Nanostructuring has opened new ways to increase the thermoelectric performance of a host of materials, mainly by decreasing their thermal conductivity κ while preserving the Seebeck coefficient S and electrical conductivity σ. The thermoelectric properties of degenerated polycrystalline silicon films with nanocavities (NCs) have been studied as a function of annealing temperature upon isochronous annealings in argon carried out every 50 °C in the range 500-1000°C which were used to modify the shape of the NCs. We found that presence of the NCs had no negative effect on the electronic properties of the system. The measured values of S and σ were close to those previously reported for the blank polycrystalline silicon films with the same doping level. The thermal conductivity was also found to be close to the value measured on the blank sample, about half of the reported value in polycrystals. This led to a power factor of 15.2 mWm -1K -2 and a figure of merit of 0.18 at 300 K.
Effect of Nanocavities on the Thermoelectric Properties of Polycrystalline Silicon / Ekaterina, Selezneva; Andrea, Arcari; Gilles, Pernot; Elisabetta, Romano; Gianfranco, Cerofolini; Rita, Tonini; Frabboni, Stefano; Giampiero, Ottaviani; Ali, Shakouri; Dario, Narducci. - ELETTRONICO. - 1329:(2011), pp. 95-100. (Intervento presentato al convegno 2011 MRS Spring Meeting tenutosi a S. Francisco nel 25 April 2011 through 29 April 2011) [10.1557/opl.2011.1465].