A direct correlation was found for the first time between theory and experiments on the localized electronic states at a semiconductor-semiconductor interface. The investigation involved synchrotron-radiation photoemission experiments and tight-binding calculations on Ge adatoms on cleaved Si substrates. The theoretically predicted interface states in a region 4-9 eV below the Fermi level were detected in the experimental spectra. These occupied states and their unoccupied counterparts have a fundamental influence on the localized one-electron transitions and on relevant heterojunction parameters in transport processes.

EVIDENCE FOR SEMICONDUCTOR-SEMICONDUCTOR INTERFACE STATES - SI(111) (2X1)-GE / P., Perfetti; N. G., Stoffel; A. D., Katnani; G., Margaritondo; C., Quaresima; F., Patella; A., Savoia; Bertoni, Carlo Maria; Manghi, Franca. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 24(1981), pp. 6174-6177.

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