BERTONI, Carlo Maria
 Distribuzione geografica
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Continente #
NA - Nord America 13.508
EU - Europa 4.946
AS - Asia 4.773
SA - Sud America 650
AF - Africa 42
Continente sconosciuto - Info sul continente non disponibili 10
OC - Oceania 7
Totale 23.936
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Nazione #
US - Stati Uniti d'America 13.423
GB - Regno Unito 2.166
CN - Cina 1.829
SG - Singapore 1.297
SE - Svezia 678
HK - Hong Kong 647
BR - Brasile 529
DE - Germania 433
IT - Italia 362
UA - Ucraina 345
TR - Turchia 324
FI - Finlandia 287
VN - Vietnam 280
RU - Federazione Russa 215
KR - Corea 171
BG - Bulgaria 125
FR - Francia 117
AR - Argentina 60
NL - Olanda 50
CA - Canada 46
IN - India 39
BE - Belgio 37
JP - Giappone 33
BD - Bangladesh 28
MX - Messico 28
PL - Polonia 26
IR - Iran 23
EC - Ecuador 22
ES - Italia 22
ID - Indonesia 22
IE - Irlanda 20
IQ - Iraq 19
LT - Lituania 16
ZA - Sudafrica 15
RO - Romania 11
EU - Europa 9
PY - Paraguay 9
AT - Austria 8
CL - Cile 8
PK - Pakistan 8
CO - Colombia 7
MY - Malesia 7
VE - Venezuela 7
MA - Marocco 6
KE - Kenya 5
KZ - Kazakistan 5
PH - Filippine 5
CH - Svizzera 4
DZ - Algeria 4
IL - Israele 4
NZ - Nuova Zelanda 4
PE - Perù 4
QA - Qatar 4
SA - Arabia Saudita 4
UZ - Uzbekistan 4
AE - Emirati Arabi Uniti 3
AU - Australia 3
AZ - Azerbaigian 3
BY - Bielorussia 3
BZ - Belize 3
CZ - Repubblica Ceca 3
HN - Honduras 3
JM - Giamaica 3
JO - Giordania 3
RS - Serbia 3
UY - Uruguay 3
AM - Armenia 2
AO - Angola 2
BA - Bosnia-Erzegovina 2
GH - Ghana 2
GR - Grecia 2
GT - Guatemala 2
MD - Moldavia 2
MK - Macedonia 2
PS - Palestinian Territory 2
PT - Portogallo 2
TN - Tunisia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AL - Albania 1
BO - Bolivia 1
BW - Botswana 1
CV - Capo Verde 1
CY - Cipro 1
EE - Estonia 1
EG - Egitto 1
KH - Cambogia 1
LB - Libano 1
LI - Liechtenstein 1
LK - Sri Lanka 1
ME - Montenegro 1
MG - Madagascar 1
NO - Norvegia 1
NP - Nepal 1
SN - Senegal 1
TJ - Tagikistan 1
TW - Taiwan 1
ZM - Zambia 1
Totale 23.936
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Città #
Fairfield 1.704
Southend 1.678
Santa Clara 1.301
Woodbridge 1.223
Houston 1.047
Ashburn 976
Hefei 830
Jacksonville 780
Singapore 770
Seattle 649
Hong Kong 646
Chandler 612
Cambridge 606
Wilmington 586
Ann Arbor 531
Dearborn 477
Nyköping 307
London 287
Beijing 236
Seoul 168
Modena 166
Izmir 165
Helsinki 155
Los Angeles 135
Princeton 130
Des Moines 127
San Diego 125
Sofia 123
Eugene 119
Council Bluffs 107
Ho Chi Minh City 105
Buffalo 101
New York 95
Chicago 69
The Dalles 59
Hanoi 56
Grafing 55
Moscow 52
Redwood City 50
São Paulo 49
Shanghai 46
San Mateo 44
Bremen 37
Brussels 37
Columbus 34
Dallas 33
Salt Lake City 32
Guangzhou 31
Augusta 26
Munich 26
Boardman 23
Nanjing 22
Tokyo 22
Kent 21
Dublin 20
Falls Church 19
Indiana 19
Milan 19
Jinan 18
Norwalk 18
Warsaw 18
Kunming 17
Haiphong 16
Leawood 16
Nanchang 16
Brooklyn 15
Kilburn 15
Montreal 14
San Francisco 14
Stockholm 14
Changsha 13
Paris 13
Rio de Janeiro 13
Turku 13
Wuhan 13
Ardabil 12
Ottawa 12
Philadelphia 12
Phoenix 12
Rome 12
Shenyang 12
Elk Grove Village 11
Verona 11
Campinas 10
Toronto 10
Zola Predosa 10
Auburn Hills 9
Bologna 9
Brasília 9
Chiswick 9
Da Nang 9
Hounslow 9
Tampa 9
Curitiba 8
Denver 8
Jakarta 8
Johannesburg 8
Mexico City 8
Monmouth Junction 8
Porto Alegre 8
Totale 18.467
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Nome #
A self-consistent calculation of the electronic structure of thin copper films 303
Ab initio calculation of adhesion and potential corrugation of diamond (001) interfaces 284
Topological properties of the bond-modulated honeycomb lattice 281
Electronic Structure of an Ordered Monolayer of Cu on Zn(0001) 270
Ab-initio calculation of the optical properties of silicon quantum wires 270
