In situ transmission electron microscopy and thermal desorption spectrometry have been employed to observe the evolution of vacancy-type extended defects and the corresponding helium state in helium implanted single crystal silicon during thermal ramping annealing. The structural evolution starting with the formation of a platelike cluster of high pressurized helium bubbles and ending in an empty nanovoid is performed conserving tha total volume of vacancy-type extended defects forming each cluster. Structural adjstements occur by surface diffusion inside each cluster following a migration and coalescence mechanism in presence of high pressure helium for 350°C /T/570°C. A conservative Ostwald ripening is observed for 570/T/700°C in presence of helium desorption.

Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques / Frabboni, Stefano; Corni, Federico; Nobili, Carlo Emanuele; Tonini, Rita; Ottaviani, Giampiero. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 69:(2004), pp. 165209-1-165209-6. [10.1103/PhysRevB.69.165209]

Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques

FRABBONI, Stefano;CORNI, Federico;NOBILI, Carlo Emanuele;TONINI, Rita;OTTAVIANI, Giampiero
2004

Abstract

In situ transmission electron microscopy and thermal desorption spectrometry have been employed to observe the evolution of vacancy-type extended defects and the corresponding helium state in helium implanted single crystal silicon during thermal ramping annealing. The structural evolution starting with the formation of a platelike cluster of high pressurized helium bubbles and ending in an empty nanovoid is performed conserving tha total volume of vacancy-type extended defects forming each cluster. Structural adjstements occur by surface diffusion inside each cluster following a migration and coalescence mechanism in presence of high pressure helium for 350°C /T/570°C. A conservative Ostwald ripening is observed for 570/T/700°C in presence of helium desorption.
69
165209-1
165209-6
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques / Frabboni, Stefano; Corni, Federico; Nobili, Carlo Emanuele; Tonini, Rita; Ottaviani, Giampiero. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 69:(2004), pp. 165209-1-165209-6. [10.1103/PhysRevB.69.165209]
Frabboni, Stefano; Corni, Federico; Nobili, Carlo Emanuele; Tonini, Rita; Ottaviani, Giampiero
File in questo prodotto:
File Dimensione Formato  
nanovoid.pdf

non disponibili

Tipologia: Post-print dell'autore (bozza post referaggio)
Dimensione 1.36 MB
Formato Adobe PDF
1.36 MB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/721043
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 37
  • ???jsp.display-item.citation.isi??? 38
social impact