The backscattering technique was used to study the interdiffusion process of Cr and Au films deposited on Si substrates. The results indicate that Au diffuses in Cr with an effective diffusion coefficient D = const. * exp(-0.68/kT). The activation energy is consistent with a diffusion process that occurs preferentially through grain boundaries. The high value of the diffusion coefficient justifies the presence of Au at the Cr-Si interface after a low-temperature short-time heat treatment. At temperature > 370°C (the eutectic point of the Si-Au system) and after a longenough heat treatment, the Au is completely mixed with Si.

Interdiffusion of thin chromium and gold films deposited on silicon / Majni, Giuseppe; Ottaviani, Giampiero; Prudenziati, Maria. - In: THIN SOLID FILMS. - ISSN 0040-6090. - STAMPA. - 38:(1976), pp. 15-19.

Interdiffusion of thin chromium and gold films deposited on silicon

MAJNI, Giuseppe;OTTAVIANI, Giampiero;PRUDENZIATI, Maria
1976

Abstract

The backscattering technique was used to study the interdiffusion process of Cr and Au films deposited on Si substrates. The results indicate that Au diffuses in Cr with an effective diffusion coefficient D = const. * exp(-0.68/kT). The activation energy is consistent with a diffusion process that occurs preferentially through grain boundaries. The high value of the diffusion coefficient justifies the presence of Au at the Cr-Si interface after a low-temperature short-time heat treatment. At temperature > 370°C (the eutectic point of the Si-Au system) and after a longenough heat treatment, the Au is completely mixed with Si.
1976
38
15
19
Interdiffusion of thin chromium and gold films deposited on silicon / Majni, Giuseppe; Ottaviani, Giampiero; Prudenziati, Maria. - In: THIN SOLID FILMS. - ISSN 0040-6090. - STAMPA. - 38:(1976), pp. 15-19.
Majni, Giuseppe; Ottaviani, Giampiero; Prudenziati, Maria
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/618358
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