Italian family with two independent mutations:3358T/A in BRCA1 and 8756delA in BRCA2 genes. 270
Angle-resolved resonant inelastic x-ray scattering from transition-metal magnetic ions 269
Combined ab initio and kinetic Monte Carlo simulations of C diffusion on the root(3)X root(3) beta-SiC(111) surface 268
Absence of filled surface states in the s-p gap of clean (111) surface of Ag 266
First-Principle Molecular Dynamics of Sliding Diamond Surfaces: Tribochemical Reactions with Water and Load Effects 266
CHEMISORPTION GEOMETRY ON CLEAVED III-V SURFACES - CL ON GAAS, GASB, AND INSB 263
Ab initio Simulations of Homoepitaxial SiC Growth 262
A theoretical study of ordered monolayer films of Copper 259
Azimuthal Dependence of the Vibrational Excitation in Si(111)(2x1) 256
Interaction of Cl-2 molecules with GaAs(110) surface 254
Copper on Ni(111): the electron states from submonolayer to several monolayer coverages 253
Angular and polarization dependence of x-ray resonant elastic scattering in transition metals 252
Atomic and electronic structure of the cleaved 6H-SiC (11 2̄ 0) surface 251
First-principles study of Sb-stabilized GaSb(001) surface reconstructions 249
ADSORPTION OF MONO-VALENT METALS ON THE GaAs(110) SURFACE 249
Band structure calculation for GaAs and Si beyond the local density approximation 247
Atomic and electronic structure of the nonpolar GaN (1 1̄ 00) surface 247
Theoretical study of the electronic structure of GaP(110) 246
Sum rules for resonant inelastic x-ray scattering: Explicit form and angular dependence in perpendicular geometry 244
Acetylene on Si(111) from computer simulations 244
Azimuthal Dependence of Reflection High Resolution Electron Energy Loss of Si(111) (2x1) 241
Surface bands of the (001) surface of molybdenum 240
BRCA1 mutations and clinico-pathological features in a sample of italian women with early-onset breast cancer 239
Effects of chemical environment in the lineshape of Silicon LVV Auger spectra of Nickel Silicides 238
Polarization properties of (1-100) and (11-20) SiC surfaces from first principles 237
sp-d hybridization effects on the electronic structure of the (100) surface in Copper 234
A perturbative approach to the valence charge density in tetrahedrally bonded semiconductors 230
Topological invariants in interacting quantum spin Hall: a cluster perturbation theory approach 230
Surface-induced stacking transition at SiC(0001) 227
SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION OF THE ELECTRONIC-PROPERTIES OF THE INP (110) SURFACE 226
XPS surface analysis of monocrystalline silicon solar cells for manufacturing control 225
Image force effects in the barrier height for metal-metal tunneling electrons 225
Perturbative valence charge density of trigonal Se and Te 223
Quantum Description of the Matter-Radiation Interaction 223
First-principle study of ß-AlN thin films on ß-SiC(001) 219
ELECTRONIC-STRUCTURE AND ATOMIC CONFIGURATION AT CLEAVAGE SURFACE OF ZINCBLENDE COMPOUNDS 217
ELECTRON-STATES OF AN Sb-ORDERED OVERLAYER ON GaAs(110) 216
Chemisorption sites and reaction pathways for acetylene on Si(111)-(7x7) 214
Role of three-body interactions in the calculator of the total energy and the shear modulus of hexagonal metals 214
NONLOCAL EXCHANGE AND CORRELATION AND SEMICONDUCTOR BAND-STRUCTURE 214
Hydrogen covered Si(111) surfaces 213
Three-body forces in the lattice dynamics of Beryllium 213
Optical dichroism: E1-M1 integral relations 210
Angle resolved resonant inelastic X-ray scattering: intensity and dichroism from 3d transition metals in special geometries 209
Non-local exchange and correlation in the jellium model of surfaces 209
MICROSCOPIC ASPECTS OF SI-GE HETEROJUNCTION FORMATION 208
ELECTRON-STATES AT Zn(0001) SURFACE 207
Carbon induced restructuring of the Si(111) surface 206
Hydrogen adsorption on compound semiconductor surfaces 206
STRUCTURAL MODELS OF RECONSTRUCTED Si(110) SURFACE PHASES 206
