We present a combined cross-section scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) and ab initio simulations study of the nonpolar (11 2̄ 0) cleaved surface of 6H-SiC. The experimental results show an unreconstructed surface in agreement with theory. Upon truncation, two surface bands appear inside the semiconductor band gap: one empty band localized on the Si atoms and one filled band on the C atoms. According to the STS experimental results on n -doped samples, the Fermi energy is pinned at the surface inside the band gap. By comparison of STM filled and empty states topographies we propose that on the fresh cleaved surface the Fermi level lies at the bottom of the Si-like band. The calculated STM images reproduce the experimental contrast of the 6H stacking sequence and its bias dependence very well. © 2007 The American Physical Society.

Atomic and electronic structure of the cleaved 6H-SiC (11 2̄ 0) surface / Bertelli, Matteo; Homoth, J.; Wenderoth, M.; Rizzi, Angela; Ulbrich, R. G.; Righi, Maria Clelia; Bertoni, Carlo Maria; Catellani, A.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 75:(2007), pp. 165312-165319. [10.1103/PhysRevB.75.165312]

Atomic and electronic structure of the cleaved 6H-SiC (11 2̄ 0) surface

BERTELLI, MATTEO;RIZZI, Angela;RIGHI, Maria Clelia;BERTONI, Carlo Maria;
2007

Abstract

We present a combined cross-section scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) and ab initio simulations study of the nonpolar (11 2̄ 0) cleaved surface of 6H-SiC. The experimental results show an unreconstructed surface in agreement with theory. Upon truncation, two surface bands appear inside the semiconductor band gap: one empty band localized on the Si atoms and one filled band on the C atoms. According to the STS experimental results on n -doped samples, the Fermi energy is pinned at the surface inside the band gap. By comparison of STM filled and empty states topographies we propose that on the fresh cleaved surface the Fermi level lies at the bottom of the Si-like band. The calculated STM images reproduce the experimental contrast of the 6H stacking sequence and its bias dependence very well. © 2007 The American Physical Society.
75
165312
165319
Atomic and electronic structure of the cleaved 6H-SiC (11 2̄ 0) surface / Bertelli, Matteo; Homoth, J.; Wenderoth, M.; Rizzi, Angela; Ulbrich, R. G.; Righi, Maria Clelia; Bertoni, Carlo Maria; Catellani, A.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 75:(2007), pp. 165312-165319. [10.1103/PhysRevB.75.165312]
Bertelli, Matteo; Homoth, J.; Wenderoth, M.; Rizzi, Angela; Ulbrich, R. G.; Righi, Maria Clelia; Bertoni, Carlo Maria; Catellani, A.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1115934
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 4
  • ???jsp.display-item.citation.isi??? 4
social impact