OTTAVIANI, Giampiero
 Distribuzione geografica
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Continente #
NA - Nord America 10.802
EU - Europa 4.590
AS - Asia 3.677
SA - Sud America 331
AF - Africa 41
Continente sconosciuto - Info sul continente non disponibili 9
OC - Oceania 6
Totale 19.456
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Nazione #
US - Stati Uniti d'America 10.680
GB - Regno Unito 2.591
CN - Cina 1.315
SG - Singapore 1.242
HK - Hong Kong 497
SE - Svezia 482
DE - Germania 446
BR - Brasile 282
IT - Italia 223
UA - Ucraina 222
RU - Federazione Russa 187
TR - Turchia 165
VN - Vietnam 142
KR - Corea 136
FI - Finlandia 132
BG - Bulgaria 88
CA - Canada 88
FR - Francia 77
JP - Giappone 31
BD - Bangladesh 27
IN - India 26
NL - Olanda 23
AR - Argentina 22
MX - Messico 19
ID - Indonesia 18
BE - Belgio 15
IE - Irlanda 15
PL - Polonia 15
CH - Svizzera 14
ES - Italia 14
IQ - Iraq 12
HR - Croazia 11
ZA - Sudafrica 11
TW - Taiwan 10
AT - Austria 9
EU - Europa 8
MA - Marocco 8
AE - Emirati Arabi Uniti 7
CO - Colombia 6
MY - Malesia 6
EG - Egitto 5
KE - Kenya 5
LT - Lituania 5
AU - Australia 4
CL - Cile 4
DZ - Algeria 4
EC - Ecuador 4
PA - Panama 4
PE - Perù 4
RO - Romania 4
UZ - Uzbekistan 4
VE - Venezuela 4
BO - Bolivia 3
BY - Bielorussia 3
DO - Repubblica Dominicana 3
GE - Georgia 3
JM - Giamaica 3
KZ - Kazakistan 3
LB - Libano 3
LV - Lettonia 3
PH - Filippine 3
SA - Arabia Saudita 3
SN - Senegal 3
CY - Cipro 2
DK - Danimarca 2
HN - Honduras 2
HU - Ungheria 2
IL - Israele 2
IR - Iran 2
JO - Giordania 2
KG - Kirghizistan 2
KH - Cambogia 2
LA - Repubblica Popolare Democratica del Laos 2
NG - Nigeria 2
NP - Nepal 2
NZ - Nuova Zelanda 2
PK - Pakistan 2
PS - Palestinian Territory 2
RS - Serbia 2
AM - Armenia 1
BA - Bosnia-Erzegovina 1
BQ - ???statistics.table.value.countryCode.BQ??? 1
DJ - Gibuti 1
EE - Estonia 1
GT - Guatemala 1
OM - Oman 1
PT - Portogallo 1
PY - Paraguay 1
SI - Slovenia 1
SK - Slovacchia (Repubblica Slovacca) 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
TN - Tunisia 1
TT - Trinidad e Tobago 1
UG - Uganda 1
UY - Uruguay 1
Totale 19.456
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Città #
Southend 2.166
Fairfield 1.239
Santa Clara 1.044
Ashburn 929
Woodbridge 802
Singapore 801
Houston 667
Chandler 593
Hefei 587
Jacksonville 518
Hong Kong 492
Ann Arbor 460
Seattle 444
Wilmington 433
Cambridge 418
Dearborn 317
Nyköping 264
Los Angeles 204
London 202
San Jose 195
Beijing 148
Buffalo 132
Seoul 128
Council Bluffs 112
The Dalles 108
San Diego 102
Des Moines 94
Munich 91
Sofia 87
Princeton 86
Bremen 83
Izmir 81
Eugene 79
Grafing 72
Chicago 67
Modena 61
Montréal 61
Ho Chi Minh City 50
New York 48
Helsinki 44
Moscow 42
Mcallen 40
Philadelphia 38
Redwood City 32
Milan 30
São Paulo 30
Columbus 29
Salt Lake City 29
Hanoi 28
Shanghai 24
Auburn Hills 19
Kent 18
Tampa 18
Guangzhou 17
Norwalk 16
Orem 16
Dallas 15
Frankfurt am Main 15
Nanjing 15
Boardman 14
Dublin 14
Tokyo 14
Atlanta 13
Brooklyn 13
Brussels 13
Montreal 13
Verona 13
Denver 11
Elk Grove Village 11
Jinan 11
Warsaw 11
Belo Horizonte 10
Boston 10
Jakarta 10
Taipei 10
Turku 10
Bologna 9
Falls Church 9
Hounslow 9
Kunming 9
Campinas 8
Da Nang 8
Kilburn 8
Padova 8
Dhaka 7
Indiana 7
Lancaster 7
Mexico City 7
Miami 7
Newark 7
Phoenix 7
Rio de Janeiro 7
San Francisco 7
San Mateo 7
Sterling 7
Stockholm 7
Vienna 7
Xiamen 7
Brasília 6
Charlotte 6
Totale 15.359
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Nome #
High figures of merit in degenerate semiconductors. Energy filtering by grain boundaries in heavily doped polycrystalline silicon 427
Evolution of defect profiles in He-implanted silicon studied by slow positrons 366
