TONINI, Rita
 Distribuzione geografica
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Continente #
NA - Nord America 7.523
EU - Europa 3.551
AS - Asia 670
Continente sconosciuto - Info sul continente non disponibili 6
SA - Sud America 6
OC - Oceania 4
Totale 11.760
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Nazione #
US - Stati Uniti d'America 7.515
GB - Regno Unito 2.255
SE - Svezia 404
DE - Germania 272
CN - Cina 213
UA - Ucraina 180
SG - Singapore 175
IT - Italia 161
TR - Turchia 138
HK - Hong Kong 98
FI - Finlandia 97
BG - Bulgaria 71
FR - Francia 49
BE - Belgio 15
TW - Taiwan 13
IE - Irlanda 11
NL - Olanda 9
MY - Malesia 7
CH - Svizzera 6
EU - Europa 6
IN - India 6
KR - Corea 6
RU - Federazione Russa 6
BR - Brasile 5
CA - Canada 5
JP - Giappone 5
AT - Austria 4
ES - Italia 4
AU - Australia 3
MX - Messico 3
AE - Emirati Arabi Uniti 2
HR - Croazia 2
IL - Israele 2
LT - Lituania 2
CL - Cile 1
DK - Danimarca 1
ID - Indonesia 1
IQ - Iraq 1
IR - Iran 1
KH - Cambogia 1
LV - Lettonia 1
NZ - Nuova Zelanda 1
PH - Filippine 1
RO - Romania 1
Totale 11.760
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Città #
Southend 2.057
Fairfield 1.256
Woodbridge 769
Ashburn 730
Houston 627
Chandler 508
Ann Arbor 488
Seattle 441
Cambridge 439
Wilmington 434
Jacksonville 429
Dearborn 285
Nyköping 221
Hong Kong 98
Singapore 97
San Diego 89
Izmir 77
Des Moines 76
Princeton 75
Sofia 71
Eugene 69
Beijing 68
Bremen 59
Grafing 51
Modena 50
Philadelphia 40
Helsinki 30
Redwood City 27
Milan 22
London 19
New York 18
Falls Church 17
Auburn Hills 16
Brussels 15
Boardman 13
Nanjing 13
Taipei 13
Hefei 12
Norwalk 12
Dublin 11
Shanghai 11
Verona 10
Hounslow 9
San Mateo 9
Padova 8
Indiana 7
Kilburn 7
Kunming 7
Los Angeles 7
Jinan 6
Bologna 5
Minneapolis 5
Reutlingen 5
Bomporto 4
Chiswick 4
Guangzhou 4
Sesto Fiorentino 4
Southwark 4
São Paulo 4
Bolzano 3
Chavannes 3
Fuzhou 3
Lurate Caccivio 3
Nanchang 3
Prescot 3
Rome 3
Toronto 3
Vienna 3
Acton 2
Arroyomolinos 2
Bergamo 2
Brescia 2
Chengdu 2
Chicago 2
Chongqing 2
Dubai 2
Duncan 2
Groningen 2
Kocaeli 2
Maplewood 2
Mexico 2
Mountain View 2
Paris 2
Pozzallo 2
Pune 2
Reggio Nell'emilia 2
Rubiera 2
Saint Petersburg 2
San Francisco 2
Shioya 2
Stuttgart 2
Sydney 2
Taglio Di Po 2
Triggiano 2
Wandsworth 2
Wenzhou 2
Wuhan 2
Zagreb 2
Aci Sant'antonio 1
Almere Stad 1
Totale 10.051
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Nome #
Evolution of defect profiles in He-implanted silicon studied by slow positrons 245
Large angle convergent beam electron diffraction strain measurements in high dose helium implanted silicon 221
Visible luminescence from silicon by hydrogen implantation and annealing treatments 214
Vacancy-gettering in silicon: Cavities and helium-implantation 212
Thermal desorption spectra from cavities in helium-implanted silicon 212
Bandgap widening in quantum sieves 207
A fast technique for the quantitative analysis of channeling RBS spectra 205
Helium in silicon: Thermal-desorption investigation of bubble precursors 205
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 202
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 201
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 200
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 197
Transmission electron microscopy study of helium implanted silicon 195
Helium-implanted silicon: A study of bubble precursors 194
Evolution of vacancy-like defects in He-implanted (100) Si studied by thermal desorption spectrometry 194
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 190
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 190
Hydrogen precipitation in highly oversaturated single-crystalline silicon 190
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 189
Some aspects of blistering and exfoliation of helium-hydrogen coimplanted (100) silicon 188
Radiation enhanced transport of hydrogen in SiO2 188
Copper–titanium thin film interaction 187
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 186
Hydrogen determination in Si-rich oxide thin films 185
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 181
Vibrational spectroscopy study of Ar+-ion irradiated Si-rich oxide films grown by plasma-enhanced chemical vapor deposition 181
Using evidence from nanocavities to assess the vibrational properties of external surfaces 181
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 180
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 179
DLTS and EPR study of defects in H implanted silicon 179
Processing high-quality silicon for microstrip detectors 178
Infrared light emission due to radiation damage in crystalline silicon 176
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 176
High-dose helium-implanted single-crystal silicon: Annealing behavior 176
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 176
Visible photoluminescence from He‐implanted silicon 176
GISAXS study of structural relaxation in amorphous silicon 171
Photoluminescence characterization of SiGe QW grown by MBE 170
Damage evolution in helium-hydrogen co-implanted (100) silicon 169
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 169
Phase formations in Co-Silicon system 169
In-situ time-resolved reflectivity: a technique useful to investigate solid-state transformations 168
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 168
Early stages of bubble formation in helium-implated (100) silicon 168
Recrystallization of strainedlayers with various Gegradients and in the presence of impurities 167
Hydrogen and helium bubbles in silicon 165
Structural properties of reactively sputtered W-Si-N thin films 161
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 161
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 160
The effect of biaxial stress on the solid phase epitaxial crystallization of GexSi((1-x)) films 159
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 158
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 156
X-ray reflectivity study of hydrogen implanted silicon 155
Transmission Electron Microscopy study of Helium Implanted Silicon 154
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 150
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 150
GISAXS Study of Hydrogen Implanted Silicon 148
Hydrogen injection and retention in nanocavities of single-crystalline silicon 148
GISAXS study of defects in He implanted silicon 148
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 147
EPR study of He-implanted Si 147
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 145
Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation 145
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 144
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 135
Visible light emission from silicon implanted and annealed SiO2 layers 127
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen 105
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 96
Visible photoluminescence from silicon nanoconstrictions formed by heavy hydrogen implantation and annealing treatments 2
Silicon interstitials generation during th exposure of Silicon to hydrogen plasma 2
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Totale 11.824
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Categoria #
all - tutte 44.854
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 44.854
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202.881 0 127 99 189 412 399 479 370 385 105 208 108
2020/20212.373 169 72 197 120 299 297 180 210 87 411 248 83
2021/20221.432 38 220 233 72 22 40 168 56 125 80 266 112
2022/20231.387 125 171 94 93 216 269 8 127 154 8 35 87
2023/2024629 20 48 28 144 152 33 31 81 7 9 11 65
2024/2025117 105 12 0 0 0 0 0 0 0 0 0 0
Totale 11.824