In situ transmission electron microscopy and thermal desorption spectrometry have been employed to observe the evolution of vacancy-type extended defects and the corresponding helium state in helium implanted single crystal silicon during thermal ramping annealing. The structural evolution starting with the formation of a platelike cluster of high pressurized helium bubbles and ending in an empty nanovoid is performed conserving tha total volume of vacancy-type extended defects forming each cluster. Structural adjstements occur by surface diffusion inside each cluster following a migration and coalescence mechanism in presence of high pressure helium for 350°C /T/570°C. A conservative Ostwald ripening is observed for 570/T/700°C in presence of helium desorption.

Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques / Frabboni, Stefano; Corni, Federico; Nobili, Carlo Emanuele; Tonini, Rita; Ottaviani, Giampiero. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 69:16(2004), pp. 165209-1-165209-6. [10.1103/PhysRevB.69.165209]

Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques

FRABBONI, Stefano;CORNI, Federico;NOBILI, Carlo Emanuele;TONINI, Rita;OTTAVIANI, Giampiero
2004

Abstract

In situ transmission electron microscopy and thermal desorption spectrometry have been employed to observe the evolution of vacancy-type extended defects and the corresponding helium state in helium implanted single crystal silicon during thermal ramping annealing. The structural evolution starting with the formation of a platelike cluster of high pressurized helium bubbles and ending in an empty nanovoid is performed conserving tha total volume of vacancy-type extended defects forming each cluster. Structural adjstements occur by surface diffusion inside each cluster following a migration and coalescence mechanism in presence of high pressure helium for 350°C /T/570°C. A conservative Ostwald ripening is observed for 570/T/700°C in presence of helium desorption.
2004
69
16
165209-1
165209-6
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques / Frabboni, Stefano; Corni, Federico; Nobili, Carlo Emanuele; Tonini, Rita; Ottaviani, Giampiero. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 69:16(2004), pp. 165209-1-165209-6. [10.1103/PhysRevB.69.165209]
Frabboni, Stefano; Corni, Federico; Nobili, Carlo Emanuele; Tonini, Rita; Ottaviani, Giampiero
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/721043
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