A new experimental method for static disorder depth profile in ion implanted crystalline materials is presented. Large angle convergent beam electron diffraction patterns of high angle reflections are used to directly compare, on a depth scale of the order of 10 nm, the integrated intensity coming from the undamaged crystal and from different slabs of the damaged layer. The case of high dose hydrogen implanted single crystal silicon wafers is studied. The results agree with the static disorder depth profile expected in both the as-implanted and the low temperature annealed samples. [S0031-9007(98)07270-6].
Static disorder depth profile in ion implanted materials by means of large angle convergent beam electron diffraction / Frabboni, Stefano; F., Gambetta. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - STAMPA. - 81:(1998), pp. 3155-3158.