Abstract The densities of states and the two-dimensional band structure provide a detailed investigation of the electronic structure of the A-type and B-type epitaxial Si---NiSi2(111) interfaces. We find that the Schottky barrier height is dependent not only on the type of interface growth, but also on the interface relaxation distance.
THE ELECTRONIC-PROPERTIES OF SI-NISI2(111) EPITAXIAL INTERFACES / Ossicini, Stefano; Bisi, Olmes; Bertoni, Carlo Maria. - In: VACUUM. - ISSN 0042-207X. - STAMPA. - 41:(1990), pp. 681-683.
THE ELECTRONIC-PROPERTIES OF SI-NISI2(111) EPITAXIAL INTERFACES
OSSICINI, Stefano;BISI, Olmes;BERTONI, Carlo Maria
1990
Abstract
Abstract The densities of states and the two-dimensional band structure provide a detailed investigation of the electronic structure of the A-type and B-type epitaxial Si---NiSi2(111) interfaces. We find that the Schottky barrier height is dependent not only on the type of interface growth, but also on the interface relaxation distance.
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