FRABBONI, Stefano
 Distribuzione geografica
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Continente #
NA - Nord America 20.115
EU - Europa 8.432
AS - Asia 8.140
SA - Sud America 1.015
AF - Africa 85
Continente sconosciuto - Info sul continente non disponibili 17
OC - Oceania 10
Totale 37.814
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Nazione #
US - Stati Uniti d'America 19.942
GB - Regno Unito 3.807
CN - Cina 2.893
SG - Singapore 2.737
HK - Hong Kong 1.185
DE - Germania 1.002
IT - Italia 973
BR - Brasile 871
SE - Svezia 843
UA - Ucraina 422
RU - Federazione Russa 400
VN - Vietnam 361
TR - Turchia 302
FI - Finlandia 266
KR - Corea 264
FR - Francia 221
BG - Bulgaria 167
CA - Canada 115
IN - India 76
ID - Indonesia 61
NL - Olanda 61
AR - Argentina 56
BD - Bangladesh 52
IE - Irlanda 46
JP - Giappone 43
ZA - Sudafrica 37
LT - Lituania 31
AT - Austria 29
PL - Polonia 27
MX - Messico 26
BE - Belgio 25
IQ - Iraq 24
EC - Ecuador 22
ES - Italia 20
UZ - Uzbekistan 17
AE - Emirati Arabi Uniti 16
CH - Svizzera 16
PK - Pakistan 16
RO - Romania 16
CO - Colombia 15
EU - Europa 15
CZ - Repubblica Ceca 13
CL - Cile 11
DO - Repubblica Dominicana 11
MY - Malesia 10
PY - Paraguay 10
TW - Taiwan 10
AU - Australia 9
GR - Grecia 9
UY - Uruguay 9
VE - Venezuela 9
EG - Egitto 8
MA - Marocco 8
NP - Nepal 8
JM - Giamaica 7
KE - Kenya 7
KZ - Kazakistan 7
PE - Perù 7
TN - Tunisia 7
IR - Iran 6
BO - Bolivia 5
JO - Giordania 5
MD - Moldavia 5
SA - Arabia Saudita 5
AZ - Azerbaigian 4
GE - Georgia 4
HN - Honduras 4
IL - Israele 4
LB - Libano 4
OM - Oman 4
PH - Filippine 4
TH - Thailandia 4
AL - Albania 3
DZ - Algeria 3
HU - Ungheria 3
LV - Lettonia 3
PA - Panama 3
SN - Senegal 3
AM - Armenia 2
BA - Bosnia-Erzegovina 2
BH - Bahrain 2
BY - Bielorussia 2
DK - Danimarca 2
EE - Estonia 2
ET - Etiopia 2
LA - Repubblica Popolare Democratica del Laos 2
LK - Sri Lanka 2
LU - Lussemburgo 2
NO - Norvegia 2
PT - Portogallo 2
RE - Reunion 2
RS - Serbia 2
SI - Slovenia 2
SK - Slovacchia (Repubblica Slovacca) 2
SM - San Marino 2
AI - Anguilla 1
BS - Bahamas 1
CD - Congo 1
CG - Congo 1
CR - Costa Rica 1
Totale 37.793
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Città #
Southend 2.975
Fairfield 2.615
Santa Clara 1.905
Singapore 1.769
Ashburn 1.592
Woodbridge 1.592
Houston 1.345
Hefei 1.190
Hong Kong 1.180
Chandler 1.098
Seattle 1.035
Jacksonville 942
Cambridge 900
Wilmington 865
Ann Arbor 821
Dearborn 622
Nyköping 496
London 451
Beijing 366
Los Angeles 283
Seoul 256
Modena 226
San Diego 225
Council Bluffs 206
Buffalo 197
Princeton 188
Izmir 166
Sofia 166
Des Moines 157
Grafing 157
Chicago 155
Eugene 152
Munich 135
Ho Chi Minh City 116
The Dalles 110
Moscow 103
Helsinki 101
Redwood City 91
Hanoi 90
Shanghai 83
Bremen 81
Milan 80
São Paulo 76
New York 75
Columbus 73
Salt Lake City 62
Montréal 61
Guangzhou 58
Dallas 46
Dublin 45
Jakarta 43
Philadelphia 43
Mcallen 40
Bologna 35
Kent 35
Falls Church 33
Kunming 31
Rio de Janeiro 31
Rome 30
Tokyo 28
Nanjing 27
Belo Horizonte 26
Norwalk 25
Tampa 24
Atlanta 23
Brussels 23
Elk Grove Village 23
Frankfurt am Main 23
Phoenix 22
Redondo Beach 22
San Mateo 22
Brooklyn 21
Kilburn 21
Warsaw 21
San Francisco 20
Brasília 19
Haiphong 19
Amsterdam 18
Boardman 18
Denver 18
Toronto 18
Turku 18
Changsha 17
Johannesburg 17
Lancaster 16
Chennai 15
Dhaka 15
Jinan 15
Padova 15
Tashkent 15
Montreal 14
Nuremberg 14
Orem 14
Stockholm 14
Hangzhou 13
Sterling 13
Verona 13
Xi'an 13
Zhengzhou 13
Auburn Hills 12
Totale 28.857
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Nome #
High figures of merit in degenerate semiconductors. Energy filtering by grain boundaries in heavily doped polycrystalline silicon 423
Il microscopio ottico a proiezione come modello per introdurre la microscopia elettronica in trasmissione 390
Characterization of a new cobalt precursor for focused beam deposition of magnetic nanostructures 346
Assembly and structure of Ni/NiO core–shell nanoparticles 345
Large angle convergent beam electron diffraction strain measurements in high dose helium implanted silicon 334
Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si 329
Vacancy-gettering in silicon: Cavities and helium-implantation 328
Structure and stability of nickel/nickel oxide core-shell nanoparticles 326
Holographic generation of highly twisted electron beams 316
Assembly and Fine Analysis of Ni/MgO Core/Shell Nanoparticles 314
Highly efficient electron vortex beams generated by nanofabricated phase holograms 311
Thermal desorption spectra from cavities in helium-implanted silicon 308
