High-resolution multi-crystal X-ray diffraction was employed to characterize silicon-on-nothing samples consisting of a one-dimensional periodic array of buried empty channels. p- and n-type silicon starting wafers were used for sample preparation. For the p- type samples, this periodic array gives rise to well defined Fraunhofer diffraction when the channels are normal to the scattering plane. This indicates good lattice quality of the layer containing the channels. Moreover, the lattices of the surface layer and the layer with the channels were almost indistinguishable from that of perfect silicon. Conversely, the n-type samples showed such lattice tilts and out-of-plane mosaic spreads in the surface and buried layers that Fraunhofer diffraction does not occur from the periodic array of the channels. The elucidation of this different behaviour is in progress and will most likely be fruitful after X-ray images of the same samples are taken.

High-resolution X-ray diffraction of silicon-on-nothing / M., Servidori; Ottaviani, Giampiero. - In: JOURNAL OF APPLIED CRYSTALLOGRAPHY. - ISSN 0021-8898. - 38:(2005), pp. 740-748. [10.1107/S0021889805019758]

High-resolution X-ray diffraction of silicon-on-nothing

OTTAVIANI, Giampiero
2005

Abstract

High-resolution multi-crystal X-ray diffraction was employed to characterize silicon-on-nothing samples consisting of a one-dimensional periodic array of buried empty channels. p- and n-type silicon starting wafers were used for sample preparation. For the p- type samples, this periodic array gives rise to well defined Fraunhofer diffraction when the channels are normal to the scattering plane. This indicates good lattice quality of the layer containing the channels. Moreover, the lattices of the surface layer and the layer with the channels were almost indistinguishable from that of perfect silicon. Conversely, the n-type samples showed such lattice tilts and out-of-plane mosaic spreads in the surface and buried layers that Fraunhofer diffraction does not occur from the periodic array of the channels. The elucidation of this different behaviour is in progress and will most likely be fruitful after X-ray images of the same samples are taken.
2005
38
740
748
High-resolution X-ray diffraction of silicon-on-nothing / M., Servidori; Ottaviani, Giampiero. - In: JOURNAL OF APPLIED CRYSTALLOGRAPHY. - ISSN 0021-8898. - 38:(2005), pp. 740-748. [10.1107/S0021889805019758]
M., Servidori; Ottaviani, Giampiero
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/304170
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