BERTONI, Carlo Maria
 Distribuzione geografica
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Continente #
NA - Nord America 16.617
AS - Asia 6.212
EU - Europa 5.419
SA - Sud America 864
Continente sconosciuto - Info sul continente non disponibili 127
AF - Africa 86
OC - Oceania 8
Totale 29.333
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Nazione #
US - Stati Uniti d'America 16.363
GB - Regno Unito 2.192
CN - Cina 1.978
SG - Singapore 1.766
HK - Hong Kong 706
SE - Svezia 678
BR - Brasile 662
VN - Vietnam 646
IT - Italia 564
DE - Germania 456
UA - Ucraina 357
TR - Turchia 338
FI - Finlandia 332
FR - Francia 226
RU - Federazione Russa 221
KR - Corea 192
BD - Bangladesh 153
CA - Canada 142
BG - Bulgaria 129
IN - India 102
AR - Argentina 80
NL - Olanda 54
IQ - Iraq 52
MX - Messico 52
JP - Giappone 45
BE - Belgio 37
ES - Italia 33
ID - Indonesia 32
EC - Ecuador 31
PL - Polonia 28
PK - Pakistan 26
IR - Iran 23
VE - Venezuela 23
IE - Irlanda 21
ZA - Sudafrica 20
CL - Cile 19
CO - Colombia 19
MY - Malesia 17
SA - Arabia Saudita 17
AE - Emirati Arabi Uniti 16
LT - Lituania 16
PH - Filippine 15
RO - Romania 15
MA - Marocco 14
DZ - Algeria 12
HN - Honduras 12
PY - Paraguay 12
UZ - Uzbekistan 12
JM - Giamaica 11
AT - Austria 9
CR - Costa Rica 9
EU - Europa 9
IL - Israele 9
KE - Kenya 9
BO - Bolivia 8
KZ - Kazakistan 8
QA - Qatar 7
CH - Svizzera 6
JO - Giordania 6
AL - Albania 5
AZ - Azerbaigian 5
BY - Bielorussia 5
EG - Egitto 5
GT - Guatemala 5
NP - Nepal 5
PE - Perù 5
RS - Serbia 5
UY - Uruguay 5
AU - Australia 4
BA - Bosnia-Erzegovina 4
CZ - Repubblica Ceca 4
DO - Repubblica Dominicana 4
KG - Kirghizistan 4
NI - Nicaragua 4
NZ - Nuova Zelanda 4
OM - Oman 4
PS - Palestinian Territory 4
PT - Portogallo 4
TH - Thailandia 4
TN - Tunisia 4
TW - Taiwan 4
BZ - Belize 3
EE - Estonia 3
MD - Moldavia 3
NG - Nigeria 3
PR - Porto Rico 3
SV - El Salvador 3
AM - Armenia 2
AO - Angola 2
CI - Costa d'Avorio 2
CY - Cipro 2
ET - Etiopia 2
GH - Ghana 2
GR - Grecia 2
KH - Cambogia 2
LB - Libano 2
LK - Sri Lanka 2
MK - Macedonia 2
MN - Mongolia 2
NO - Norvegia 2
Totale 29.188
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Città #
Ashburn 1.793
Fairfield 1.705
Southend 1.678
Santa Clara 1.402
Woodbridge 1.223
Singapore 1.070
Houston 1.052
Hefei 830
Jacksonville 784
Hong Kong 693
Seattle 656
Chandler 612
Cambridge 607
Wilmington 588
San Jose 568
Ann Arbor 532
Dearborn 477
Council Bluffs 313
Nyköping 307
London 290
Beijing 279
Ho Chi Minh City 199
Helsinki 198
Los Angeles 191
Seoul 187
Modena 166
Izmir 165
The Dalles 164
Hanoi 153
Princeton 130
San Diego 130
Des Moines 127
Sofia 125
Chicago 120
Eugene 119
New York 117
Buffalo 115
Lauterbourg 93
Milan 85
São Paulo 79
Columbus 71
Grafing 55
Dallas 54
Moscow 52
Redwood City 50
Shanghai 46
San Mateo 44
Phoenix 41
Salt Lake City 40
Bremen 37
Brussels 37
Guangzhou 35
Haiphong 33
Toronto 33
Orem 31
Augusta 27
Da Nang 26
Munich 26
Tokyo 26
Boardman 25
San Francisco 24
Nanjing 23
Kent 22
Miano 22
Montreal 22
Dublin 20
Falls Church 20
Frankfurt am Main 20
Rome 20
Tampa 20
Baghdad 19
Brantford 19
Brooklyn 19
Indiana 19
Philadelphia 19
Warsaw 19
Washington 19
Jinan 18
Kunming 18
Norwalk 18
Rio de Janeiro 18
Mumbai 17
Leawood 16
Nanchang 16
Ottawa 16
Atlanta 15
Kilburn 15
Paris 15
Changsha 14
Elk Grove Village 14
Mexico City 14
Porto Alegre 14
Stockholm 14
Wuhan 14
Belo Horizonte 13
Denver 13
Newark 13
Turku 13
Ardabil 12
Brasília 12
Totale 21.599
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Nome #
Italian family with two independent mutations:3358T/A in BRCA1 and 8756delA in BRCA2 genes. 364
A self-consistent calculation of the electronic structure of thin copper films 357
Combined ab initio and kinetic Monte Carlo simulations of C diffusion on the root(3)X root(3) beta-SiC(111) surface 335
Azimuthal Dependence of the Vibrational Excitation in Si(111)(2x1) 328
Ab initio calculation of adhesion and potential corrugation of diamond (001) interfaces 326