Helium-implanted silicon: A study of bubble precursors 297
Focused Electron Beam Deposition of Nanowires from Cobalt Tricarbonyl Nitrosyl (Co(CO)(3)NO) Precursor 292
Single-metalloprotein wet biotransistor 291
Application of a HEPE-oriented 4096-MAPS to time analysis of single electron distribution in a two-slits interference experiment 290
Generation of Nondiffracting Electron Bessel Beams 285
A 4096-pixel MAPS detector used to investigate the single-electron distribution in a Young–Feynman two-slit interference experiment 284
Observation of nanoscale magnetic fields using twisted electron beams 283
Measuring the orbital angular momentum spectrum of an electron beam 278
Enhancement of the power factor in two-phase silicon-boron nanocrystalline alloys 277
Experimental realization of the Ehrenberg-Siday thought experiment 277
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal 276
HYDROGEN-RELATED COMPLEXES AS THE STRESSING SPECIES IN HIGH-FLUENCE, HYDROGEN-IMPLANTED, SINGLE-CRYSTAL SILICON 275
The Young-Feynman two-slits experiment with single electrons: Build-up of the interference pattern and arrival-time distribution using a fast-readout pixel detector 275
Build-up of interference patterns with single electrons 274
Realization of electron vortices with large orbital angular momentum using miniature holograms fabricated by electron beam lithography 272
Transmission electron microscopy study of helium implanted silicon 272
ANALYTICAL ELECTRON-MICROSCOPY OF SI1-XGEX/SI HETEROSTRUCTURES AND LOCAL ISOLATION STRUCTURES 270
Combination of Electron Energy-loss Spectroscopy and Orbital Angular Momentum Spectroscopy. Applications to Electron Magnetic Chiral Dichroism, Plasmon-loss, and Core-loss 270
Controlled growth of Ni/NiO core–shell nanoparticles: Structure, morphology and tuning of magnetic properties 268
Elastic and inelastic electrons in the double-slit experiment: A variant of Feynman's which-way set-up 267
Adsorption equilibria and kinetics of H2 at nearly ideal (2 x 1) Si(1 0 0) inner surfaces 266
Hydrogen and helium bubbles in silicon 264
High-dose helium-implanted single-crystal silicon: Annealing behavior 262
Morphological and mechanical characterization of composite calcite/SWCNT–COOH single crystals 262
Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si 259
Structural transitions in electron beam deposited Co-carbonyl suspended nanowires at high electrical current densities 259
Structured quantum waves 256
Nanocavities in silicon: An infrared investigation of internal surface reconstruction after hydrogen implantation 255
Experiments and Potentialities for the use of Bessel Beam in Superresolution STEM 254
Silicon interstitials generation during the exposure of silicon to hydrogen plasma 253
Electrical characterization of suspended Pt nanowires grown by EBID with water vapour assistance 251
Comparison of Cliff-Lorimer-Based Methods of Scanning Transmission Electron Microscopy (STEM) Quantitative X-Ray Microanalysis for Application to Silicon Oxycarbides Thin Films 249
Processing high-quality silicon for microstrip detectors 248
Generation and application of bessel beams in electron microscopy 248
HRTEM and HAADF analysis of Ni Multi-Twinned Nanoparticles 247
Determination of bulk mismatch values in transmission electron microscopy cross-sections of heterostructures by convergent-beam electron diffraction 244
Hydrogen precipitation in highly oversaturated single-crystalline silicon 244
A Tool for the Spectroscopic Investigation of Hydrogen-Silicon Interaction 244
Suspended nanostructures grown by electron beam-induced deposition of Pt and TEOS precursors 243
Transmission Electron Microscopy study of Helium Implanted Silicon 243
Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1−xNx intercalated GaAs/GaAs1−xNx:H heterostructures 242
Evidence for H-2 at high pressure in the silicon nanocavities after dipping in HF solution 241
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon 240
Power Factor Enhancement by Inhomogeneous Distribution of Dopants in Two-Phase Nanocrystalline Systems 239
Bulk mismatch values of heterostructures as determined from convergent beam electron diffraction on thin cross sections 237
Structural properties of reactively sputtered W-Si-N thin films 237
Orbital Angular Momentum and Energy Loss Characterization of Plasmonic Excitations in Metallic Nanostructures in TEM 237
Fabrication of FeSi and Fe3Si compounds by electron beam induced mixing of [Fe/Si]2 and [Fe3/Si]2 multilayers grown by focused electron beam induced deposition 236
