TONINI, Rita
 Distribuzione geografica
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Continente #
NA - Nord America 11.450
EU - Europa 4.338
AS - Asia 3.907
SA - Sud America 390
Continente sconosciuto - Info sul continente non disponibili 71
AF - Africa 64
OC - Oceania 6
Totale 20.226
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Nazione #
US - Stati Uniti d'America 11.296
GB - Regno Unito 2.433
SG - Singapore 1.252
CN - Cina 1.111
HK - Hong Kong 466
SE - Svezia 414
VN - Vietnam 368
IT - Italia 338
DE - Germania 331
BR - Brasile 308
UA - Ucraina 196
TR - Turchia 155
BD - Bangladesh 154
RU - Federazione Russa 151
FR - Francia 141
FI - Finlandia 136
KR - Corea 124
BG - Bulgaria 74
CA - Canada 74
IN - India 68
JP - Giappone 37
MX - Messico 34
AR - Argentina 30
IQ - Iraq 20
TW - Taiwan 18
ZA - Sudafrica 18
AE - Emirati Arabi Uniti 17
BE - Belgio 17
NL - Olanda 17
ID - Indonesia 16
IE - Irlanda 16
PK - Pakistan 16
MY - Malesia 15
PL - Polonia 15
PH - Filippine 14
CO - Colombia 13
EC - Ecuador 13
ES - Italia 13
MA - Marocco 11
CH - Svizzera 10
JM - Giamaica 9
AT - Austria 8
CR - Costa Rica 8
DZ - Algeria 8
UZ - Uzbekistan 8
EU - Europa 6
PE - Perù 6
TN - Tunisia 6
VE - Venezuela 6
CL - Cile 5
EG - Egitto 5
GT - Guatemala 5
JO - Giordania 5
AU - Australia 4
AZ - Azerbaigian 4
BY - Bielorussia 4
DO - Repubblica Dominicana 4
IL - Israele 4
KE - Kenya 4
LT - Lituania 4
PA - Panama 4
PY - Paraguay 4
RS - Serbia 4
BO - Bolivia 3
GE - Georgia 3
NI - Nicaragua 3
PR - Porto Rico 3
PS - Palestinian Territory 3
SA - Arabia Saudita 3
TH - Thailandia 3
TT - Trinidad e Tobago 3
BH - Bahrain 2
CZ - Repubblica Ceca 2
DK - Danimarca 2
ET - Etiopia 2
HN - Honduras 2
HR - Croazia 2
IR - Iran 2
KZ - Kazakistan 2
LA - Repubblica Popolare Democratica del Laos 2
LB - Libano 2
LK - Sri Lanka 2
LV - Lettonia 2
NG - Nigeria 2
NP - Nepal 2
NZ - Nuova Zelanda 2
OM - Oman 2
SN - Senegal 2
UY - Uruguay 2
AF - Afghanistan, Repubblica islamica di 1
AL - Albania 1
AW - Aruba 1
BB - Barbados 1
BN - Brunei Darussalam 1
BQ - ???statistics.table.value.countryCode.BQ??? 1
BS - Bahamas 1
CY - Cipro 1
DJ - Gibuti 1
EE - Estonia 1
GA - Gabon 1
Totale 20.146
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Città #
Southend 2.057
Ashburn 1.444
Fairfield 1.256
Santa Clara 925
Singapore 787
Woodbridge 769
Houston 637
Chandler 509
Hefei 490
Ann Arbor 488
Hong Kong 456
Seattle 447
Cambridge 439
Wilmington 438
Jacksonville 435
San Jose 385
Dearborn 285
Nyköping 221
Los Angeles 210
Council Bluffs 197
London 168
Beijing 147
Buffalo 143
The Dalles 137
Seoul 116
Ho Chi Minh City 115
Hanoi 92
San Diego 90
Chicago 84
Izmir 79
Des Moines 76
Princeton 75
Sofia 73
Eugene 69
Milan 67
Bremen 59
Helsinki 59
Lauterbourg 58
New York 58
Modena 55
Grafing 51
Philadelphia 48
Moscow 33
Munich 33
Columbus 32
São Paulo 32
Salt Lake City 29
Redwood City 27
Shanghai 25
Orem 20
Kent 19
Washington 19
Tampa 18
Dallas 17
Falls Church 17
Haiphong 17
Mexico City 17
Auburn Hills 16
Brantford 16
Da Nang 16
Boardman 15
Brussels 15
Dublin 15
Guangzhou 15
Naples 15
Tokyo 15
Atlanta 14
Nanjing 14
Phoenix 14
Denver 13
Frankfurt am Main 13
Norwalk 13
Taipei 13
Brooklyn 12
Montreal 12
Rio de Janeiro 12
Bolzano 11
Elk Grove Village 11
Toronto 11
Verona 10
Hounslow 9
Miano 9
San Mateo 9
Solihull 9
Warsaw 9
Baghdad 8
Belo Horizonte 8
Jakarta 8
Kunming 8
Padova 8
San Francisco 8
Turku 8
Charlotte 7
Chennai 7
Indiana 7
Kilburn 7
Mumbai 7
Newark 7
San José 7
Sterling 7
Totale 15.617
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Nome #
Evolution of defect profiles in He-implanted silicon studied by slow positrons 431
Thermal desorption spectra from cavities in helium-implanted silicon 392
Large angle convergent beam electron diffraction strain measurements in high dose helium implanted silicon 386
Vacancy-gettering in silicon: Cavities and helium-implantation 384
Helium-implanted silicon: A study of bubble precursors 379
Evolution of vacancy-like defects in He-implanted (100) Si studied by thermal desorption spectrometry 367
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 350
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 346
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 345
Damage evolution in helium-hydrogen co-implanted (100) silicon 335
Copper–titanium thin film interaction 331
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 330
Hydrogen and helium bubbles in silicon 330
