In situ resistance measurements were used to investigate the initial reactions between a titanium film and a molybdenum-doped silicon film. MeV He-4(+) Rutherford spectrometry and X-ray diffraction were also used. An X-ray amorphous layer having the composition TiSix, with x < 2, is first formed. At 500degreesC TiSi2 grows which could be C-40, and above 550degreesC C-54 is formed. The activation energy of the first intermixing process is 3.1+/-0.1 eV, similar to 2.8+/-0.1 eV which was obtained in samples without molybdenum. (C) 2002 Elsevier Science B.V. All rights reserved.

Initial reactions in Ti-Si(Mo) bilayers / R., Cocchi; Ottaviani, Giampiero; T., Marangon; G., Mastracchio; S., Alberici; G., Queirolo. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 60:(2002), pp. 231-238.

Initial reactions in Ti-Si(Mo) bilayers

OTTAVIANI, Giampiero;
2002-01-01

Abstract

In situ resistance measurements were used to investigate the initial reactions between a titanium film and a molybdenum-doped silicon film. MeV He-4(+) Rutherford spectrometry and X-ray diffraction were also used. An X-ray amorphous layer having the composition TiSix, with x < 2, is first formed. At 500degreesC TiSi2 grows which could be C-40, and above 550degreesC C-54 is formed. The activation energy of the first intermixing process is 3.1+/-0.1 eV, similar to 2.8+/-0.1 eV which was obtained in samples without molybdenum. (C) 2002 Elsevier Science B.V. All rights reserved.
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Initial reactions in Ti-Si(Mo) bilayers / R., Cocchi; Ottaviani, Giampiero; T., Marangon; G., Mastracchio; S., Alberici; G., Queirolo. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 60:(2002), pp. 231-238.
R., Cocchi; Ottaviani, Giampiero; T., Marangon; G., Mastracchio; S., Alberici; G., Queirolo
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/303774
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