TONINI, Rita
 Distribuzione geografica
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Continente #
NA - Nord America 8.406
EU - Europa 3.638
AS - Asia 893
SA - Sud America 7
Continente sconosciuto - Info sul continente non disponibili 6
OC - Oceania 5
AF - Africa 1
Totale 12.956
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Nazione #
US - Stati Uniti d'America 8.397
GB - Regno Unito 2.255
SE - Svezia 406
SG - Singapore 316
CN - Cina 291
DE - Germania 278
UA - Ucraina 180
IT - Italia 172
TR - Turchia 138
FI - Finlandia 101
HK - Hong Kong 98
BG - Bulgaria 71
RU - Federazione Russa 67
FR - Francia 49
BE - Belgio 15
TW - Taiwan 13
IE - Irlanda 11
NL - Olanda 10
CH - Svizzera 8
JP - Giappone 7
MY - Malesia 7
EU - Europa 6
IN - India 6
KR - Corea 6
BR - Brasile 5
CA - Canada 5
AT - Austria 4
ES - Italia 4
AU - Australia 3
MX - Messico 3
AE - Emirati Arabi Uniti 2
HR - Croazia 2
ID - Indonesia 2
IL - Israele 2
LT - Lituania 2
NZ - Nuova Zelanda 2
CL - Cile 1
DK - Danimarca 1
IQ - Iraq 1
IR - Iran 1
KG - Kirghizistan 1
KH - Cambogia 1
LV - Lettonia 1
PA - Panama 1
PE - Perù 1
PH - Filippine 1
RO - Romania 1
ZA - Sudafrica 1
Totale 12.956
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Città #
Southend 2.057
Fairfield 1.256
Santa Clara 848
Woodbridge 769
Ashburn 732
Houston 627
Chandler 508
Ann Arbor 488
Seattle 441
Cambridge 439
Wilmington 434
Jacksonville 429
Dearborn 285
Singapore 231
Nyköping 221
Hong Kong 98
San Diego 89
Izmir 77
Des Moines 76
Princeton 75
Beijing 71
Sofia 71
Eugene 69
Bremen 59
Grafing 51
Modena 51
Philadelphia 40
Helsinki 32
Moscow 29
Redwood City 27
Milan 25
London 19
New York 18
Falls Church 17
Auburn Hills 16
Brussels 15
Boardman 13
Hefei 13
Nanjing 13
Taipei 13
Los Angeles 12
Norwalk 12
Shanghai 12
Dublin 11
Verona 10
Hounslow 9
San Mateo 9
Padova 8
Indiana 7
Kilburn 7
Kunming 7
Guangzhou 6
Jinan 6
Bologna 5
Minneapolis 5
Munich 5
Reutlingen 5
Bomporto 4
Chiswick 4
Sesto Fiorentino 4
Southwark 4
São Paulo 4
Bolzano 3
Chavannes 3
Chongqing 3
Fuzhou 3
Groningen 3
Lurate Caccivio 3
Nanchang 3
Prescot 3
Rome 3
Toronto 3
Vienna 3
Acton 2
Arroyomolinos 2
Auckland 2
Bergamo 2
Brescia 2
Chengdu 2
Chicago 2
Dubai 2
Duncan 2
Espoo 2
Hikarimachi 2
Kocaeli 2
Maplewood 2
Mexico 2
Mountain View 2
Paris 2
Pozzallo 2
Pune 2
Quanzhou 2
Reggio Nell'emilia 2
Rubiera 2
Saint Petersburg 2
San Francisco 2
Shenyang 2
Shioya 2
Stuttgart 2
Sydney 2
Totale 11.085
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Nome #
Evolution of defect profiles in He-implanted silicon studied by slow positrons 265
Large angle convergent beam electron diffraction strain measurements in high dose helium implanted silicon 241
Vacancy-gettering in silicon: Cavities and helium-implantation 238
Thermal desorption spectra from cavities in helium-implanted silicon 231
Visible luminescence from silicon by hydrogen implantation and annealing treatments 231
Bandgap widening in quantum sieves 226
Helium in silicon: Thermal-desorption investigation of bubble precursors 225
A fast technique for the quantitative analysis of channeling RBS spectra 224
Evolution of vacancy-like defects in He-implanted (100) Si studied by thermal desorption spectrometry 223
Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy 218
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 216
Transmission electron microscopy study of helium implanted silicon 216
Helium/deuterium co-implanted silicon – a thermal desorption spectrometry investigation 216
Crystallization kinetics of boron- and germanium-implanted 〈100〉 Si: a balance between doping and strain effects 214
Helium-implanted silicon: A study of bubble precursors 212
Electron paramagnetic resonance evidence for reversible transformation of thermal donor into shallow donor-type center in hydrogen-implanted silicon 208
Infrared study of Si-rich silicon oxide films deposited by plasma-enhanced chemical vapor deposition 205
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 205
Hydrogen precipitation in highly oversaturated single-crystalline silicon 205
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 205
Hydrogen determination in Si-rich oxide thin films 204
Copper–titanium thin film interaction 204
