The self-consistent electronic properties of the epitaxial Si(111)-NiSi2(111) interfaces are computed for the experimentally observed A- and B-type interface structures. The densities of states projected at the different atomic sites and the two-dimensional band structure provide a detailed analysis of the electronic properties of the silicon-silicide interface. The Schottky-barrier height turns out to be dependent not only on the interface structure, but also on the interface relaxation distance. A critical analysis of existing results is also presented.
Electronic structure of Si(111)-NiSi2(111) A-type and B-type interfaces / Ossicini, Stefano; Bisi, Olmes; Bertoni, Carlo Maria. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 42:(1990), pp. 5735-5743.
Electronic structure of Si(111)-NiSi2(111) A-type and B-type interfaces
OSSICINI, Stefano;BISI, Olmes;BERTONI, Carlo Maria
1990
Abstract
The self-consistent electronic properties of the epitaxial Si(111)-NiSi2(111) interfaces are computed for the experimentally observed A- and B-type interface structures. The densities of states projected at the different atomic sites and the two-dimensional band structure provide a detailed analysis of the electronic properties of the silicon-silicide interface. The Schottky-barrier height turns out to be dependent not only on the interface structure, but also on the interface relaxation distance. A critical analysis of existing results is also presented.
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