The giant radiation damage imparted to single-crystalline silicon by the impact of Re2(CO)2+ at 140 keV is studied by conventional and high-resolution transmission electron microscopy. Evidence for damage produced by the correlated motion of the atoms initially forming the molecular ion is presented.
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal / Cerofolini, Gf; Bertoni, S; Meda, L; Balboni, R; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Para, Af. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS. - ISSN 0168-583X. - STAMPA. - 80-81:(1993), pp. 132-136. [10.1016/0168-583X(93)96092-Q]
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal
CORNI, Federico;FRABBONI, Stefano;OTTAVIANI, Giampiero;TONINI, Rita;
1993
Abstract
The giant radiation damage imparted to single-crystalline silicon by the impact of Re2(CO)2+ at 140 keV is studied by conventional and high-resolution transmission electron microscopy. Evidence for damage produced by the correlated motion of the atoms initially forming the molecular ion is presented.
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