BERTONI, Carlo Maria
 Distribuzione geografica
Continente #
NA - Nord America 15.492
AS - Asia 6.204
EU - Europa 5.378
SA - Sud America 836
Continente sconosciuto - Info sul continente non disponibili 127
AF - Africa 85
OC - Oceania 8
Totale 28.130
Nazione #
US - Stati Uniti d'America 15.283
GB - Regno Unito 2.179
CN - Cina 1.978
SG - Singapore 1.765
HK - Hong Kong 706
SE - Svezia 678
VN - Vietnam 645
BR - Brasile 636
IT - Italia 540
DE - Germania 456
UA - Ucraina 357
TR - Turchia 338
FI - Finlandia 332
FR - Francia 225
RU - Federazione Russa 220
KR - Corea 192
BD - Bangladesh 150
BG - Bulgaria 129
CA - Canada 111
IN - India 102
AR - Argentina 80
NL - Olanda 54
IQ - Iraq 52
MX - Messico 51
JP - Giappone 45
BE - Belgio 37
ES - Italia 33
ID - Indonesia 32
EC - Ecuador 30
PL - Polonia 28
PK - Pakistan 25
IR - Iran 23
VE - Venezuela 22
IE - Irlanda 21
ZA - Sudafrica 20
CL - Cile 19
CO - Colombia 19
MY - Malesia 17
AE - Emirati Arabi Uniti 16
LT - Lituania 16
SA - Arabia Saudita 16
PH - Filippine 15
RO - Romania 15
MA - Marocco 14
DZ - Algeria 12
PY - Paraguay 12
UZ - Uzbekistan 11
HN - Honduras 10
AT - Austria 9
EU - Europa 9
IL - Israele 9
JM - Giamaica 9
KE - Kenya 9
BO - Bolivia 8
KZ - Kazakistan 8
CR - Costa Rica 7
QA - Qatar 7
CH - Svizzera 6
JO - Giordania 6
AL - Albania 5
AZ - Azerbaigian 5
BY - Bielorussia 5
EG - Egitto 5
NP - Nepal 5
PE - Perù 5
RS - Serbia 5
UY - Uruguay 5
AU - Australia 4
BA - Bosnia-Erzegovina 4
CZ - Repubblica Ceca 4
DO - Repubblica Dominicana 4
GT - Guatemala 4
KG - Kirghizistan 4
NZ - Nuova Zelanda 4
OM - Oman 4
PS - Palestinian Territory 4
PT - Portogallo 4
TH - Thailandia 4
TN - Tunisia 4
TW - Taiwan 4
BZ - Belize 3
MD - Moldavia 3
NG - Nigeria 3
NI - Nicaragua 3
AM - Armenia 2
AO - Angola 2
CI - Costa d'Avorio 2
CY - Cipro 2
ET - Etiopia 2
GH - Ghana 2
GR - Grecia 2
KH - Cambogia 2
LB - Libano 2
LK - Sri Lanka 2
MK - Macedonia 2
MN - Mongolia 2
NO - Norvegia 2
PR - Porto Rico 2
SK - Slovacchia (Repubblica Slovacca) 2
SN - Senegal 2
Totale 27.990
Città #
Fairfield 1.704
Southend 1.678
Santa Clara 1.392
Ashburn 1.390
Woodbridge 1.223
Singapore 1.070
Houston 1.051
Hefei 830
Jacksonville 782
Hong Kong 693
Seattle 652
Chandler 612
Cambridge 606
Wilmington 588
Ann Arbor 532
Dearborn 477
San Jose 429
Nyköping 307
London 288
Beijing 279
Council Bluffs 276
Helsinki 198
Ho Chi Minh City 198
Seoul 187
Los Angeles 176
Modena 166
Izmir 165
The Dalles 164
Hanoi 153
Princeton 130
San Diego 130
Des Moines 127
Sofia 125
Eugene 119
New York 109
Buffalo 108
Chicago 106
Lauterbourg 93
Milan 82
Columbus 71
Grafing 55
São Paulo 55
Moscow 52
Redwood City 50
Shanghai 46
San Mateo 44
Dallas 41
Salt Lake City 39
Bremen 37
Brussels 37
Guangzhou 35
Haiphong 33
Orem 31
Phoenix 28
Augusta 27
Da Nang 26
Munich 26
Tokyo 26
Boardman 25
Nanjing 23
Kent 22
Miano 22
Dublin 20
Falls Church 20
Frankfurt am Main 20
Montreal 20
San Francisco 20
Baghdad 19
Brantford 19
Indiana 19
Tampa 19
Warsaw 19
Jinan 18
Kunming 18
Norwalk 18
Rio de Janeiro 18
Toronto 18
Brooklyn 17
Mumbai 17
Philadelphia 17
Rome 17
Leawood 16
Nanchang 16
Kilburn 15
Washington 15
Changsha 14
Mexico City 14
Ottawa 14
Paris 14
Stockholm 14
Wuhan 14
Atlanta 13
Belo Horizonte 13
Elk Grove Village 13
Porto Alegre 13
Turku 13
Ardabil 12
Brasília 12
Denver 12
Shenyang 12
Totale 20.858
Nome #
Italian family with two independent mutations:3358T/A in BRCA1 and 8756delA in BRCA2 genes. 356
A self-consistent calculation of the electronic structure of thin copper films 352
Ab initio calculation of adhesion and potential corrugation of diamond (001) interfaces 322
Azimuthal Dependence of the Vibrational Excitation in Si(111)(2x1) 320
Combined ab initio and kinetic Monte Carlo simulations of C diffusion on the root(3)X root(3) beta-SiC(111) surface 318
Ab-initio calculation of the optical properties of silicon quantum wires 315