Thermal desorption spectra from cavities in helium-implanted silicon 318
Helium-implanted silicon: A study of bubble precursors 313
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 300
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 297
Visible luminescence from silicon by hydrogen implantation and annealing treatments 290
Bandgap widening in quantum sieves 286
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 285
A fast technique for the quantitative analysis of channeling RBS spectra 284
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 283
Damage evolution in helium-hydrogen co-implanted (100) silicon 282
Transmission electron microscopy study of helium implanted silicon 282
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 280
Dilute NiPt alloy interactions with Si 280
Helium in silicon: Thermal-desorption investigation of bubble precursors 278
Hydrogen and helium bubbles in silicon 276
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 276
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 274
Hydrogen determination in Si-rich oxide thin films 270
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 267
High-dose helium-implanted single-crystal silicon: Annealing behavior 265
Copper–titanium thin film interaction 265
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 262
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 262
DLTS and EPR study of defects in H implanted silicon 261
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 260
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 260
Infrared light emission due to radiation damage in crystalline silicon 257
Processing high-quality silicon for microstrip detectors 253
Electronic properties of Silicon - transition metal interface compounds 252
Hydrogen precipitation in highly oversaturated single-crystalline silicon 251
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 250
Transmission Electron Microscopy study of Helium Implanted Silicon 249
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 249
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 246
Visible photoluminescence from He‐implanted silicon 245
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 242
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 241
Radiation enhanced transport of hydrogen in SiO2 241
Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancy like defects with thermal treatments 240
Phase formations in Co-Silicon system 240
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 238
Using evidence from nanocavities to assess the vibrational properties of external surfaces 237
Porosity in low dielectric constant SiOCH films depth profiled by positron annihilation spectroscopy 231
Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors 229
Hydrogen injection and retention in nanocavities of single-crystalline silicon 226
Visible light emission from silicon implanted and annealed SiO2 layers 225
GISAXS study of structural relaxation in amorphous silicon 225
Characterization of Bioacceptable Carbon Materials 225
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 224
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 223
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 223
X-ray reflectivity study of hydrogen implanted silicon 222
Low temperature dopant activation of BF2 implanted silicon 222
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 219
ION MIXING IN SI/GE LAYERED STRUCTURES 214
ION-BEAM EFFECTS ON THE SURFACE AND NEAR-SURFACE COMPOSITION OF TASI2 208
AES Study of Room Temperature Oxygen Interaction with Near Noble Metal-Silicon Compounds Surface 207
