The LACBED technique has been applied to <110> TEM cross-sections of Si sample implanted with H to study the effect of the static disorder on the Rocking Curves (RC) of high angle diffracted beams in presence of platelets and cavities. This effect has been revealed by comparing the RC originating from the perfect crystal and from the implanted layer, respectively. The results are consistent with an atomic root mean square displacement of the order of 10(-2) nm which compares quite well with x-ray measurements performed in the Bragg-symmetric geometry.
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen / Frabboni, Stefano; Gambetta, F; Tonini, Rita; Balboni, R; Armigliato, A.. - STAMPA. - 157:(1997), pp. 415-418. (Intervento presentato al convegno N/A tenutosi a N/A nel N/A).
Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen
FRABBONI, Stefano;TONINI, Rita;
1997
Abstract
The LACBED technique has been applied to <110> TEM cross-sections of Si sample implanted with H to study the effect of the static disorder on the Rocking Curves (RC) of high angle diffracted beams in presence of platelets and cavities. This effect has been revealed by comparing the RC originating from the perfect crystal and from the implanted layer, respectively. The results are consistent with an atomic root mean square displacement of the order of 10(-2) nm which compares quite well with x-ray measurements performed in the Bragg-symmetric geometry.
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