OTTAVIANI, Giampiero
 Distribuzione geografica
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Continente #
NA - Nord America 8.028
EU - Europa 4.024
AS - Asia 826
Continente sconosciuto - Info sul continente non disponibili 8
SA - Sud America 7
OC - Oceania 5
Totale 12.898
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Nazione #
US - Stati Uniti d'America 7.955
GB - Regno Unito 2.392
SE - Svezia 473
DE - Germania 392
CN - Cina 270
UA - Ucraina 214
SG - Singapore 204
IT - Italia 197
TR - Turchia 158
HK - Hong Kong 143
FI - Finlandia 120
BG - Bulgaria 85
CA - Canada 67
FR - Francia 54
RU - Federazione Russa 14
BE - Belgio 13
IE - Irlanda 12
CH - Svizzera 11
HR - Croazia 11
NL - Olanda 11
TW - Taiwan 10
ES - Italia 8
EU - Europa 8
IN - India 8
KR - Corea 8
MX - Messico 6
BR - Brasile 5
AT - Austria 4
AU - Australia 4
ID - Indonesia 4
JP - Giappone 4
MY - Malesia 4
RO - Romania 4
VN - Vietnam 4
BY - Bielorussia 2
DK - Danimarca 2
KZ - Kazakistan 2
LT - Lituania 2
AE - Emirati Arabi Uniti 1
BD - Bangladesh 1
CL - Cile 1
CO - Colombia 1
HU - Ungheria 1
IL - Israele 1
IQ - Iraq 1
IR - Iran 1
KH - Cambogia 1
LV - Lettonia 1
NZ - Nuova Zelanda 1
PH - Filippine 1
RS - Serbia 1
Totale 12.898
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Città #
Southend 2.166
Fairfield 1.239
Woodbridge 802
Ashburn 746
Houston 657
Chandler 593
Jacksonville 514
Ann Arbor 460
Seattle 442
Wilmington 430
Cambridge 418
Dearborn 317
Nyköping 264
Hong Kong 143
Singapore 118
San Diego 101
Des Moines 94
Beijing 87
Princeton 86
Sofia 85
Bremen 83
Izmir 81
Eugene 79
Grafing 72
Montréal 61
Modena 60
Munich 55
Helsinki 42
Mcallen 40
Philadelphia 32
Redwood City 32
New York 26
Milan 25
London 22
Auburn Hills 19
Norwalk 16
Boardman 14
Brussels 13
Nanjing 13
Dublin 12
Verona 12
Hefei 11
Jinan 10
Taipei 10
Bologna 9
Falls Church 9
Hounslow 9
Kunming 9
Shanghai 9
Kilburn 8
Los Angeles 8
Padova 8
Indiana 7
San Mateo 7
Nanchang 5
Bolzano 4
Chiswick 4
Dong Ket 4
Guangzhou 4
Madrid 4
Minneapolis 4
Prescot 4
Saint Petersburg 4
São Paulo 4
Toronto 4
Vienna 4
Bartin 3
Chavannes 3
Gemona 3
Hebei 3
Jakarta 3
Lurate Caccivio 3
Moscow 3
Mountain View 3
Rome 3
Santorso 3
Southwark 3
Sydney 3
Timisoara 3
Arcade 2
Arroyomolinos 2
Assago 2
Augusta 2
Bergamo 2
Chengdu 2
Chicago 2
Chongqing 2
Copenhagen 2
Duncan 2
Eindhoven 2
Fargo 2
Frankfurt am Main 2
Fuzhou 2
Groningen 2
Leawood 2
Maplewood 2
Mexico 2
Minsk 2
Paris 2
Pavlodar 2
Totale 10.815
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Nome #
High figures of merit in degenerate semiconductors. Energy filtering by grain boundaries in heavily doped polycrystalline silicon 358
Evolution of defect profiles in He-implanted silicon studied by slow positrons 245
Visible luminescence from silicon by hydrogen implantation and annealing treatments 214
Thermal desorption spectra from cavities in helium-implanted silicon 212
Bandgap widening in quantum sieves 208
A fast technique for the quantitative analysis of channeling RBS spectra 205
Helium in silicon: Thermal-desorption investigation of bubble precursors 205
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 202
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 201
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 200
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 197
Transmission electron microscopy study of helium implanted silicon 197
Helium-implanted silicon: A study of bubble precursors 194
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 191
Dilute NiPt alloy interactions with Si 191
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 190
Hydrogen precipitation in highly oversaturated single-crystalline silicon 190
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 189
Hydrogen determination in Si-rich oxide thin films 188
Radiation enhanced transport of hydrogen in SiO2 188
Copper–titanium thin film interaction 187
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 186
Using evidence from nanocavities to assess the vibrational properties of external surfaces 182
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 181
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 180
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 179
DLTS and EPR study of defects in H implanted silicon 179
Processing high-quality silicon for microstrip detectors 178
High-dose helium-implanted single-crystal silicon: Annealing behavior 177
Infrared light emission due to radiation damage in crystalline silicon 176
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 176
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 176
Visible photoluminescence from He‐implanted silicon 176
GISAXS study of structural relaxation in amorphous silicon 171
Damage evolution in helium-hydrogen co-implanted (100) silicon 169
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 169
Phase formations in Co-Silicon system 169
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 168
Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors 166
Hydrogen and helium bubbles in silicon 165
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 161
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 161
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 158
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 158
X-ray reflectivity study of hydrogen implanted silicon 156
Characterization of Bioacceptable Carbon Materials 155
Transmission Electron Microscopy study of Helium Implanted Silicon 154
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 150
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 150
Low temperature dopant activation of BF2 implanted silicon 149
Electronic properties of Silicon - transition metal interface compounds 148
Hydrogen injection and retention in nanocavities of single-crystalline silicon 148
GISAXS study of defects in He implanted silicon 148
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 147
EPR study of He-implanted Si 147
Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancy like defects with thermal treatments 146
Porosity in low dielectric constant SiOCH films depth profiled by positron annihilation spectroscopy 145
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 145
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 144
ION MIXING IN SI/GE LAYERED STRUCTURES 140
A simple on-line system employed in diffraction experiments 137
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 135
SOLID-PHASE EPITAXIAL-GROWTH OF GE-SI ALLOYS MADE BY ION-IMPLANTATION 131
Visible light emission from silicon implanted and annealed SiO2 layers 127
Rutherford Backscattering Spectrometry: a technique worth introducing into pedagogy 126
ION-BEAM EFFECTS ON THE SURFACE AND NEAR-SURFACE COMPOSITION OF TASI2 124
Capire la Time-Resolved Reflectivity: una tecnica di analisi basata sull’interferenza da lamina sottile 121
Physics and Art: introducing light-matter interaction by looking at famous paintings 117
AES Study of Room Temperature Oxygen Interaction with Near Noble Metal-Silicon Compounds Surface 114
Costruire i diagrammi di fase dai dati sperimentali: una proposta didattica 113
Understand Time Resolved Reflectivity by simple experiments 108
Materials science and optics in the arts: case studies to improve physics education 107
A Problem for educational research: The updating of the curriculum 99
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium 97
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 96
Tecniche di analisi di fisica della materia e proposte didattiche dai laboratori MASEM: formare gli insegnanti al raccordo tra fisica classica e moderna 85
Process of manufacturing wafers usable in the semiconductor industry 85
Interdiffusion of thin chromium and gold films deposited on silicon 82
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics 81
Oxygen in-diffusion processes in tetragonal YBa2Cu3O7-x oxide 61
Out- and in-diffusion of oxygen in YBa2Cu3O7 - x oxide 59
ELECTRICAL STUDIES ON H-IMPLANTED SILICON 37
Composition and resistivity changes of reactively sputtered W-Si-N thin films under vacuum annealing 16
Initial reactions in Ti-Si(Mo) bilayers 9
High-resolution X-ray diffraction of silicon-on-nothing 7
PREPARATION OF LOW-NOISE HIGH-QUALITY SILICON MICROSTRIP DETECTORS 2
Thermal stability of low dielectric constant porous silica films 1
Deposition temperature determination of HDPCVD silicon dioxide films 1
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Effects of hydrogen incorporation on structural relaxation and vibrational properties of a-CN : H thin films grown by reactive sputtering 1
Initial reactions in Ti-Si bilayers: New indications from in situ measurements 1
VACANCY-HYDROGEN INTERACTION IN H-IMPLANTED SI STUDIED BY POSITRON-ANNIHILATION 1
High-temperature resistance of the YBa2Cu3O6+x tetragonal phase 1
HYDROGEN IN SILICON - STATE, REACTIVITY AND EVOLUTION AFTER ION-IMPLANTATION 1
RAPID THERMAL ANNEALING OF WSIX - INSITU RESISTANCE MEASUREMENTS 1
SNMS STUDIES OF ULSI GATE INTERCONNECTION STRUCTURES 1
KINETIC-ANALYSIS OF C49-TISI2 AND C54-TISI2 FORMATION AT RAPID THERMAL ANNEALING RATES 1
GAAS AND INP SURFACE BEHAVIOR UNDER ION-BOMBARDMENT, ALKALI DEPOSITION AND OXYGEN EXPOSURE 1
DEUTERIUM-DEUTERIUM FUSION BY AN ACTIVATED PRECURSOR 1
STUDY OF THE SP2-TO-SP3 RATIO OF DUAL-ION-BEAM SPUTTERED HYDROGENATED AMORPHOUS-CARBON FILMS 1
Totale 12.975
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Categoria #
all - tutte 50.617
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 50.617
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202.973 0 0 96 188 424 430 527 371 427 132 234 144
2020/20212.370 177 76 187 137 318 279 174 216 83 402 229 92
2021/20221.585 61 216 237 93 21 55 177 58 137 96 297 137
2022/20231.628 156 192 104 119 256 304 10 140 188 9 57 93
2023/2024813 26 59 36 163 190 41 51 117 11 19 17 83
2024/2025157 115 26 16 0 0 0 0 0 0 0 0 0
Totale 12.978