BERTONI, Carlo Maria
 Distribuzione geografica
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Continente #
NA - Nord America 13.739
EU - Europa 4.950
AS - Asia 4.880
SA - Sud America 665
AF - Africa 44
Continente sconosciuto - Info sul continente non disponibili 10
OC - Oceania 7
Totale 24.295
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Nazione #
US - Stati Uniti d'America 13.650
GB - Regno Unito 2.167
CN - Cina 1.851
SG - Singapore 1.369
SE - Svezia 678
HK - Hong Kong 647
BR - Brasile 541
DE - Germania 433
IT - Italia 363
UA - Ucraina 346
TR - Turchia 326
FI - Finlandia 287
VN - Vietnam 283
RU - Federazione Russa 215
KR - Corea 171
BG - Bulgaria 125
FR - Francia 118
AR - Argentina 61
NL - Olanda 50
CA - Canada 47
IN - India 40
BE - Belgio 37
JP - Giappone 35
MX - Messico 29
BD - Bangladesh 28
PL - Polonia 26
EC - Ecuador 23
IR - Iran 23
ES - Italia 22
ID - Indonesia 22
IQ - Iraq 21
IE - Irlanda 20
LT - Lituania 16
ZA - Sudafrica 16
RO - Romania 11
CL - Cile 9
EU - Europa 9
PY - Paraguay 9
AT - Austria 8
PK - Pakistan 8
CO - Colombia 7
MA - Marocco 7
MY - Malesia 7
VE - Venezuela 7
KE - Kenya 5
KZ - Kazakistan 5
PH - Filippine 5
SA - Arabia Saudita 5
UZ - Uzbekistan 5
CH - Svizzera 4
DZ - Algeria 4
IL - Israele 4
JM - Giamaica 4
NZ - Nuova Zelanda 4
PE - Perù 4
QA - Qatar 4
AE - Emirati Arabi Uniti 3
AU - Australia 3
AZ - Azerbaigian 3
BY - Bielorussia 3
BZ - Belize 3
CZ - Repubblica Ceca 3
GT - Guatemala 3
HN - Honduras 3
JO - Giordania 3
RS - Serbia 3
UY - Uruguay 3
AM - Armenia 2
AO - Angola 2
BA - Bosnia-Erzegovina 2
GH - Ghana 2
GR - Grecia 2
LK - Sri Lanka 2
MD - Moldavia 2
MK - Macedonia 2
PS - Palestinian Territory 2
PT - Portogallo 2
TN - Tunisia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AL - Albania 1
BO - Bolivia 1
BW - Botswana 1
CV - Capo Verde 1
CY - Cipro 1
EE - Estonia 1
EG - Egitto 1
KH - Cambogia 1
LB - Libano 1
LI - Liechtenstein 1
ME - Montenegro 1
MG - Madagascar 1
NO - Norvegia 1
NP - Nepal 1
SN - Senegal 1
TJ - Tagikistan 1
TW - Taiwan 1
ZM - Zambia 1
Totale 24.295
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Città #
Fairfield 1.704
Southend 1.678
Santa Clara 1.302
Woodbridge 1.223
Houston 1.049
Ashburn 983
Hefei 830
Singapore 822
Jacksonville 782
Seattle 650
Hong Kong 646
Chandler 612
Cambridge 606
Wilmington 586
Ann Arbor 532
Dearborn 477
Nyköping 307
London 287
Beijing 237
Seoul 168
Modena 166
Izmir 165
Helsinki 155
Los Angeles 151
Princeton 130
Des Moines 127
San Diego 125
Sofia 123
Eugene 119
Council Bluffs 107
Ho Chi Minh City 105
Buffalo 101
New York 100
Chicago 95
The Dalles 68
Hanoi 58
Grafing 55
Moscow 52
São Paulo 51
Redwood City 50
Shanghai 46
San Mateo 44
Salt Lake City 39
Bremen 37
Brussels 37
Columbus 34
Dallas 34
Guangzhou 31
Augusta 26
Munich 26
Tokyo 24
Boardman 23
Nanjing 23
Kent 21
Dublin 20
Falls Church 19
Indiana 19
Milan 19
Jinan 18
Kunming 18
Norwalk 18
Tampa 18
Warsaw 18
Brooklyn 17
Phoenix 17
Haiphong 16
Leawood 16
Nanchang 16
San Jose 16
Kilburn 15
Changsha 14
Montreal 14
Philadelphia 14
San Francisco 14
Stockholm 14
Wuhan 14
Elk Grove Village 13
Paris 13
Rio de Janeiro 13
Turku 13
Ardabil 12
Ottawa 12
Rome 12
Shenyang 12
Campinas 11
Orem 11
Verona 11
Toronto 10
Zola Predosa 10
Auburn Hills 9
Bologna 9
Brasília 9
Chiswick 9
Da Nang 9
Detroit 9
Hounslow 9
Johannesburg 9
Atlanta 8
Chengdu 8
Curitiba 8
Totale 18.642
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Nome #
A self-consistent calculation of the electronic structure of thin copper films 308
Ab initio calculation of adhesion and potential corrugation of diamond (001) interfaces 287
Topological properties of the bond-modulated honeycomb lattice 281
Ab-initio calculation of the optical properties of silicon quantum wires 277
Combined ab initio and kinetic Monte Carlo simulations of C diffusion on the root(3)X root(3) beta-SiC(111) surface 275
