The recrystallization of amorphous GexSi1-x thin films on Si with uniform and with increasing Ge content is studied. The amorphous-crystal interface roughness is modified by the presence of C and O impurities before entering the GexSi1-x layer. The crystallization kinetics are heavily affected by the resulting interface morphology. A minimum velocity is found in the region of the impurities where the interface starts to roughen; the strain effect induced by the Ge within the GexSi1-x is overcome and the crystallization proceeds according to kinetics very similar to those for pure Si.
Recrystallization of strainedlayers with various Gegradients and in the presence of impurities / Corni, Federico; Tonini, Rita; Balboni, R; Vescan, L.. - In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. - ISSN 0921-5107. - STAMPA. - 28:(1994), pp. 9-13. [10.1016/0921-5107(94)90005-1]
Recrystallization of strainedlayers with various Gegradients and in the presence of impurities
CORNI, Federico;TONINI, Rita;
1994
Abstract
The recrystallization of amorphous GexSi1-x thin films on Si with uniform and with increasing Ge content is studied. The amorphous-crystal interface roughness is modified by the presence of C and O impurities before entering the GexSi1-x layer. The crystallization kinetics are heavily affected by the resulting interface morphology. A minimum velocity is found in the region of the impurities where the interface starts to roughen; the strain effect induced by the Ge within the GexSi1-x is overcome and the crystallization proceeds according to kinetics very similar to those for pure Si.
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