Innovative Phase Plates for Beam Shaping 235
Using evidence from nanocavities to assess the vibrational properties of external surfaces 234
Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon 233
Two and three slit electron interference and diffraction experiments 233
Strain field reconstruction in shallow trench isolation structures by CBED and LACBED 232
INFLUENCE OF IMPLANT DOSE AND TARGET TEMPERATURE ON CRYSTAL QUALITY AND JUNCTION DEPTH OF BORON-DOPED SILICON LAYERS 230
Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancy like defects with thermal treatments 230
Phase retrieval of an electron vortex beam using diffraction holography 230
Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices 229
Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM 228
Magnetic characterization of cobalt nanowires and square nanorings fabricated by focused electron beam induced deposition 228
Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors 227
Hydrogen injection and retention in nanocavities of single-crystalline silicon 223
Effects of thermal annealing on the structural properties of sputtered W-Si-N diffusion barriers 223
Static disorder depth profile in ion implanted materials by means of large angle convergent beam electron diffraction 221
Alloy multilayers and ternary nanostructures by direct-write approach 220
Electron-Beam Shaping in the Transmission Electron Microscope: Control of Electron-Beam Propagation Along Atomic Columns 220
Four slits interference and diffraction experiments 219
Effect of Nanocavities on the Thermoelectric Properties of Polycrystalline Silicon 218
Controlled co-deposition of FePt nanoparticles embedded in MgO: a detailed investigation of structure and electronic and magnetic properties 218
LATTICE STRAIN AND STATIC DISORDER IN HYDROGEN IMPLANTED AND ANNEALED SINGLE CRYSTAL SILICON AS DETERMINED BY LARGE ANGLE CONVERGENT BEAM ELECTRON DIFFRACTION 218
Dynamical simulation of LACBED patterns in cross-sectioned heterostructures 217
Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids 217
Young's double-slit interference experiment with electrons 217
Method for determination of the displacement field in patterned nanostructures by TEM/CBED analysis of split high-order Laue zone line profiles 216
Low temperature dopant activation of BF2 implanted silicon 216
Nanovoid Formation and Dynamics in He+-Implanted Nanocrystalline Silicon 215
FIB Preparation of a NiO Wedge-Lamella and STEM X-Ray Microanalysis for the Determination of the Experimental k(O-Ni) Cliff-Lorimer Coefficient 215
The Young-Feynman controlled double-slit electron interference experiment 214
Transmission Electron Microscopy characterization and sculpting of sub-1 nm Si-O-C freestanding nanowires grown by electron beam induced deposition 213
The effect of biaxial stress on the solid phase epitaxial crystallization of GexSi((1-x)) films 213
Structural evolution and graphitization of metallorganic-Pt suspended nanowires under high-current-density electrical test 212
Strain characterisation at the nm scale of deep sub-micron devices by convergent-beam electron diffraction 211
Fabrication by electron beam induced deposition and transmission electron microscopic characterization of sub-10-nm freestanding Pt nanowires 211
Influence of Grain Size on the Thermoelectric Properties of Polycrystalline Silicon Nanowires 209
A novel Monte-Carlo based method for quantitative thin film X-ray microanalysis 207
Fabrication of 5 nm gap pillar-electrodes by electron-beam Pt deposition 207
Electron diffraction with ten nanometer beam size for strain analysis of nanodevices 207
Ion and electron beam nanofabrication of the which-way double-slit experiment in a transmission electron microscope 204
Silicon de novo: Energy filtering and enhanced thermoelectric performances of nanocrystalline silicon and silicon alloys 204
Totale 25.377
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Categoria #
all - tutte 147.627
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 147.627
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20213.263 0 0 0 0 0 380 703 502 382 800 292 204
2021/20223.127 156 290 464 148 86 141 344 142 314 262 457 323
2022/20233.096 327 331 238 212 411 591 52 295 427 26 97 89
2023/20241.678 57 132 68 259 345 145 166 214 43 32 68 149
2024/20257.355 239 80 88 532 1.300 1.058 530 475 662 390 958 1.043
2025/20266.093 833 678 1.420 1.177 1.690 295 0 0 0 0 0 0
Totale 38.093