Capire la Time-Resolved Reflectivity: una tecnica di analisi basata sull’interferenza da lamina sottile 206
SOLID-PHASE EPITAXIAL-GROWTH OF GE-SI ALLOYS MADE BY ION-IMPLANTATION 205
A simple on-line system employed in diffraction experiments 201
EPR study of He-implanted Si 201
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 200
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 200
Costruire i diagrammi di fase dai dati sperimentali: una proposta didattica 199
GISAXS study of defects in He implanted silicon 199
Rutherford Backscattering Spectrometry: a technique worth introducing into pedagogy 195
Physics and Art: introducing light-matter interaction by looking at famous paintings 186
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 186
A Problem for educational research: The updating of the curriculum 183
Understand Time Resolved Reflectivity by simple experiments 172
Interdiffusion of thin chromium and gold films deposited on silicon 161
Materials science and optics in the arts: case studies to improve physics education 154
Composition and resistivity changes of reactively sputtered W-Si-N thin films under vacuum annealing 153
Tecniche di analisi di fisica della materia e proposte didattiche dai laboratori MASEM: formare gli insegnanti al raccordo tra fisica classica e moderna 149
Growth kinetics of palladium germanides Pd2Ge and PdGe on single-crystal and evaporated germanium 142
ELECTRICAL STUDIES ON H-IMPLANTED SILICON 139
Out- and in-diffusion of oxygen in YBa2Cu3O7 - x oxide 137
Process of manufacturing wafers usable in the semiconductor industry 136
Oxygen in-diffusion processes in tetragonal YBa2Cu3O7-x oxide 133
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 129
On the formation of nickel and platinum silicide first phase: the dominant role of reaction kinetics 126
High-resolution X-ray diffraction of silicon-on-nothing 78
Initial reactions in Ti-Si(Mo) bilayers 44
PREPARATION OF LOW-NOISE HIGH-QUALITY SILICON MICROSTRIP DETECTORS 2
Thermal stability of low dielectric constant porous silica films 1
Deposition temperature determination of HDPCVD silicon dioxide films 1
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Effects of hydrogen incorporation on structural relaxation and vibrational properties of a-CN : H thin films grown by reactive sputtering 1
Initial reactions in Ti-Si bilayers: New indications from in situ measurements 1
VACANCY-HYDROGEN INTERACTION IN H-IMPLANTED SI STUDIED BY POSITRON-ANNIHILATION 1
High-temperature resistance of the YBa2Cu3O6+x tetragonal phase 1
HYDROGEN IN SILICON - STATE, REACTIVITY AND EVOLUTION AFTER ION-IMPLANTATION 1
RAPID THERMAL ANNEALING OF WSIX - INSITU RESISTANCE MEASUREMENTS 1
SNMS STUDIES OF ULSI GATE INTERCONNECTION STRUCTURES 1
KINETIC-ANALYSIS OF C49-TISI2 AND C54-TISI2 FORMATION AT RAPID THERMAL ANNEALING RATES 1
GAAS AND INP SURFACE BEHAVIOR UNDER ION-BOMBARDMENT, ALKALI DEPOSITION AND OXYGEN EXPOSURE 1
DEUTERIUM-DEUTERIUM FUSION BY AN ACTIVATED PRECURSOR 1
STUDY OF THE SP2-TO-SP3 RATIO OF DUAL-ION-BEAM SPUTTERED HYDROGENATED AMORPHOUS-CARBON FILMS 1
Totale 19.533
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Categoria #
all - tutte 74.517
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 74.517
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.196 0 0 0 0 0 0 174 216 83 402 229 92
2021/20221.585 61 216 237 93 21 55 177 58 137 96 297 137
2022/20231.628 156 192 104 119 256 304 10 140 188 9 57 93
2023/2024813 26 59 36 163 190 41 51 117 11 19 17 83
2024/20253.408 115 26 51 224 679 502 199 252 331 136 433 460
2025/20263.307 340 308 691 516 702 533 217 0 0 0 0 0
Totale 19.536