TONINI, Rita
 Distribuzione geografica
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Continente #
NA - Nord America 10.946
EU - Europa 4.315
AS - Asia 3.884
SA - Sud America 387
AF - Africa 64
Continente sconosciuto - Info sul continente non disponibili 7
OC - Oceania 6
Totale 19.609
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Nazione #
US - Stati Uniti d'America 10.832
GB - Regno Unito 2.431
SG - Singapore 1.249
CN - Cina 1.106
HK - Hong Kong 461
SE - Svezia 414
VN - Vietnam 368
DE - Germania 330
IT - Italia 322
BR - Brasile 305
UA - Ucraina 195
TR - Turchia 155
RU - Federazione Russa 151
BD - Bangladesh 146
FR - Francia 139
FI - Finlandia 136
KR - Corea 124
BG - Bulgaria 74
IN - India 68
CA - Canada 57
JP - Giappone 37
MX - Messico 31
AR - Argentina 30
IQ - Iraq 20
ZA - Sudafrica 18
AE - Emirati Arabi Uniti 17
BE - Belgio 17
TW - Taiwan 17
ID - Indonesia 16
IE - Irlanda 16
NL - Olanda 16
PK - Pakistan 16
MY - Malesia 15
PL - Polonia 15
CO - Colombia 13
EC - Ecuador 13
ES - Italia 13
PH - Filippine 13
MA - Marocco 11
CH - Svizzera 10
AT - Austria 8
DZ - Algeria 8
UZ - Uzbekistan 8
EU - Europa 6
PE - Perù 6
TN - Tunisia 6
VE - Venezuela 6
CL - Cile 5
EG - Egitto 5
JM - Giamaica 5
JO - Giordania 5
AU - Australia 4
AZ - Azerbaigian 4
BY - Bielorussia 4
DO - Repubblica Dominicana 4
IL - Israele 4
KE - Kenya 4
LT - Lituania 4
PA - Panama 4
PY - Paraguay 4
RS - Serbia 4
BO - Bolivia 3
GE - Georgia 3
GT - Guatemala 3
PS - Palestinian Territory 3
SA - Arabia Saudita 3
TH - Thailandia 3
BH - Bahrain 2
CR - Costa Rica 2
CZ - Repubblica Ceca 2
DK - Danimarca 2
ET - Etiopia 2
HR - Croazia 2
IR - Iran 2
KZ - Kazakistan 2
LA - Repubblica Popolare Democratica del Laos 2
LB - Libano 2
LK - Sri Lanka 2
LV - Lettonia 2
NG - Nigeria 2
NP - Nepal 2
NZ - Nuova Zelanda 2
OM - Oman 2
PR - Porto Rico 2
SN - Senegal 2
UY - Uruguay 2
AF - Afghanistan, Repubblica islamica di 1
AL - Albania 1
BB - Barbados 1
BN - Brunei Darussalam 1
BQ - ???statistics.table.value.countryCode.BQ??? 1
BS - Bahamas 1
CY - Cipro 1
DJ - Gibuti 1
EE - Estonia 1
GA - Gabon 1
GN - Guinea 1
GR - Grecia 1
HN - Honduras 1
HU - Ungheria 1
Totale 19.595
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Città #
Southend 2.057
Ashburn 1.262
Fairfield 1.256
Santa Clara 910
Singapore 784
Woodbridge 769
Houston 636
Chandler 508
Hefei 490
Ann Arbor 488
Hong Kong 451
Seattle 447
Cambridge 439
Wilmington 437
Jacksonville 435
San Jose 370
Dearborn 285
Nyköping 221
Los Angeles 206
London 168
Beijing 143
Buffalo 140
The Dalles 137
Council Bluffs 117
Seoul 116
Ho Chi Minh City 115
Hanoi 92
San Diego 90
Chicago 81
Izmir 79
Des Moines 76
Princeton 75
Sofia 73
Eugene 69
Milan 65
Bremen 59
Helsinki 59
Lauterbourg 58
Modena 55
New York 53
Grafing 51
Philadelphia 47
Moscow 33
Munich 33
São Paulo 32
Salt Lake City 28
Redwood City 27
Columbus 26
Shanghai 25
Orem 20
Kent 19
Washington 19
Tampa 18
Falls Church 17
Haiphong 17
Auburn Hills 16
Brantford 16
Da Nang 16
Dallas 16
Mexico City 16
Boardman 15
Brussels 15
Dublin 15
Guangzhou 15
Naples 15
Tokyo 15
Atlanta 14
Nanjing 14
Frankfurt am Main 13
Norwalk 13
Taipei 13
Brooklyn 12
Montreal 12
Rio de Janeiro 12
Denver 11
Elk Grove Village 11
Phoenix 11
Verona 10
Hounslow 9
Miano 9
San Mateo 9
Solihull 9
Toronto 9
Warsaw 9
Baghdad 8
Belo Horizonte 8
Jakarta 8
Kunming 8
Padova 8
San Francisco 8
Turku 8
Chennai 7
Indiana 7
Kilburn 7
Mumbai 7
Sterling 7
Stockholm 7
Tashkent 7
Bologna 6
Brasília 6
Totale 15.270
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Nome #
Evolution of defect profiles in He-implanted silicon studied by slow positrons 422
Thermal desorption spectra from cavities in helium-implanted silicon 377
Large angle convergent beam electron diffraction strain measurements in high dose helium implanted silicon 376
Vacancy-gettering in silicon: Cavities and helium-implantation 373
Helium-implanted silicon: A study of bubble precursors 369
Evolution of vacancy-like defects in He-implanted (100) Si studied by thermal desorption spectrometry 360
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 342
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 337
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 335
Damage evolution in helium-hydrogen co-implanted (100) silicon 323
Copper–titanium thin film interaction 323
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 322
Hydrogen and helium bubbles in silicon 320
