A method of obtaining quantitative two-dimensional (2D) maps of strain by the convergent beam electron diffraction technique in a transmission electron microscope is described. It is based on the automatic acquisition of a series of diffraction patterns generated from digital rastering the electron spot in a matrix of points within a selected area of the sample. These patterns are stored in a database and the corresponding strain tensor at each point is calculated, thus yielding a 2D strain map. An example of application of this method to cross-sectioned cells fabricated for the 0.15 mum technology of flash memories is reported.
Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices / A., Armigliato; R., Balboni; Gp, Carnevale; G., Pavia; D., Piccolo; Frabboni, Stefano; A., Benedetti; Ag, Cullis. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 82:13(2003), pp. 2172-2174. [10.1063/1.1565181]
Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices
FRABBONI, Stefano;
2003
Abstract
A method of obtaining quantitative two-dimensional (2D) maps of strain by the convergent beam electron diffraction technique in a transmission electron microscope is described. It is based on the automatic acquisition of a series of diffraction patterns generated from digital rastering the electron spot in a matrix of points within a selected area of the sample. These patterns are stored in a database and the corresponding strain tensor at each point is calculated, thus yielding a 2D strain map. An example of application of this method to cross-sectioned cells fabricated for the 0.15 mum technology of flash memories is reported.
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