Luminescence at an energy higher than the Si band-gap energy has been observed following H implantation and annealing treatments of Si samples. This phenomenon is discussed considering the damage caused by the H implantation and its evolution with thermal treatments. No definitive answer on the origin of the luminescence is given but various possible models are proposed.

Visible luminescence from silicon by hydrogen implantation and annealing treatments / Pavesi, L; Giebel, G; Tonini, Rita; Corni, Federico; Nobili, Carlo Emanuele; Ottaviani, Giampiero. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 65:(1994), pp. 454-456. [10.1063/1.112331]

Visible luminescence from silicon by hydrogen implantation and annealing treatments

TONINI, Rita;CORNI, Federico;NOBILI, Carlo Emanuele;OTTAVIANI, Giampiero
1994

Abstract

Luminescence at an energy higher than the Si band-gap energy has been observed following H implantation and annealing treatments of Si samples. This phenomenon is discussed considering the damage caused by the H implantation and its evolution with thermal treatments. No definitive answer on the origin of the luminescence is given but various possible models are proposed.
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Visible luminescence from silicon by hydrogen implantation and annealing treatments / Pavesi, L; Giebel, G; Tonini, Rita; Corni, Federico; Nobili, Carlo Emanuele; Ottaviani, Giampiero. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 65:(1994), pp. 454-456. [10.1063/1.112331]
Pavesi, L; Giebel, G; Tonini, Rita; Corni, Federico; Nobili, Carlo Emanuele; Ottaviani, Giampiero
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/10589
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