Angle-resolved resonant inelastic x-ray scattering from transition-metal magnetic ions 311
Electronic Structure of an Ordered Monolayer of Cu on Zn(0001) 310
Ab initio Simulations of Homoepitaxial SiC Growth 310
Absence of filled surface states in the s-p gap of clean (111) surface of Ag 308
A theoretical study of ordered monolayer films of Copper 306
First-Principle Molecular Dynamics of Sliding Diamond Surfaces: Tribochemical Reactions with Water and Load Effects 305
CHEMISORPTION GEOMETRY ON CLEAVED III-V SURFACES - CL ON GAAS, GASB, AND INSB 305
Topological properties of the bond-modulated honeycomb lattice 302
ADSORPTION OF MONO-VALENT METALS ON THE GaAs(110) SURFACE 299
Atomic and electronic structure of the cleaved 6H-SiC (11 2̄ 0) surface 299
Acetylene on Si(111) from computer simulations 298
Azimuthal Dependence of Reflection High Resolution Electron Energy Loss of Si(111) (2x1) 298
Atomic and electronic structure of the nonpolar GaN (1 1̄ 00) surface 297
Theoretical study of the electronic structure of GaP(110) 296
Band structure calculation for GaAs and Si beyond the local density approximation 295
Copper on Ni(111): the electron states from submonolayer to several monolayer coverages 291
Angular and polarization dependence of x-ray resonant elastic scattering in transition metals 289
First-principles study of Sb-stabilized GaSb(001) surface reconstructions 286
Interaction of Cl-2 molecules with GaAs(110) surface 286
BRCA1 mutations and clinico-pathological features in a sample of italian women with early-onset breast cancer 286
Sum rules for resonant inelastic x-ray scattering: Explicit form and angular dependence in perpendicular geometry 281
Surface bands of the (001) surface of molybdenum 281
A perturbative approach to the valence charge density in tetrahedrally bonded semiconductors 276
Polarization properties of (1-100) and (11-20) SiC surfaces from first principles 275
sp-d hybridization effects on the electronic structure of the (100) surface in Copper 269
Effects of chemical environment in the lineshape of Silicon LVV Auger spectra of Nickel Silicides 269
Topological invariants in interacting quantum spin Hall: a cluster perturbation theory approach 265
Dielectric screening matrix and lattice dynamics of Si 262
Surface-induced stacking transition at SiC(0001) 261
SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION OF THE ELECTRONIC-PROPERTIES OF THE INP (110) SURFACE 260
Image force effects in the barrier height for metal-metal tunneling electrons 259
Quantum Description of the Matter-Radiation Interaction 259
XPS surface analysis of monocrystalline silicon solar cells for manufacturing control 252
Perturbative valence charge density of trigonal Se and Te 251
NONLOCAL EXCHANGE AND CORRELATION AND SEMICONDUCTOR BAND-STRUCTURE 250
Chemisorption sites and reaction pathways for acetylene on Si(111)-(7x7) 249
First-principle study of ß-AlN thin films on ß-SiC(001) 249
Three-body forces in the lattice dynamics of Beryllium 249
ELECTRONIC-STRUCTURE AND ATOMIC CONFIGURATION AT CLEAVAGE SURFACE OF ZINCBLENDE COMPOUNDS 248
STRUCTURAL MODELS OF RECONSTRUCTED Si(110) SURFACE PHASES 246
Hydrogen covered Si(111) surfaces 245
Study of arsenic for antimony exchange at the Sb-stabilized GaSb(0 0 1) surface 245
Non-local exchange and correlation in the jellium model of surfaces 241
Optical dichroism: E1-M1 integral relations 240
Role of three-body interactions in the calculator of the total energy and the shear modulus of hexagonal metals 240
Angle resolved resonant inelastic X-ray scattering: intensity and dichroism from 3d transition metals in special geometries 240
Ab initio investigation of the adsorption of organic molecules at Si(111) and Si(100) surfaces 240
ELECTRON-STATES OF AN Sb-ORDERED OVERLAYER ON GaAs(110) 240
ELECTRON-STATES AT Zn(0001) SURFACE 239