CHEMISORPTION GEOMETRY ON CLEAVED III-V SURFACES - CL ON GAAS, GASB, AND INSB 324
Angle-resolved resonant inelastic x-ray scattering from transition-metal magnetic ions 322
A theoretical study of ordered monolayer films of Copper 322
Ab-initio calculation of the optical properties of silicon quantum wires 320
Ab initio Simulations of Homoepitaxial SiC Growth 317
Absence of filled surface states in the s-p gap of clean (111) surface of Ag 316
Electronic Structure of an Ordered Monolayer of Cu on Zn(0001) 316
First-Principle Molecular Dynamics of Sliding Diamond Surfaces: Tribochemical Reactions with Water and Load Effects 314
Atomic and electronic structure of the cleaved 6H-SiC (11 2̄ 0) surface 311
Azimuthal Dependence of Reflection High Resolution Electron Energy Loss of Si(111) (2x1) 310
Topological properties of the bond-modulated honeycomb lattice 309
Atomic and electronic structure of the nonpolar GaN (1 1̄ 00) surface 306
Theoretical study of the electronic structure of GaP(110) 305
Acetylene on Si(111) from computer simulations 303
ADSORPTION OF MONO-VALENT METALS ON THE GaAs(110) SURFACE 303
Copper on Ni(111): the electron states from submonolayer to several monolayer coverages 302
BRCA1 mutations and clinico-pathological features in a sample of italian women with early-onset breast cancer 300
Band structure calculation for GaAs and Si beyond the local density approximation 299
Angular and polarization dependence of x-ray resonant elastic scattering in transition metals 296
Polarization properties of (1-100) and (11-20) SiC surfaces from first principles 293
First-principles study of Sb-stabilized GaSb(001) surface reconstructions 291
Interaction of Cl-2 molecules with GaAs(110) surface 291
Surface bands of the (001) surface of molybdenum 290
Sum rules for resonant inelastic x-ray scattering: Explicit form and angular dependence in perpendicular geometry 289
A perturbative approach to the valence charge density in tetrahedrally bonded semiconductors 284
Effects of chemical environment in the lineshape of Silicon LVV Auger spectra of Nickel Silicides 283
sp-d hybridization effects on the electronic structure of the (100) surface in Copper 276
Topological invariants in interacting quantum spin Hall: a cluster perturbation theory approach 271
Surface-induced stacking transition at SiC(0001) 269
Dielectric screening matrix and lattice dynamics of Si 269
Image force effects in the barrier height for metal-metal tunneling electrons 268
Quantum Description of the Matter-Radiation Interaction 268
SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION OF THE ELECTRONIC-PROPERTIES OF THE INP (110) SURFACE 263
XPS surface analysis of monocrystalline silicon solar cells for manufacturing control 259
Three-body forces in the lattice dynamics of Beryllium 259
NONLOCAL EXCHANGE AND CORRELATION AND SEMICONDUCTOR BAND-STRUCTURE 259
First-principle study of ß-AlN thin films on ß-SiC(001) 257
ELECTRONIC-STRUCTURE AND ATOMIC CONFIGURATION AT CLEAVAGE SURFACE OF ZINCBLENDE COMPOUNDS 257
Perturbative valence charge density of trigonal Se and Te 256
Hydrogen covered Si(111) surfaces 255
Chemisorption sites and reaction pathways for acetylene on Si(111)-(7x7) 254
Angle resolved resonant inelastic X-ray scattering: intensity and dichroism from 3d transition metals in special geometries 252
Study of arsenic for antimony exchange at the Sb-stabilized GaSb(0 0 1) surface 251
STRUCTURAL MODELS OF RECONSTRUCTED Si(110) SURFACE PHASES 251
Non-local exchange and correlation in the jellium model of surfaces 251
Optical dichroism: E1-M1 integral relations 248
Dielectric matrix and phonon frequencies in Silicon 248
ELECTRON-STATES AT Zn(0001) SURFACE 247
Ab initio investigation of the adsorption of organic molecules at Si(111) and Si(100) surfaces 247
ELECTRON-STATES OF AN Sb-ORDERED OVERLAYER ON GaAs(110) 247
