We present a theoretical investigation of the effect of surface relaxation on the electronic structure of the cleavage faces of III-V compounds. The energy position of the surface states, their localization and orbital composition are discussed.
Surface electron states at the (110) surfaces of III-V semiconductors / Bertoni, Carlo Maria; Bisi, Olmes; CALANDRA BUONAURA, Carlo; Manghi, Franca. - STAMPA. - 43:(1979), pp. 191-194. (Intervento presentato al convegno N/A tenutosi a N/A nel N/A).
Surface electron states at the (110) surfaces of III-V semiconductors
BERTONI, Carlo Maria;BISI, Olmes;CALANDRA BUONAURA, Carlo;MANGHI, Franca
1979
Abstract
We present a theoretical investigation of the effect of surface relaxation on the electronic structure of the cleavage faces of III-V compounds. The energy position of the surface states, their localization and orbital composition are discussed.
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