A single chamber system for plasma-enhanced chemical vapor deposition was employed to deposit different films of SiOx:N,H with 0.85 less than or equal to x less than or equal to 1.91, which are studied here by Fourier transform infrared transmission spectroscopy. The sample composition was determined by Rutherford backscattering spectrometry, nuclear reaction, and elastic recoil detection analysis. Moreover, physical properties such as thickness uniformity, deposition rate, density, wet and dry etch rates, and stress are determined. A quantitative study of Si-OH, N-H, and Si-H bonds was performed and interpreted on the basis of the random bonding model; in addition, the presence of NH2, Si-O-Si, H2SiO2, and Si-N groups was detected. The effect of sample annealing at 600 and 900 degrees C was studied and two species of Si-H bonds were identified, one more stable and the other one easily releasable. A reordering effect of annealing was also detected as-a reduction of the amorphous network stress and as the increase of the bond angle in the Si-O-Si groups up to the value typical of thermal SiO2.
|Anno di pubblicazione:||1997|
|Titolo:||Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition|
|Autore/i:||Sassella A; Borghesi A; Corni F; Monelli A; Ottaviani G; Tonini R; Pivac B; Bacchetta M; Zanotti L|
|Codice identificativo ISI:||WOS:A1997WP12700027|
|Codice identificativo Scopus:||2-s2.0-0031535906|
|Tipologia||Articolo su rivista|
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