Santorso 3
Shanghai 3
Southwark 3
Sydney 3
Timisoara 3
Arcade 2
Arroyomolinos 2
Augusta 2
Bergamo 2
Chengdu 2
Chicago 2
Duncan 2
Fargo 2
Frankfurt am Main 2
Fuzhou 2
Groningen 2
Guangzhou 2
Leawood 2
Maplewood 2
Mexico 2
Minsk 2
Moscow 2
Paris 2
Pavlodar 2
Pozzallo 2
Pune 2
Saint Louis 2
San Felice A Cancello 2
San Francisco 2
Shaoxing 2
Totale 10.662
Nome #
High figures of merit in degenerate semiconductors. Energy filtering by grain boundaries in heavily doped polycrystalline silicon 355
Evolution of defect profiles in He-implanted silicon studied by slow positrons 243
Visible luminescence from silicon by hydrogen implantation and annealing treatments 211
Thermal desorption spectra from cavities in helium-implanted silicon 209
Bandgap widening in quantum sieves 205
A fast technique for the quantitative analysis of channeling RBS spectra 203
Helium in silicon: Thermal-desorption investigation of bubble precursors 203
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 199
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 198
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 198
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 194
Transmission electron microscopy study of helium implanted silicon 193
Helium-implanted silicon: A study of bubble precursors 192
Hydrogen precipitation in highly oversaturated single-crystalline silicon 188
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 187
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 187
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 186
Dilute NiPt alloy interactions with Si 186
Copper–titanium thin film interaction 185
Radiation enhanced transport of hydrogen in SiO2 185
Hydrogen determination in Si-rich oxide thin films 183
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 183
Using evidence from nanocavities to assess the vibrational properties of external surfaces 181
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 179
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 177
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 177
DLTS and EPR study of defects in H implanted silicon 176
Infrared light emission due to radiation damage in crystalline silicon 175
Processing high-quality silicon for microstrip detectors 175
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 174
Visible photoluminescence from He‐implanted silicon 174
High-dose helium-implanted single-crystal silicon: Annealing behavior 173
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 171
GISAXS study of structural relaxation in amorphous silicon 169
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 168
Damage evolution in helium-hydrogen co-implanted (100) silicon 166
Phase formations in Co-Silicon system 165
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 165
Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors 165
Hydrogen and helium bubbles in silicon 161
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 160
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 157
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 154
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 154
X-ray reflectivity study of hydrogen implanted silicon 153
Transmission Electron Microscopy study of Helium Implanted Silicon 152
Characterization of Bioacceptable Carbon Materials 152
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 147
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 147
Low temperature dopant activation of BF2 implanted silicon 147
Electronic properties of Silicon - transition metal interface compounds 146
Hydrogen injection and retention in nanocavities of single-crystalline silicon 146
GISAXS study of defects in He implanted silicon 146
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 144
EPR study of He-implanted Si 144
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 143
Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancy like defects with thermal treatments 143
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 142
Porosity in low dielectric constant SiOCH films depth profiled by positron annihilation spectroscopy 140
ION MIXING IN SI/GE LAYERED STRUCTURES 138
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 133
SOLID-PHASE EPITAXIAL-GROWTH OF GE-SI ALLOYS MADE BY ION-IMPLANTATION 129
A simple on-line system employed in diffraction experiments 128
ION-BEAM EFFECTS ON THE SURFACE AND NEAR-SURFACE COMPOSITION OF TASI2 123
Rutherford Backscattering Spectrometry: a technique worth introducing into pedagogy 121
Visible light emission from silicon implanted and annealed SiO2 layers 116
Capire la Time-Resolved Reflectivity: una tecnica di analisi basata sull’interferenza da lamina sottile 115
AES Study of Room Temperature Oxygen Interaction with Near Noble Metal-Silicon Compounds Surface 109
Costruire i diagrammi di fase dai dati sperimentali: una proposta didattica 108
Physics and Art: introducing light-matter interaction by looking at famous paintings 106
Understand Time Resolved Reflectivity by simple experiments 102
Materials science and optics in the arts: case studies to improve physics education 100
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium 95
A Problem for educational research: The updating of the curriculum 94
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 93
Process of manufacturing wafers usable in the semiconductor industry 84
Tecniche di analisi di fisica della materia e proposte didattiche dai laboratori MASEM: formare gli insegnanti al raccordo tra fisica classica e moderna 83
Interdiffusion of thin chromium and gold films deposited on silicon 79
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics 79
Oxygen in-diffusion processes in tetragonal YBa2Cu3O7-x oxide 60
Out- and in-diffusion of oxygen in YBa2Cu3O7 - x oxide 57
ELECTRICAL STUDIES ON H-IMPLANTED SILICON 33
Composition and resistivity changes of reactively sputtered W-Si-N thin films under vacuum annealing 11
Initial reactions in Ti-Si(Mo) bilayers 8
High-resolution X-ray diffraction of silicon-on-nothing 6
PREPARATION OF LOW-NOISE HIGH-QUALITY SILICON MICROSTRIP DETECTORS 2
Thermal stability of low dielectric constant porous silica films 1
Deposition temperature determination of HDPCVD silicon dioxide films 1
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Effects of hydrogen incorporation on structural relaxation and vibrational properties of a-CN : H thin films grown by reactive sputtering 1
Initial reactions in Ti-Si bilayers: New indications from in situ measurements 1
VACANCY-HYDROGEN INTERACTION IN H-IMPLANTED SI STUDIED BY POSITRON-ANNIHILATION 1
High-temperature resistance of the YBa2Cu3O6+x tetragonal phase 1
HYDROGEN IN SILICON - STATE, REACTIVITY AND EVOLUTION AFTER ION-IMPLANTATION 1
RAPID THERMAL ANNEALING OF WSIX - INSITU RESISTANCE MEASUREMENTS 1
SNMS STUDIES OF ULSI GATE INTERCONNECTION STRUCTURES 1
KINETIC-ANALYSIS OF C49-TISI2 AND C54-TISI2 FORMATION AT RAPID THERMAL ANNEALING RATES 1
GAAS AND INP SURFACE BEHAVIOR UNDER ION-BOMBARDMENT, ALKALI DEPOSITION AND OXYGEN EXPOSURE 1
DEUTERIUM-DEUTERIUM FUSION BY AN ACTIVATED PRECURSOR 1
STUDY OF THE SP2-TO-SP3 RATIO OF DUAL-ION-BEAM SPUTTERED HYDROGENATED AMORPHOUS-CARBON FILMS 1
Totale 12.707
Categoria #
all - tutte 44.978
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 44.978


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20191.217 0 0 0 0 0 0 0 0 0 264 365 588
2019/20203.366 242 151 96 188 424 430 527 371 427 132 234 144
2020/20212.370 177 76 187 137 318 279 174 216 83 402 229 92
2021/20221.585 61 216 237 93 21 55 177 58 137 96 297 137
2022/20231.628 156 192 104 119 256 304 10 140 188 9 57 93
2023/2024702 26 59 36 163 190 41 51 117 11 8 0 0
Totale 12.709