Interactions between thin cobalt, 40 nm, and a thick - 250 nm -silicon film were investigated by in situ sheet resistance measurements. Poly and amorphous silicon films, both deposited by CVD, were used. MeV He-4(+) Rutherford Backscattering and X-ray diffraction techniques were used to infer the kinds and thicknesses of the compounds formed. Co2Si and CoSi form, on both silicon substrates, in the same way and in substantial consistency with the data reported in literature. The formation of CoSi2 seems to be nucleation controlled on polysilicon, while on amorphous the formation is controlled by diffusion and no nucleation barrier has been detected. The amorphous silicon remains amorphous during the CoSi2 formation, thus suggesting that the model which attributes the absence of a nucleation barrier to silicon crystallization does not hold. (C) 2004 Elsevier B.V. All rights reserved.

Phase formations in Co-Silicon system / Corni, Federico; Tonini, Rita; Ottaviani, Giampiero; S., Alberici; D., Erbetta; T., Marangon. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - STAMPA. - 76:(2004), pp. 343-348.

Phase formations in Co-Silicon system

CORNI, Federico;TONINI, Rita;OTTAVIANI, Giampiero;
2004

Abstract

Interactions between thin cobalt, 40 nm, and a thick - 250 nm -silicon film were investigated by in situ sheet resistance measurements. Poly and amorphous silicon films, both deposited by CVD, were used. MeV He-4(+) Rutherford Backscattering and X-ray diffraction techniques were used to infer the kinds and thicknesses of the compounds formed. Co2Si and CoSi form, on both silicon substrates, in the same way and in substantial consistency with the data reported in literature. The formation of CoSi2 seems to be nucleation controlled on polysilicon, while on amorphous the formation is controlled by diffusion and no nucleation barrier has been detected. The amorphous silicon remains amorphous during the CoSi2 formation, thus suggesting that the model which attributes the absence of a nucleation barrier to silicon crystallization does not hold. (C) 2004 Elsevier B.V. All rights reserved.
76
343
348
Phase formations in Co-Silicon system / Corni, Federico; Tonini, Rita; Ottaviani, Giampiero; S., Alberici; D., Erbetta; T., Marangon. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - STAMPA. - 76:(2004), pp. 343-348.
Corni, Federico; Tonini, Rita; Ottaviani, Giampiero; S., Alberici; D., Erbetta; T., Marangon
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/450517
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 10
  • ???jsp.display-item.citation.isi??? 10
social impact