Radiation enhanced transport of hydrogen in SiO2 204
Some aspects of blistering and exfoliation of helium-hydrogen coimplanted (100) silicon 201
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 199
Using evidence from nanocavities to assess the vibrational properties of external surfaces 197
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 196
Vibrational spectroscopy study of Ar+-ion irradiated Si-rich oxide films grown by plasma-enhanced chemical vapor deposition 196
DLTS and EPR study of defects in H implanted silicon 196
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 195
High-dose helium-implanted single-crystal silicon: Annealing behavior 195
Processing high-quality silicon for microstrip detectors 195
Visible photoluminescence from He‐implanted silicon 195
Pre-cavities defect distribution in He implanted silicon studied by slow positron beam 194
Ultradense gas bubbles in Hydrogen- or Helium-implanted (or co-implanted) Silicon 193
Infrared light emission due to radiation damage in crystalline silicon 191
Damage evolution in helium-hydrogen co-implanted (100) silicon 187
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 186
GISAXS study of structural relaxation in amorphous silicon 186
Early stages of bubble formation in helium-implated (100) silicon 186
Photoluminescence characterization of SiGe QW grown by MBE 185
Phase formations in Co-Silicon system 185
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 185
Hydrogen and helium bubbles in silicon 184
In-situ time-resolved reflectivity: a technique useful to investigate solid-state transformations 183
Recrystallization of strainedlayers with various Gegradients and in the presence of impurities 182
Structural properties of reactively sputtered W-Si-N thin films 178
Electron paramagnetic resonance study of S2 defects in Hydrogen implanted Silicon 178
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 176
The effect of biaxial stress on the solid phase epitaxial crystallization of GexSi((1-x)) films 175
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 174
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 173
X-ray reflectivity study of hydrogen implanted silicon 172
Transmission Electron Microscopy study of Helium Implanted Silicon 170
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 166
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 165
GISAXS study of defects in He implanted silicon 165
EPR study of He-implanted Si 165
Hydrogen injection and retention in nanocavities of single-crystalline silicon 164
GISAXS Study of Hydrogen Implanted Silicon 163
EVIDENCE FOR MOLECULAR-HYDROGEN IN SINGLE-CRYSTAL SILICON 162
SEARCH FOR NUCLEAR-REACTIONS PRODUCED BY THE IMPACT OF HEAVY MOLECULAR-IONS ONTO LID 162
Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation 160
Grazing incidence small-angle X-ray scattering study of defects in deuterium implanted monocrystalline silicon 158
Nanovoid formationin helium-implanted single-crystal silicon studied by in situ techniques 153
Visible light emission from silicon implanted and annealed SiO2 layers 142
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen 124
Reply to comments on 'EPR study of He-implanted Si' by P. Pivac, B. Rakvin, R. Tonini, F. Corni, G. Ottaizani, Published in Mater. Sci. Eng. B73 (2000) 60-63 - Written by M. Kakazey, M. Vlasova, and J.G. Gonzalez-Rodriguez - Reply to discussion 111
Visible photoluminescence from silicon nanoconstrictions formed by heavy hydrogen implantation and annealing treatments 18
Silicon interstitials generation during th exposure of Silicon to hydrogen plasma 17
Structural evolution in Ar+ implanted Si-rich silicon oxide 1
Totale 13.020
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Categoria #
all - tutte 49.856
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 49.856
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.655 0 0 0 0 0 0 479 370 385 105 208 108
2020/20212.373 169 72 197 120 299 297 180 210 87 411 248 83
2021/20221.432 38 220 233 72 22 40 168 56 125 80 266 112
2022/20231.387 125 171 94 93 216 269 8 127 154 8 35 87
2023/2024629 20 48 28 144 152 33 31 81 7 9 11 65
2024/20251.313 105 22 23 205 545 412 1 0 0 0 0 0
Totale 13.020