Electronic structure of Si(111)-NiSi2(111) A-type and B-type interfaces 203
Density of states at the Si(111)-(2×1) surface: A study of the clean and H-covered surface 203
Dielectric screening matrix and lattice dynamics of Si 203
ELECTRONIC-PROPERTIES OF THE Cs-GaAs(110) INTERFACE AT MONOLAYER COVERAGE 202
Image potential at metal surfaces 201
DIRECT EVIDENCE FOR D-BAND INVOLVEMENT IN THE TISE2 PHASE-TRANSITION 199
Study of arsenic for antimony exchange at the Sb-stabilized GaSb(0 0 1) surface 199
EVIDENCE FOR SEMICONDUCTOR-SEMICONDUCTOR INTERFACE STATES - SI(111) (2X1)-GE 197
PHOTOEMISSION STUDIES OF HETEROJUNCTION INTERFACE FORMATION - GE-GAAS(110) AND GE-SI(111) 196
Surface vibration at clean and hydrogenated GaAs(110) from ab-intio molecular-dynamics 195
THEORETICAL INVESTIGATION OF HYDROGEN CHEMISORPTION ON GA-CONTAINING III-V-COMPOUNDS 195
Dielectric matrix and phonon frequencies in Silicon 193
Ab initio investigation of the adsorption of organic molecules at Si(111) and Si(100) surfaces 193
THE ELECTRONIC-STRUCTURE OF GALLIUM NITRIDE 191
Theoretical study of the electronic structure of the GaP-Si(110) interface 190
Density-of-states changes near the Fermi level and the lattice instability in TiSe_2 190
Valence Charge Density in Aluminum 188
Chemisorption geometry on cleaved GaAs (110) surfaces 188
Resonant inelastic X-ray scattering from magnetic systems: Mn in MnFe2O4 187
Two dimensional band structure of chemisorbed chlorine on GaAs(110) 187
The phonon spectra of LiH and LiD from density-functional perturbation theory 186
SIMPLE METAL-SURFACES AND IMAGE POTENTIAL STATES 185
Electronic Structure of cubic GaN with Self-Energy Corrections 184
THE ELECTRONIC-PROPERTIES OF SI-NISI2(111) EPITAXIAL INTERFACES 183
Third order perturbation theory and lattice dynamics of simple metals 181
Surface electronic states at the (110) surfaces of III-V compounds 179
Linear-Combination-of-Atomic-Orbital description of the electron states at the (0001) surfaces of hexagonal-close-packed metals 177
CHEMICAL ORDER IN AMORPHOUS COVALENT ALLOYS - A THEORETICAL-STUDY OF A-SiC 177
Kinetic Monte Carlo simulations of C diffusion on √3 × √3 β-SiC(111) based on ab initio calculations 176
Chapter 4 Electronic structure of adsorbates on surfaces. Adsorption on semiconductors 176
Image plane for surface potential 174
Confinement and passivation in isolated and coupled silicon quantum wires 173
Thermodynamic Properties of Alkali Metals 173
Surface electron states at the (110) surfaces of III-V semiconductors 172
The electonic structure of the (100) surface of Copper 172
The Vacancy Formation Energy for Zirconium. 172
Surface bands of Ga containing III-V compounds 170
Surface bands in relaxed cleavage surface of GaP 165
Density functional calculation of atomic structure with non-local exchange and correlation 165
First-principle simulations of molecular processes at semiconductor surfaces 165
Calculation of the electronic properties of simple metal surfaces through lateral averaged pseudopotential 165
Dielectric matrix and covalent charge distribution of silicon 165
Electron density profiles at charged metal surfaces in the weighted density approximation 164
Surface effects in GaN growth 164
Radiation-matter interaction: Absoption, Photoemission, Scattering. 158
Totale 21.363
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Categoria #
all - tutte 91.759
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 91.759
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.682 0 0 0 0 0 191 251 354 154 331 276 125
2021/20222.191 30 331 322 131 42 160 198 77 200 131 341 228
2022/20231.842 221 166 152 133 196 379 30 189 226 7 79 64
2023/20241.038 52 59 48 236 200 83 83 79 31 16 48 103
2024/20254.396 151 49 52 236 933 653 179 234 392 328 488 701
2025/20263.416 501 531 792 791 593 208 0 0 0 0 0 0
Totale 24.052