The growth of a displacement field in single crystal silicon resulting from high dose hydrogen implantation and subsequent heat treatments has been investigated by MeV He-4(+) Rutherford backscattering in channeling conditions, double crystal x-ray diffraction, and transmission electron microscopy. The results obtained in samples annealed for various times in the temperature range 220-350 degrees C have been explained in terms of a kinetic model which assumes the formation of clusters of hydrogen molecules. The growth of the displacement field is thermally activated with an activation energy of 0.50+/-0.05 eV, suggesting that the limiting process could be the release of hydrogen atoms bounded to defects created by ion implantation.
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon / D., Bisero; Corni, Federico; Frabboni, Stefano; Tonini, Rita; Ottaviani, Giampiero; R., Balboni. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 83:(1998), pp. 4106-4110.
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon
CORNI, Federico;FRABBONI, Stefano;TONINI, Rita;OTTAVIANI, Giampiero;
1998-01-01
Abstract
The growth of a displacement field in single crystal silicon resulting from high dose hydrogen implantation and subsequent heat treatments has been investigated by MeV He-4(+) Rutherford backscattering in channeling conditions, double crystal x-ray diffraction, and transmission electron microscopy. The results obtained in samples annealed for various times in the temperature range 220-350 degrees C have been explained in terms of a kinetic model which assumes the formation of clusters of hydrogen molecules. The growth of the displacement field is thermally activated with an activation energy of 0.50+/-0.05 eV, suggesting that the limiting process could be the release of hydrogen atoms bounded to defects created by ion implantation.
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