TONINI, Rita
 Distribuzione geografica
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Continente #
NA - Nord America 10.593
EU - Europa 4.242
AS - Asia 3.754
SA - Sud America 382
AF - Africa 64
Continente sconosciuto - Info sul continente non disponibili 7
OC - Oceania 6
Totale 19.048
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Nazione #
US - Stati Uniti d'America 10.505
GB - Regno Unito 2.430
SG - Singapore 1.241
CN - Cina 1.092
HK - Hong Kong 460
SE - Svezia 414
VN - Vietnam 368
DE - Germania 330
BR - Brasile 304
IT - Italia 257
UA - Ucraina 195
TR - Turchia 155
RU - Federazione Russa 151
FI - Finlandia 136
FR - Francia 135
KR - Corea 124
BG - Bulgaria 74
IN - India 68
CA - Canada 43
BD - Bangladesh 40
JP - Giappone 37
MX - Messico 29
AR - Argentina 28
IQ - Iraq 20
ZA - Sudafrica 18
AE - Emirati Arabi Uniti 17
BE - Belgio 17
TW - Taiwan 17
ID - Indonesia 16
IE - Irlanda 16
NL - Olanda 16
PK - Pakistan 16
PL - Polonia 15
MY - Malesia 14
PH - Filippine 13
CO - Colombia 12
EC - Ecuador 12
ES - Italia 11
MA - Marocco 11
CH - Svizzera 10
AT - Austria 8
DZ - Algeria 8
UZ - Uzbekistan 8
EU - Europa 6
PE - Perù 6
TN - Tunisia 6
VE - Venezuela 6
CL - Cile 5
EG - Egitto 5
JO - Giordania 5
AU - Australia 4
AZ - Azerbaigian 4
BY - Bielorussia 4
DO - Repubblica Dominicana 4
IL - Israele 4
KE - Kenya 4
LT - Lituania 4
PA - Panama 4
PY - Paraguay 4
RS - Serbia 4
BO - Bolivia 3
GE - Georgia 3
PS - Palestinian Territory 3
SA - Arabia Saudita 3
TH - Thailandia 3
BH - Bahrain 2
CZ - Repubblica Ceca 2
DK - Danimarca 2
ET - Etiopia 2
HR - Croazia 2
IR - Iran 2
JM - Giamaica 2
KZ - Kazakistan 2
LA - Repubblica Popolare Democratica del Laos 2
LB - Libano 2
LK - Sri Lanka 2
LV - Lettonia 2
NG - Nigeria 2
NP - Nepal 2
NZ - Nuova Zelanda 2
OM - Oman 2
SN - Senegal 2
UY - Uruguay 2
AF - Afghanistan, Repubblica islamica di 1
AL - Albania 1
BB - Barbados 1
BN - Brunei Darussalam 1
BQ - ???statistics.table.value.countryCode.BQ??? 1
BS - Bahamas 1
CY - Cipro 1
DJ - Gibuti 1
EE - Estonia 1
GA - Gabon 1
GN - Guinea 1
GR - Grecia 1
GT - Guatemala 1
HN - Honduras 1
HU - Ungheria 1
KG - Kirghizistan 1
KH - Cambogia 1
Totale 19.038
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Città #
Southend 2.057
Fairfield 1.256
Ashburn 1.196
Santa Clara 880
Singapore 783
Woodbridge 769
Houston 635
Chandler 508
Hefei 490
Ann Arbor 488
Hong Kong 451
Seattle 443
Cambridge 439
Wilmington 437
Jacksonville 434
San Jose 290
Dearborn 285
Nyköping 221
Los Angeles 199
London 168
Beijing 141
The Dalles 137
Buffalo 135
Seoul 116
Ho Chi Minh City 115
Council Bluffs 97
Hanoi 92
San Diego 90
Izmir 79
Chicago 78
Des Moines 76
Princeton 75
Sofia 73
Eugene 69
Bremen 59
Helsinki 59
Lauterbourg 58
Modena 55
Grafing 51
Milan 50
Philadelphia 46
New York 40
Moscow 33
Munich 33
São Paulo 32
Salt Lake City 28
Redwood City 27
Columbus 26
Shanghai 24
Orem 20
Kent 19
Washington 19
Tampa 18
Falls Church 17
Haiphong 17
Auburn Hills 16
Brantford 16
Da Nang 16
Brussels 15
Dublin 15
Guangzhou 15
Mexico City 15
Tokyo 15
Atlanta 14
Nanjing 14
Boardman 13
Frankfurt am Main 13
Taipei 13
Dallas 12
Norwalk 12
Brooklyn 11
Elk Grove Village 11
Montreal 11
Rio de Janeiro 11
Denver 10
Verona 10
Hounslow 9
Naples 9
Phoenix 9
San Mateo 9
Warsaw 9
Baghdad 8
Belo Horizonte 8
Jakarta 8
Kunming 8
Padova 8
San Francisco 8
Solihull 8
Turku 8
Chennai 7
Indiana 7
Kilburn 7
Miano 7
Mumbai 7
Sterling 7
Stockholm 7
Tashkent 7
Bologna 6
Brasília 6
Can Tho 6
Totale 14.994
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Nome #
Evolution of defect profiles in He-implanted silicon studied by slow positrons 412
Large angle convergent beam electron diffraction strain measurements in high dose helium implanted silicon 372
Thermal desorption spectra from cavities in helium-implanted silicon 371
Vacancy-gettering in silicon: Cavities and helium-implantation 368
Helium-implanted silicon: A study of bubble precursors 360
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 334
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 333
Damage evolution in helium-hydrogen co-implanted (100) silicon 320
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 320
Transmission electron microscopy study of helium implanted silicon 317
Hydrogen and helium bubbles in silicon 316
Copper–titanium thin film interaction 313
Bandgap widening in quantum sieves 310
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 309
