VANDELLI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 5.623
EU - Europa 2.438
AS - Asia 2.366
SA - Sud America 312
AF - Africa 46
Continente sconosciuto - Info sul continente non disponibili 9
OC - Oceania 3
Totale 10.797
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Nazione #
US - Stati Uniti d'America 5.538
SG - Singapore 742
PL - Polonia 667
CN - Cina 568
GB - Regno Unito 543
HK - Hong Kong 360
IT - Italia 264
VN - Vietnam 253
BR - Brasile 225
SE - Svezia 190
DE - Germania 167
UA - Ucraina 112
RU - Federazione Russa 106
TR - Turchia 104
FI - Finlandia 100
KR - Corea 81
FR - Francia 74
IN - India 62
NL - Olanda 57
CA - Canada 53
BG - Bulgaria 44
PT - Portogallo 38
ES - Italia 28
BD - Bangladesh 27
AR - Argentina 26
IQ - Iraq 21
EC - Ecuador 19
ID - Indonesia 17
PK - Pakistan 17
JP - Giappone 16
MX - Messico 16
ZA - Sudafrica 16
CO - Colombia 15
TW - Taiwan 15
IR - Iran 14
CH - Svizzera 10
IE - Irlanda 10
MA - Marocco 10
AE - Emirati Arabi Uniti 8
CL - Cile 7
SA - Arabia Saudita 7
DO - Repubblica Dominicana 6
EU - Europa 6
IL - Israele 6
RO - Romania 6
VE - Venezuela 6
JO - Giordania 5
KZ - Kazakistan 5
NP - Nepal 5
PE - Perù 5
TN - Tunisia 5
EG - Egitto 4
LT - Lituania 4
MY - Malesia 4
PH - Filippine 4
UY - Uruguay 4
AU - Australia 3
AZ - Azerbaigian 3
BB - Barbados 3
BE - Belgio 3
BO - Bolivia 3
CZ - Repubblica Ceca 3
DZ - Algeria 3
KG - Kirghizistan 3
NG - Nigeria 3
OM - Oman 3
TH - Thailandia 3
AM - Armenia 2
AT - Austria 2
CR - Costa Rica 2
CY - Cipro 2
HU - Ungheria 2
KE - Kenya 2
MN - Mongolia 2
PY - Paraguay 2
QA - Qatar 2
SV - El Salvador 2
SY - Repubblica araba siriana 2
XK - ???statistics.table.value.countryCode.XK??? 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AD - Andorra 1
AL - Albania 1
BY - Bielorussia 1
DK - Danimarca 1
GE - Georgia 1
GP - Guadalupe 1
JM - Giamaica 1
LB - Libano 1
LU - Lussemburgo 1
LV - Lettonia 1
MD - Moldavia 1
MU - Mauritius 1
RE - Reunion 1
SI - Slovenia 1
SN - Senegal 1
UZ - Uzbekistan 1
VC - Saint Vincent e Grenadine 1
Totale 10.797
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Città #
Warsaw 666
Fairfield 648
Ashburn 515
Santa Clara 479
Singapore 474
Woodbridge 394
Southend 388
Hong Kong 348
Chandler 299
Houston 274
Seattle 257
Ann Arbor 218
Wilmington 215
Jacksonville 187
Cambridge 182
Dearborn 178
San Jose 176
Hefei 157
Nyköping 133
Modena 123
Beijing 114
London 109
Ho Chi Minh City 95
San Diego 73
Chicago 71
Los Angeles 71
Council Bluffs 65
Izmir 64
Seoul 60
Hanoi 57
Helsinki 57
New York 41
Princeton 41
The Dalles 41
Sofia 39
Eugene 37
Moscow 32
Frankfurt am Main 28
Lauterbourg 28
Buffalo 26
Washington 26
Redwood City 24
São Paulo 24
Milan 23
Munich 22
Girona 18
Des Moines 17
Shanghai 17
Delfgauw 16
Enschede 16
Salt Lake City 16
Brantford 14
Grafing 14
Tokyo 14
Falls Church 13
Orem 13
Atlanta 12
Chennai 12
Dallas 12
Columbus 11
Phoenix 11
Boardman 10
Tampa 10
Baghdad 9
Haiphong 9
Johannesburg 9
Norwalk 9
Taipei 9
Toronto 9
Wuhan 9
Ardabil 8
Augusta 8
Belo Horizonte 8
Bremen 8
Brooklyn 8
Dongguan 8
Dublin 8
Montreal 8
New Delhi 8
Rio de Janeiro 8
Saint Petersburg 8
San Mateo 8
Turku 8
Amsterdam 7
Elk Grove Village 7
Mexico City 7
San Francisco 7
Thái Nguyên 7
Ankara 6
Boston 6
Brasília 6
Da Nang 6
Guiyang 6
Hải Dương 6
Jakarta 6
Miano 6
Poplar 6
Prescot 6
Quito 6
Stanford 6
Totale 8.099
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Nome #
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis 686
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks 605
A microscopic physical description of RTN current fluctuations in HfOx RRAM 374
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices 362
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations 344
Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited) 325
Progresses in Modeling HfOx RRAM Operations and Variability 312
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM 307
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction 306
Metal oxide resistive memory switching mechanism based on conductive filament properties 306
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 298
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology 296
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability 294
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories 293
A simulation framework for modeling charge transport and degradation in high-k stacks 286
Grain boundary-driven leakage path formation in HfO2 dielectrics 285
A Physical model of the temperature dependence of the current through SiO2/HfO2 stacks 270
Microscopic Modeling of HfOₓ RRAM Operations: From Forming to Switching 268
A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs 258
Role of Holes and Electrons During Erase of TANOS Memories: Evidences for Dipole Formation and its Impact on Reliability 255
A New Physical Method Based on CV--GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-k/III--V MOSFETs 253
Connecting the physical and electrical properties of Hafnia-based RRAM 252
Microscopic understanding and modeling of HfO2 RRAM device physics 249
Threshold Shift Observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of Forming Gas Anneal 247
Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics 246
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties 242
Modeling of the forming operation in HfO2-base resistive switching memories 239
Microscopic Modeling of Electrical Stress -Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics 239
Random telegraph noise (RTN) in scaled RRAM devices 235
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials 227
Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs 223
Physical modeling of charge transport and degradation in HfO 2 stacks for logic device and memory applications 221
Defect spectroscopy and engineering for nanoscale electron device applications: A novel simulation-based methodology 213
Modeling the Effects of Different Forming Conditions on RRAM Conductive Filament Stability 209
SrTiOx for sub-20 nm DRAM technology nodes - Characterization and modeling 204
Modeling Temperature Dependency (6 - 400K) of the Leakage Current Through the SiO2/High-K Stacks 190
Low Power RRAM with Improved HRS/LRS Uniformity through Efficient Filament Control Using CVS Forming 177
Modeling the charge transport and degradation in HfO 2 dielectric for reliability improvement and life-time predictions in logic and memory devices 174
Impact of Al-based Dipole Formation on Gate Stack Integrity and Reliability 97
Totale 10.867
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Categoria #
all - tutte 37.751
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 37.751
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021142 0 0 0 0 0 0 0 0 0 0 81 61
2021/2022784 36 104 74 31 9 52 44 38 97 62 172 65
2022/2023714 54 84 62 59 94 134 4 88 92 4 22 17
2023/2024490 12 38 35 59 116 61 24 65 5 7 24 44
2024/20251.847 102 14 18 136 324 244 164 145 169 62 207 262
2025/20263.350 201 122 231 225 455 840 410 152 320 330 64 0
Totale 10.867