The principles of the convergent beam electron diffraction technique, which is a point-to-point method for local strain analysis of thin crystals in the transmission electron microscope, are briefly outlined. The availability in modern instruments of scanning attachments coupled with high-angle annular dark-field detectors (STEM/HAADF) has recently enabled the automatic acquisition of diffraction patterns ill a large number of points, selected by digitally rastering the probe in a two dimensional region of the sample. As the components of the strain tensor can be calculated at each point, 2D strain mapping has thus become possible. An example of application of the technique to deep sub-micron shallow-trench isolation structures in silicon is reported.

Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM / Armigliato, A; Balboni, R; Frabboni, Stefano. - In: THE EUROPEAN PHYSICAL JOURNAL. APPLIED PHYSICS. - ISSN 1286-0042. - STAMPA. - 27:1-3(2004), pp. 49-54. [10.1051/epjap:2004132]

Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM

FRABBONI, Stefano
2004

Abstract

The principles of the convergent beam electron diffraction technique, which is a point-to-point method for local strain analysis of thin crystals in the transmission electron microscope, are briefly outlined. The availability in modern instruments of scanning attachments coupled with high-angle annular dark-field detectors (STEM/HAADF) has recently enabled the automatic acquisition of diffraction patterns ill a large number of points, selected by digitally rastering the probe in a two dimensional region of the sample. As the components of the strain tensor can be calculated at each point, 2D strain mapping has thus become possible. An example of application of the technique to deep sub-micron shallow-trench isolation structures in silicon is reported.
2004
27
1-3
49
54
Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM / Armigliato, A; Balboni, R; Frabboni, Stefano. - In: THE EUROPEAN PHYSICAL JOURNAL. APPLIED PHYSICS. - ISSN 1286-0042. - STAMPA. - 27:1-3(2004), pp. 49-54. [10.1051/epjap:2004132]
Armigliato, A; Balboni, R; Frabboni, Stefano
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/4118
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