FRABBONI, Stefano
 Distribuzione geografica
Continente #
NA - Nord America 24.439
AS - Asia 10.698
EU - Europa 9.375
SA - Sud America 1.354
Continente sconosciuto - Info sul continente non disponibili 300
AF - Africa 176
OC - Oceania 17
Totale 46.359
Nazione #
US - Stati Uniti d'America 24.034
GB - Regno Unito 3.840
SG - Singapore 3.430
CN - Cina 3.127
IT - Italia 1.348
HK - Hong Kong 1.311
BR - Brasile 1.066
DE - Germania 1.056
VN - Vietnam 1.046
SE - Svezia 845
UA - Ucraina 444
FI - Finlandia 419
RU - Federazione Russa 408
FR - Francia 399
BD - Bangladesh 373
KR - Corea 339
TR - Turchia 322
CA - Canada 234
BG - Bulgaria 168
IN - India 168
AR - Argentina 99
ID - Indonesia 79
JP - Giappone 79
NL - Olanda 72
MX - Messico 68
IQ - Iraq 63
PK - Pakistan 59
ZA - Sudafrica 57
IE - Irlanda 53
AE - Emirati Arabi Uniti 49
CO - Colombia 46
EC - Ecuador 40
ES - Italia 38
AT - Austria 36
PL - Polonia 35
LT - Lituania 34
BE - Belgio 32
CL - Cile 29
MY - Malesia 29
MA - Marocco 26
UZ - Uzbekistan 24
JM - Giamaica 23
TW - Taiwan 23
CH - Svizzera 22
PH - Filippine 22
RO - Romania 21
CR - Costa Rica 19
DO - Repubblica Dominicana 19
VE - Venezuela 19
SA - Arabia Saudita 18
CZ - Repubblica Ceca 17
PY - Paraguay 17
AU - Australia 16
TN - Tunisia 16
EG - Egitto 15
EU - Europa 15
DZ - Algeria 14
JO - Giordania 14
KE - Kenya 14
NP - Nepal 14
PE - Perù 14
UY - Uruguay 14
HN - Honduras 11
IL - Israele 11
LB - Libano 11
AZ - Azerbaigian 10
BO - Bolivia 10
ET - Etiopia 9
GR - Grecia 9
KZ - Kazakistan 9
AL - Albania 8
BY - Bielorussia 8
OM - Oman 8
RS - Serbia 8
TH - Thailandia 8
DK - Danimarca 7
EE - Estonia 7
MD - Moldavia 7
PA - Panama 7
PT - Portogallo 7
BH - Bahrain 6
IR - Iran 6
GE - Georgia 5
KH - Cambogia 5
LV - Lettonia 5
PR - Porto Rico 5
PS - Palestinian Territory 5
HU - Ungheria 4
LK - Sri Lanka 4
LU - Lussemburgo 4
NI - Nicaragua 4
AO - Angola 3
CG - Congo 3
CY - Cipro 3
NG - Nigeria 3
QA - Qatar 3
SC - Seychelles 3
SN - Senegal 3
SY - Repubblica araba siriana 3
AM - Armenia 2
Totale 46.024
Città #
Southend 2.975
Fairfield 2.615
Ashburn 2.395
Singapore 2.222
Santa Clara 2.068
Woodbridge 1.592
Houston 1.363
Hong Kong 1.294
Hefei 1.191
Chandler 1.098
Seattle 1.042
San Jose 1.014
Jacksonville 952
Cambridge 900
Wilmington 873
Ann Arbor 821
Dearborn 623
Council Bluffs 537
Nyköping 496
Beijing 470
London 452
Los Angeles 354
Seoul 327
Ho Chi Minh City 324
The Dalles 313
Chicago 292
Hanoi 254
Helsinki 252
Modena 237
Buffalo 229
San Diego 229
Milan 190
Princeton 188
Izmir 166
Sofia 166
Des Moines 161
Grafing 157
Eugene 152
New York 148
Lauterbourg 143
Munich 135
Columbus 112
Moscow 104
Redwood City 91
Shanghai 91
São Paulo 91
Salt Lake City 87
San Antonio 84
Bremen 81
Dallas 71
Guangzhou 61
Montréal 61
Da Nang 50
Dublin 49
Philadelphia 49
Tokyo 49
Jakarta 46
Haiphong 45
Orem 45
Frankfurt am Main 44
Bologna 43
Rome 41
Washington 41
Mcallen 40
Rio de Janeiro 40
Atlanta 36
Kent 36
Phoenix 36
Toronto 36
Brooklyn 34
Tampa 34
Denver 33
Falls Church 33
Kunming 31
Belo Horizonte 30
Chennai 30
Miano 30
San Francisco 30
Nanjing 28
Dhaka 27
Elk Grove Village 27
Boardman 26
Norwalk 26
Brussels 25
Montreal 25
Warsaw 25
Amsterdam 24
Baghdad 23
Brantford 23
Brasília 23
Johannesburg 22
Redondo Beach 22
San Mateo 22
Kilburn 21
Miami 21
Naples 21
Quito 21
Charlotte 20
Tashkent 20
Hangzhou 19
Totale 33.866
Nome #
High figures of merit in degenerate semiconductors. Energy filtering by grain boundaries in heavily doped polycrystalline silicon 481
Il microscopio ottico a proiezione come modello per introdurre la microscopia elettronica in trasmissione 433
Highly efficient electron vortex beams generated by nanofabricated phase holograms 412
Assembly and structure of Ni/NiO core–shell nanoparticles 411
Characterization of a new cobalt precursor for focused beam deposition of magnetic nanostructures 392
Holographic generation of highly twisted electron beams 390
Thermal desorption spectra from cavities in helium-implanted silicon 385
Vacancy-gettering in silicon: Cavities and helium-implantation 382
Large angle convergent beam electron diffraction strain measurements in high dose helium implanted silicon 382
Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si 382
Structure and stability of nickel/nickel oxide core-shell nanoparticles 379