Absence of filled surface states in the s-p gap of clean (111) surface of Ag 275
Angle-resolved resonant inelastic x-ray scattering from transition-metal magnetic ions 273
Italian family with two independent mutations:3358T/A in BRCA1 and 8756delA in BRCA2 genes. 272
Electronic Structure of an Ordered Monolayer of Cu on Zn(0001) 271
CHEMISORPTION GEOMETRY ON CLEAVED III-V SURFACES - CL ON GAAS, GASB, AND INSB 271
First-Principle Molecular Dynamics of Sliding Diamond Surfaces: Tribochemical Reactions with Water and Load Effects 269
Ab initio Simulations of Homoepitaxial SiC Growth 266
A theoretical study of ordered monolayer films of Copper 263
Azimuthal Dependence of the Vibrational Excitation in Si(111)(2x1) 263
First-principles study of Sb-stabilized GaSb(001) surface reconstructions 260
Interaction of Cl-2 molecules with GaAs(110) surface 260
Angular and polarization dependence of x-ray resonant elastic scattering in transition metals 258
Copper on Ni(111): the electron states from submonolayer to several monolayer coverages 258
Theoretical study of the electronic structure of GaP(110) 252
Atomic and electronic structure of the cleaved 6H-SiC (11 2̄ 0) surface 252
Sum rules for resonant inelastic x-ray scattering: Explicit form and angular dependence in perpendicular geometry 250
ADSORPTION OF MONO-VALENT METALS ON THE GaAs(110) SURFACE 250
Band structure calculation for GaAs and Si beyond the local density approximation 250
Acetylene on Si(111) from computer simulations 248
Atomic and electronic structure of the nonpolar GaN (1 1̄ 00) surface 248
Effects of chemical environment in the lineshape of Silicon LVV Auger spectra of Nickel Silicides 246
Azimuthal Dependence of Reflection High Resolution Electron Energy Loss of Si(111) (2x1) 246
BRCA1 mutations and clinico-pathological features in a sample of italian women with early-onset breast cancer 242
Polarization properties of (1-100) and (11-20) SiC surfaces from first principles 242
Surface bands of the (001) surface of molybdenum 241
sp-d hybridization effects on the electronic structure of the (100) surface in Copper 240
Image force effects in the barrier height for metal-metal tunneling electrons 232
Perturbative valence charge density of trigonal Se and Te 231
A perturbative approach to the valence charge density in tetrahedrally bonded semiconductors 231
Topological invariants in interacting quantum spin Hall: a cluster perturbation theory approach 231
XPS surface analysis of monocrystalline silicon solar cells for manufacturing control 229
Surface-induced stacking transition at SiC(0001) 229
SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION OF THE ELECTRONIC-PROPERTIES OF THE INP (110) SURFACE 228
First-principle study of ß-AlN thin films on ß-SiC(001) 226
Quantum Description of the Matter-Radiation Interaction 226
Chemisorption sites and reaction pathways for acetylene on Si(111)-(7x7) 222
ELECTRONIC-STRUCTURE AND ATOMIC CONFIGURATION AT CLEAVAGE SURFACE OF ZINCBLENDE COMPOUNDS 221
Hydrogen covered Si(111) surfaces 220
Role of three-body interactions in the calculator of the total energy and the shear modulus of hexagonal metals 219
ELECTRON-STATES OF AN Sb-ORDERED OVERLAYER ON GaAs(110) 218
Optical dichroism: E1-M1 integral relations 216
NONLOCAL EXCHANGE AND CORRELATION AND SEMICONDUCTOR BAND-STRUCTURE 214
Three-body forces in the lattice dynamics of Beryllium 213
MICROSCOPIC ASPECTS OF SI-GE HETEROJUNCTION FORMATION 212
Angle resolved resonant inelastic X-ray scattering: intensity and dichroism from 3d transition metals in special geometries 211
Carbon induced restructuring of the Si(111) surface 210
Non-local exchange and correlation in the jellium model of surfaces 210
Hydrogen adsorption on compound semiconductor surfaces 209
ELECTRON-STATES AT Zn(0001) SURFACE 207
Dielectric screening matrix and lattice dynamics of Si 207
Image potential at metal surfaces 206
