The electronic properties of an Sb overlayer deposited onto a GaAs(110) surface have been calculated using a self-consistent-pseudopotential approach and assuming the ordered-overlayer geometry proposed in recent low-energy electron diffraction studies. The results show that Sb adatoms are bound by strong covalent bonds to the substrate and that various overlayer or chemisorption-induced states appear throughout the valence band. Comparison with photoemission data allows us to assign a major Sb-induced structure appearing in the energy distribution curves.
ELECTRON-STATES OF AN Sb-ORDERED OVERLAYER ON GaAs(110) / Bertoni, Carlo Maria; CALANDRA BUONAURA, Carlo; Manghi, Franca; Molinari, Elisa. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 27:(1983), pp. 1251-1258. [10.1103/PhysRevB.27.1251]
ELECTRON-STATES OF AN Sb-ORDERED OVERLAYER ON GaAs(110)
BERTONI, Carlo Maria;CALANDRA BUONAURA, Carlo;MANGHI, Franca;MOLINARI, Elisa
1983
Abstract
The electronic properties of an Sb overlayer deposited onto a GaAs(110) surface have been calculated using a self-consistent-pseudopotential approach and assuming the ordered-overlayer geometry proposed in recent low-energy electron diffraction studies. The results show that Sb adatoms are bound by strong covalent bonds to the substrate and that various overlayer or chemisorption-induced states appear throughout the valence band. Comparison with photoemission data allows us to assign a major Sb-induced structure appearing in the energy distribution curves.
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