Helium-implanted silicon: A study of bubble precursors 374
The Young-Feynman two-slits experiment with single electrons: Build-up of the interference pattern and arrival-time distribution using a fast-readout pixel detector 371
Assembly and Fine Analysis of Ni/MgO Core/Shell Nanoparticles 367
Generation of Nondiffracting Electron Bessel Beams 354
Single-metalloprotein wet biotransistor 354
Focused Electron Beam Deposition of Nanowires from Cobalt Tricarbonyl Nitrosyl (Co(CO)(3)NO) Precursor 354
Elastic and inelastic electrons in the double-slit experiment: A variant of Feynman's which-way set-up 353
Enhancement of the power factor in two-phase silicon-boron nanocrystalline alloys 351
A 4096-pixel MAPS detector used to investigate the single-electron distribution in a Young–Feynman two-slit interference experiment 341
Application of a HEPE-oriented 4096-MAPS to time analysis of single electron distribution in a two-slits interference experiment 341
Observation of nanoscale magnetic fields using twisted electron beams 341
Build-up of interference patterns with single electrons 340
Electron diffraction with ten nanometer beam size for strain analysis of nanodevices 333
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 329
Experimental realization of the Ehrenberg-Siday thought experiment 329
Controlled growth of Ni/NiO core–shell nanoparticles: Structure, morphology and tuning of magnetic properties 328
Hydrogen and helium bubbles in silicon 327
ANALYTICAL ELECTRON-MICROSCOPY OF SI1-XGEX/SI HETEROSTRUCTURES AND LOCAL ISOLATION STRUCTURES 324
Measuring the orbital angular momentum spectrum of an electron beam 323
Transmission electron microscopy study of helium implanted silicon 323
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 321
Morphological and mechanical characterization of composite calcite/SWCNT–COOH single crystals 320
Realization of electron vortices with large orbital angular momentum using miniature holograms fabricated by electron beam lithography 318
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 315
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 308
Suspended nanostructures grown by electron beam-induced deposition of Pt and TEOS precursors 307
Generation and application of bessel beams in electron microscopy 305
Combination of Electron Energy-loss Spectroscopy and Orbital Angular Momentum Spectroscopy. Applications to Electron Magnetic Chiral Dichroism, Plasmon-loss, and Core-loss 304
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 303
High-dose helium-implanted single-crystal silicon: Annealing behavior 303
Experiments and Potentialities for the use of Bessel Beam in Superresolution STEM 303
Electrical characterization of suspended Pt nanowires grown by EBID with water vapour assistance 301
Comparison of Cliff-Lorimer-Based Methods of Scanning Transmission Electron Microscopy (STEM) Quantitative X-Ray Microanalysis for Application to Silicon Oxycarbides Thin Films 301
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 296
Hydrogen precipitation in highly oversaturated single-crystalline silicon 296
Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancy like defects with thermal treatments 295
Structural transitions in electron beam deposited Co-carbonyl suspended nanowires at high electrical current densities 293
The Young-Feynman controlled double-slit electron interference experiment 293
Determination of bulk mismatch values in transmission electron microscopy cross-sections of heterostructures by convergent-beam electron diffraction 292
HRTEM and HAADF analysis of Ni Multi-Twinned Nanoparticles 287
Phase retrieval of an electron vortex beam using diffraction holography 286
Structural properties of reactively sputtered W-Si-N thin films 285
Magnetic characterization of cobalt nanowires and square nanorings fabricated by focused electron beam induced deposition 285
Bulk mismatch values of heterostructures as determined from convergent beam electron diffraction on thin cross sections 283
Processing high-quality silicon for microstrip detectors 282
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 281
Structured quantum waves 280
Power Factor Enhancement by Inhomogeneous Distribution of Dopants in Two-Phase Nanocrystalline Systems 280