Evolution of vacancy-like defects in He-implanted (100) Si studied by thermal desorption spectrometry 308
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 306
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 306
Visible luminescence from silicon by hydrogen implantation and annealing treatments 304
A fast technique for the quantitative analysis of channeling RBS spectra 302
Some aspects of blistering and exfoliation of helium-hydrogen coimplanted (100) silicon 301
Helium in silicon: Thermal-desorption investigation of bubble precursors 300
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 299
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 299
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 297
Hydrogen determination in Si-rich oxide thin films 296
In-situ time-resolved reflectivity: a technique useful to investigate solid-state transformations 294
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 293
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 286
Hydrogen precipitation in highly oversaturated single-crystalline silicon 285
High-dose helium-implanted single-crystal silicon: Annealing behavior 283
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 283
DLTS and EPR study of defects in H implanted silicon 281
Vibrational spectroscopy study of Ar+-ion irradiated Si-rich oxide films grown by plasma-enhanced chemical vapor deposition 279
Photoluminescence characterization of SiGe QW grown by MBE 278
Infrared light emission due to radiation damage in crystalline silicon 276
Processing high-quality silicon for microstrip detectors 276
Transmission Electron Microscopy study of Helium Implanted Silicon 272
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 272
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 270
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 269
Structural properties of reactively sputtered W-Si-N thin films 269
Recrystallization of strainedlayers with various Gegradients and in the presence of impurities 265
Visible photoluminescence from He‐implanted silicon 264
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 263
Phase formations in Co-Silicon system 263
Radiation enhanced transport of hydrogen in SiO2 262
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 260
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 260
Visible light emission from silicon implanted and annealed SiO2 layers 257
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 257
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 256
GISAXS Study of Hydrogen Implanted Silicon 252
Using evidence from nanocavities to assess the vibrational properties of external surfaces 252
Early stages of bubble formation in helium-implated (100) silicon 252
GISAXS study of structural relaxation in amorphous silicon 251
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 246
The effect of biaxial stress on the solid phase epitaxial crystallization of GexSi((1-x)) films 246
Hydrogen injection and retention in nanocavities of single-crystalline silicon 245
X-ray reflectivity study of hydrogen implanted silicon 238
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 238
EPR study of He-implanted Si 222
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 220
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 219
GISAXS study of defects in He implanted silicon 217
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 200
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen 198
Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation 191
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 140
Silicon interstitials generation during th exposure of Silicon to hydrogen plasma 76
Visible photoluminescence from silicon nanoconstrictions formed by heavy hydrogen implantation and annealing treatments 62
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Totale 19.112
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Categoria #
all - tutte 69.713
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 69.713
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021331 0 0 0 0 0 0 0 0 0 0 248 83
2021/20221.432 38 220 233 72 22 40 168 56 125 80 266 112
2022/20231.387 125 171 94 93 216 269 8 127 154 8 35 87
2023/2024629 20 48 28 144 152 33 31 81 7 9 11 65
2024/20252.837 105 22 23 205 545 412 173 223 298 96 370 365
2025/20264.568 285 266 609 429 550 474 596 270 556 407 126 0
Totale 19.112