STRUCTURAL MODELS OF RECONSTRUCTED Si(110) SURFACE PHASES 206
Electronic structure of Si(111)-NiSi2(111) A-type and B-type interfaces 205
Density of states at the Si(111)-(2×1) surface: A study of the clean and H-covered surface 204
ELECTRONIC-PROPERTIES OF THE Cs-GaAs(110) INTERFACE AT MONOLAYER COVERAGE 204
DIRECT EVIDENCE FOR D-BAND INVOLVEMENT IN THE TISE2 PHASE-TRANSITION 201
Study of arsenic for antimony exchange at the Sb-stabilized GaSb(0 0 1) surface 200
THEORETICAL INVESTIGATION OF HYDROGEN CHEMISORPTION ON GA-CONTAINING III-V-COMPOUNDS 200
EVIDENCE FOR SEMICONDUCTOR-SEMICONDUCTOR INTERFACE STATES - SI(111) (2X1)-GE 198
PHOTOEMISSION STUDIES OF HETEROJUNCTION INTERFACE FORMATION - GE-GAAS(110) AND GE-SI(111) 197
Surface vibration at clean and hydrogenated GaAs(110) from ab-intio molecular-dynamics 196
Ab initio investigation of the adsorption of organic molecules at Si(111) and Si(100) surfaces 196
Dielectric matrix and phonon frequencies in Silicon 193
THE ELECTRONIC-STRUCTURE OF GALLIUM NITRIDE 192
The phonon spectra of LiH and LiD from density-functional perturbation theory 191
Chemisorption geometry on cleaved GaAs (110) surfaces 191
Resonant inelastic X-ray scattering from magnetic systems: Mn in MnFe2O4 190
Theoretical study of the electronic structure of the GaP-Si(110) interface 190
Density-of-states changes near the Fermi level and the lattice instability in TiSe_2 190
Valence Charge Density in Aluminum 188
SIMPLE METAL-SURFACES AND IMAGE POTENTIAL STATES 188
Two dimensional band structure of chemisorbed chlorine on GaAs(110) 188
Electronic Structure of cubic GaN with Self-Energy Corrections 186
THE ELECTRONIC-PROPERTIES OF SI-NISI2(111) EPITAXIAL INTERFACES 184
Third order perturbation theory and lattice dynamics of simple metals 183
Kinetic Monte Carlo simulations of C diffusion on √3 × √3 β-SiC(111) based on ab initio calculations 180
Surface electronic states at the (110) surfaces of III-V compounds 180
Linear-Combination-of-Atomic-Orbital description of the electron states at the (0001) surfaces of hexagonal-close-packed metals 179
Chapter 4 Electronic structure of adsorbates on surfaces. Adsorption on semiconductors 179
Thermodynamic Properties of Alkali Metals 177
CHEMICAL ORDER IN AMORPHOUS COVALENT ALLOYS - A THEORETICAL-STUDY OF A-SiC 177
Surface electron states at the (110) surfaces of III-V semiconductors 175
Image plane for surface potential 174
Confinement and passivation in isolated and coupled silicon quantum wires 173
The Vacancy Formation Energy for Zirconium. 173
The electonic structure of the (100) surface of Copper 172
Surface bands of Ga containing III-V compounds 171
Surface bands in relaxed cleavage surface of GaP 168
Density functional calculation of atomic structure with non-local exchange and correlation 168
First-principle simulations of molecular processes at semiconductor surfaces 168
Calculation of the electronic properties of simple metal surfaces through lateral averaged pseudopotential 168
Dielectric matrix and covalent charge distribution of silicon 166
Electron density profiles at charged metal surfaces in the weighted density approximation 166
Surface effects in GaN growth 165
Magnetic circular dichroism in resonant x-ray emission from impurities: Results at the L-2,(3) edges of Mn in Ni 159
Totale 21.671
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Categoria #
all - tutte 92.626
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 92.626
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.682 0 0 0 0 0 191 251 354 154 331 276 125
2021/20222.191 30 331 322 131 42 160 198 77 200 131 341 228
2022/20231.842 221 166 152 133 196 379 30 189 226 7 79 64
2023/20241.038 52 59 48 236 200 83 83 79 31 16 48 103
2024/20254.396 151 49 52 236 933 653 179 234 392 328 488 701
2025/20263.775 501 531 792 791 593 567 0 0 0 0 0 0
Totale 24.411