Fabrication of FeSi and Fe3Si compounds by electron beam induced mixing of [Fe/Si]2 and [Fe3/Si]2 multilayers grown by focused electron beam induced deposition 280
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 280
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 278
Method for determination of the displacement field in patterned nanostructures by TEM/CBED analysis of split high-order Laue zone line profiles 278
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 278
Alloy multilayers and ternary nanostructures by direct-write approach 277
Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1−xNx intercalated GaAs/GaAs1−xNx:H heterostructures 277
Transmission Electron Microscopy study of Helium Implanted Silicon 276
Innovative Phase Plates for Beam Shaping 275
Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices 275
Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors 273
Two and three slit electron interference and diffraction experiments 271
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 270
Using evidence from nanocavities to assess the vibrational properties of external surfaces 269
Orbital Angular Momentum and Energy Loss Characterization of Plasmonic Excitations in Metallic Nanostructures in TEM 269
Low temperature dopant activation of BF2 implanted silicon 267
Strain field reconstruction in shallow trench isolation structures by CBED and LACBED 264
Fabrication by electron beam induced deposition and transmission electron microscopic characterization of sub-10-nm freestanding Pt nanowires 263
A novel Monte-Carlo based method for quantitative thin film X-ray microanalysis 262
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 262
Controlled co-deposition of FePt nanoparticles embedded in MgO: a detailed investigation of structure and electronic and magnetic properties 261
Effects of thermal annealing on the structural properties of sputtered W-Si-N diffusion barriers 261
Strain in silicon below Si3N4 stripes, comparison between SUPREM IV calculation and TEM/CBED measurements 260
Electron-Beam Shaping in the Transmission Electron Microscope: Control of Electron-Beam Propagation Along Atomic Columns 260
Nondestructive Measurement of Orbital Angular Momentum for an Electron Beam 259
Strain characterisation at the nm scale of deep sub-micron devices by convergent-beam electron diffraction 258
Four slits interference and diffraction experiments 256
The effect of biaxial stress on the solid phase epitaxial crystallization of GexSi((1-x)) films 256
TEM study of annealed Pt nanostructures grown by electron beam induced deposition 255
Hydrogen injection and retention in nanocavities of single-crystalline silicon 254
Structural evolution and graphitization of metallorganic-Pt suspended nanowires under high-current-density electrical test 254
Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM 254
Dynamical simulation of LACBED patterns in cross-sectioned heterostructures 252
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 252
Convergent beam electron diffraction investigation of strain induced by Ti self-aligned silicides in shallow trench Si isolation structures 250
Multiple beam interference and diffraction with FIB fabricated nano-slits 250
Young's double-slit interference experiment with electrons 250
Static disorder depth profile in ion implanted materials by means of large angle convergent beam electron diffraction 249
Investigation of strain distribution in LOCOS structures by dynamical simulation of LACBED patterns 249
Fabrication of 5 nm gap pillar-electrodes by electron-beam Pt deposition 248
CBED STRAIN-MEASUREMENTS IN BORON IMPLANTED SILICON 248
Totale 30.389
Categoria #
all - tutte 174.356
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 174.356


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.681 0 0 464 148 86 141 344 142 314 262 457 323
2022/20233.096 327 331 238 212 411 591 52 295 427 26 97 89
2023/20241.678 57 132 68 259 345 145 166 214 43 32 68 149
2024/20257.355 239 80 88 532 1.300 1.058 530 475 662 390 958 1.043
2025/202612.903 833 678 1.420 1.177 1.690 1.118 1.551 647 1.300 1.040 807 642
2026/20271.456 520 788 148 0 0 0 0 0 0 0 0 0
Totale 46.359