Transmission electron microscopy study of helium implanted silicon 325
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 325
Some aspects of blistering and exfoliation of helium-hydrogen coimplanted (100) silicon 322
Helium in silicon: Thermal-desorption investigation of bubble precursors 321
A fast technique for the quantitative analysis of channeling RBS spectra 320
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 319
Bandgap widening in quantum sieves 319
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 319
Hydrogen determination in Si-rich oxide thin films 315
Photoluminescence characterization of SiGe QW grown by MBE 314
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 313
Visible luminescence from silicon by hydrogen implantation and annealing treatments 312
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 310
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 309
High-dose helium-implanted single-crystal silicon: Annealing behavior 306
In-situ time-resolved reflectivity: a technique useful to investigate solid-state transformations 301
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 298
Hydrogen precipitation in highly oversaturated single-crystalline silicon 297
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 297
DLTS and EPR study of defects in H implanted silicon 295
Vibrational spectroscopy study of Ar+-ion irradiated Si-rich oxide films grown by plasma-enhanced chemical vapor deposition 294
GISAXS Study of Hydrogen Implanted Silicon 292
Structural properties of reactively sputtered W-Si-N thin films 287
Processing high-quality silicon for microstrip detectors 285
Infrared light emission due to radiation damage in crystalline silicon 284
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 283
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 283
Visible photoluminescence from He‐implanted silicon 283
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 282
Phase formations in Co-Silicon system 280
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 280
Recrystallization of strainedlayers with various Gegradients and in the presence of impurities 277
Transmission Electron Microscopy study of Helium Implanted Silicon 277
Visible light emission from silicon implanted and annealed SiO2 layers 275
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 273
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 272
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 271
Radiation enhanced transport of hydrogen in SiO2 270
Using evidence from nanocavities to assess the vibrational properties of external surfaces 270
Early stages of bubble formation in helium-implated (100) silicon 266
GISAXS study of structural relaxation in amorphous silicon 265
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 264
The effect of biaxial stress on the solid phase epitaxial crystallization of GexSi((1-x)) films 259
X-ray reflectivity study of hydrogen implanted silicon 258
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 256
Hydrogen injection and retention in nanocavities of single-crystalline silicon 255
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 254
GISAXS study of defects in He implanted silicon 246
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 237
EPR study of He-implanted Si 237
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 232
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen 218
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 209
Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation 203
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 148
Silicon interstitials generation during th exposure of Silicon to hydrogen plasma 86
Visible photoluminescence from silicon nanoconstrictions formed by heavy hydrogen implantation and annealing treatments 71
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Totale 20.226
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Categoria #
all - tutte 76.798
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 76.798
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.174 0 0 233 72 22 40 168 56 125 80 266 112
2022/20231.387 125 171 94 93 216 269 8 127 154 8 35 87
2023/2024629 20 48 28 144 152 33 31 81 7 9 11 65
2024/20252.837 105 22 23 205 545 412 173 223 298 96 370 365
2025/20265.023 285 266 609 429 550 474 596 270 556 407 318 263
2026/2027659 138 273 248 0 0 0 0 0 0 0 0 0
Totale 20.226