Role of three-body interactions in the calculator of the total energy and the shear modulus of hexagonal metals 245
MICROSCOPIC ASPECTS OF SI-GE HETEROJUNCTION FORMATION 241
High prevalence of adenomas and microadenomas of the duodenal papilla and periampullar region in patients with FAP 240
Carbon induced restructuring of the Si(111) surface 237
Image potential at metal surfaces 237
Hydrogen adsorption on compound semiconductor surfaces 236
THEORETICAL INVESTIGATION OF HYDROGEN CHEMISORPTION ON GA-CONTAINING III-V-COMPOUNDS 235
ELECTRONIC-PROPERTIES OF THE Cs-GaAs(110) INTERFACE AT MONOLAYER COVERAGE 234
Surface vibration at clean and hydrogenated GaAs(110) from ab-intio molecular-dynamics 233
DIRECT EVIDENCE FOR D-BAND INVOLVEMENT IN THE TISE2 PHASE-TRANSITION 232
Electronic Structure of cubic GaN with Self-Energy Corrections 231
Electronic structure of Si(111)-NiSi2(111) A-type and B-type interfaces 230
Density of states at the Si(111)-(2×1) surface: A study of the clean and H-covered surface 230
Calculation of the electronic properties of simple metal surfaces through lateral averaged pseudopotential 230
Linear-Combination-of-Atomic-Orbital description of the electron states at the (0001) surfaces of hexagonal-close-packed metals 229
Surface bands of Ga containing III-V compounds 228
Chemisorption geometry on cleaved GaAs (110) surfaces 228
Resonant inelastic X-ray scattering from magnetic systems: Mn in MnFe2O4 225
Third order perturbation theory and lattice dynamics of simple metals 225
The electonic structure of the (100) surface of Copper 224
THE ELECTRONIC-STRUCTURE OF GALLIUM NITRIDE 224
Valence Charge Density in Aluminum 223
Density-of-states changes near the Fermi level and the lattice instability in TiSe_2 223
PHOTOEMISSION STUDIES OF HETEROJUNCTION INTERFACE FORMATION - GE-GAAS(110) AND GE-SI(111) 221
SIMPLE METAL-SURFACES AND IMAGE POTENTIAL STATES 219
EVIDENCE FOR SEMICONDUCTOR-SEMICONDUCTOR INTERFACE STATES - SI(111) (2X1)-GE 218
The phonon spectra of LiH and LiD from density-functional perturbation theory 217
Two dimensional band structure of chemisorbed chlorine on GaAs(110) 217
Kinetic Monte Carlo simulations of C diffusion on √3 × √3 β-SiC(111) based on ab initio calculations 216
Surface electronic states at the (110) surfaces of III-V compounds 216
Confinement and passivation in isolated and coupled silicon quantum wires 215
Theoretical study of the electronic structure of the GaP-Si(110) interface 215
Density functional calculation of atomic structure with non-local exchange and correlation 214
CHEMICAL ORDER IN AMORPHOUS COVALENT ALLOYS - A THEORETICAL-STUDY OF A-SiC 211
Perturbative theory and tree-body forces in h.c.p. metals 210
Thermodynamic Properties of Alkali Metals 210
Image plane for surface potential 209
First-principle simulations of molecular processes at semiconductor surfaces 208
THE ELECTRONIC-PROPERTIES OF SI-NISI2(111) EPITAXIAL INTERFACES 207
Magnetic circular dichroism in resonant x-ray emission from impurities: Results at the L-2,(3) edges of Mn in Ni 205
Surface bands in relaxed cleavage surface of GaP 205
Chapter 4 Electronic structure of adsorbates on surfaces. Adsorption on semiconductors 205
Surface electron states at the (110) surfaces of III-V semiconductors 204
The Vacancy Formation Energy for Zirconium. 201
Dielectric matrix and covalent charge distribution of silicon 200
Totale 25.771
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Categoria #
all - tutte 111.041
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 111.041
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.508 0 0 0 131 42 160 198 77 200 131 341 228
2022/20231.842 221 166 152 133 196 379 30 189 226 7 79 64
2023/20241.038 52 59 48 236 200 83 83 79 31 16 48 103
2024/20254.396 151 49 52 236 933 653 179 234 392 328 488 701
2025/20266.811 501 531 792 791 593 581 681 345 651 623 437 285
2026/20271.886 271 443 678 494 0 0 0 0 0 0 0 0
Totale 29.333