Transmission electron microscopy study of helium implanted silicon 320
Bandgap widening in quantum sieves 316
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 315
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 314
Some aspects of blistering and exfoliation of helium-hydrogen coimplanted (100) silicon 313
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 312
A fast technique for the quantitative analysis of channeling RBS spectra 310
Visible luminescence from silicon by hydrogen implantation and annealing treatments 309
Helium in silicon: Thermal-desorption investigation of bubble precursors 308
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 305
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 304
Photoluminescence characterization of SiGe QW grown by MBE 304
Hydrogen determination in Si-rich oxide thin films 301
In-situ time-resolved reflectivity: a technique useful to investigate solid-state transformations 298
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 298
Hydrogen precipitation in highly oversaturated single-crystalline silicon 293
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 291
DLTS and EPR study of defects in H implanted silicon 290
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 290
High-dose helium-implanted single-crystal silicon: Annealing behavior 288
GISAXS Study of Hydrogen Implanted Silicon 286
Vibrational spectroscopy study of Ar+-ion irradiated Si-rich oxide films grown by plasma-enhanced chemical vapor deposition 285
Structural properties of reactively sputtered W-Si-N thin films 281
Infrared light emission due to radiation damage in crystalline silicon 278
Processing high-quality silicon for microstrip detectors 278
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 278
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 276
Transmission Electron Microscopy study of Helium Implanted Silicon 275
Visible photoluminescence from He‐implanted silicon 275
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 274
Recrystallization of strainedlayers with various Gegradients and in the presence of impurities 271
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 269
Phase formations in Co-Silicon system 267
Using evidence from nanocavities to assess the vibrational properties of external surfaces 267
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 266
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 265
Radiation enhanced transport of hydrogen in SiO2 265
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 263
GISAXS study of structural relaxation in amorphous silicon 261
Visible light emission from silicon implanted and annealed SiO2 layers 260
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 260
Early stages of bubble formation in helium-implated (100) silicon 259
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 251
The effect of biaxial stress on the solid phase epitaxial crystallization of GexSi((1-x)) films 250
Hydrogen injection and retention in nanocavities of single-crystalline silicon 249
X-ray reflectivity study of hydrogen implanted silicon 249
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 248
GISAXS study of defects in He implanted silicon 243
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 226
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 224
EPR study of He-implanted Si 224
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 203
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen 202
Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation 197
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 144
Silicon interstitials generation during th exposure of Silicon to hydrogen plasma 80
Visible photoluminescence from silicon nanoconstrictions formed by heavy hydrogen implantation and annealing treatments 65
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Totale 19.673
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Categoria #
all - tutte 73.927
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 73.927
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.432 38 220 233 72 22 40 168 56 125 80 266 112
2022/20231.387 125 171 94 93 216 269 8 127 154 8 35 87
2023/2024629 20 48 28 144 152 33 31 81 7 9 11 65
2024/20252.837 105 22 23 205 545 412 173 223 298 96 370 365
2025/20265.023 285 266 609 429 550 474 596 270 556 407 318 263
2026/2027106 106 0 0 0 0 0 0 0 0 0 0 0
Totale 19.673