MICROSCOPIC ASPECTS OF SI-GE HETEROJUNCTION FORMATION 238
Dielectric matrix and phonon frequencies in Silicon 237
Carbon induced restructuring of the Si(111) surface 231
Image potential at metal surfaces 231
THEORETICAL INVESTIGATION OF HYDROGEN CHEMISORPTION ON GA-CONTAINING III-V-COMPOUNDS 231
Hydrogen adsorption on compound semiconductor surfaces 230
DIRECT EVIDENCE FOR D-BAND INVOLVEMENT IN THE TISE2 PHASE-TRANSITION 229
ELECTRONIC-PROPERTIES OF THE Cs-GaAs(110) INTERFACE AT MONOLAYER COVERAGE 228
Surface vibration at clean and hydrogenated GaAs(110) from ab-intio molecular-dynamics 226
Electronic structure of Si(111)-NiSi2(111) A-type and B-type interfaces 225
Density of states at the Si(111)-(2×1) surface: A study of the clean and H-covered surface 224
Resonant inelastic X-ray scattering from magnetic systems: Mn in MnFe2O4 221
Electronic Structure of cubic GaN with Self-Energy Corrections 220
THE ELECTRONIC-STRUCTURE OF GALLIUM NITRIDE 220
Density-of-states changes near the Fermi level and the lattice instability in TiSe_2 218
PHOTOEMISSION STUDIES OF HETEROJUNCTION INTERFACE FORMATION - GE-GAAS(110) AND GE-SI(111) 217
Third order perturbation theory and lattice dynamics of simple metals 217
Valence Charge Density in Aluminum 215
Chemisorption geometry on cleaved GaAs (110) surfaces 215
EVIDENCE FOR SEMICONDUCTOR-SEMICONDUCTOR INTERFACE STATES - SI(111) (2X1)-GE 214
Linear-Combination-of-Atomic-Orbital description of the electron states at the (0001) surfaces of hexagonal-close-packed metals 211
SIMPLE METAL-SURFACES AND IMAGE POTENTIAL STATES 211
Theoretical study of the electronic structure of the GaP-Si(110) interface 211
Kinetic Monte Carlo simulations of C diffusion on √3 × √3 β-SiC(111) based on ab initio calculations 210
Surface bands of Ga containing III-V compounds 209
Surface electronic states at the (110) surfaces of III-V compounds 209
Two dimensional band structure of chemisorbed chlorine on GaAs(110) 209
The phonon spectra of LiH and LiD from density-functional perturbation theory 208
Density functional calculation of atomic structure with non-local exchange and correlation 208
Confinement and passivation in isolated and coupled silicon quantum wires 205
Image plane for surface potential 204
THE ELECTRONIC-PROPERTIES OF SI-NISI2(111) EPITAXIAL INTERFACES 204
CHEMICAL ORDER IN AMORPHOUS COVALENT ALLOYS - A THEORETICAL-STUDY OF A-SiC 204
Thermodynamic Properties of Alkali Metals 202
Chapter 4 Electronic structure of adsorbates on surfaces. Adsorption on semiconductors 200
Surface electron states at the (110) surfaces of III-V semiconductors 198
Surface bands in relaxed cleavage surface of GaP 196
High prevalence of adenomas and microadenomas of the duodenal papilla and periampullar region in patients with FAP 196
The electonic structure of the (100) surface of Copper 196
Magnetic circular dichroism in resonant x-ray emission from impurities: Results at the L-2,(3) edges of Mn in Ni 193
The Vacancy Formation Energy for Zirconium. 192
First-principle simulations of molecular processes at semiconductor surfaces 191
Calculation of the electronic properties of simple metal surfaces through lateral averaged pseudopotential 190
Electron density profiles at charged metal surfaces in the weighted density approximation 189
Surface effects in GaN growth 187
Totale 24.861
Categoria #
all - tutte 106.947
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 106.947


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.161 0 331 322 131 42 160 198 77 200 131 341 228
2022/20231.842 221 166 152 133 196 379 30 189 226 7 79 64
2023/20241.038 52 59 48 236 200 83 83 79 31 16 48 103
2024/20254.396 151 49 52 236 933 653 179 234 392 328 488 701
2025/20266.811 501 531 792 791 593 581 681 345 651 623 437 285
2026/2027683 271 412 0 0 0 0 0 0 0 0 0 0
Totale 28.130