An ab initio simulation study of SiC homoepitaxial growth is presented. It is shown that the nonstoichiometric reconstruction plays a relevant role in favoring the attainment of high-quality films. It is observed that the energy gain upon surface stability can induce the reorganization of the deposited material into the crystalline structure, thus revealing that a surface-driven mechanism is able to stabilize defect-free layer deposition on Si-rich surfaces.
Ab initio Simulations of Homoepitaxial SiC Growth / Righi, Maria Clelia; Pignedoli, C. A.; Di Felice, R.; Bertoni, Carlo Maria; Catellani, A.. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - 91:13(2003), pp. 1361011-1361014. [10.1103/PhysRevLett.91.136101]
Ab initio Simulations of Homoepitaxial SiC Growth
RIGHI, Maria Clelia;BERTONI, Carlo Maria;
2003
Abstract
An ab initio simulation study of SiC homoepitaxial growth is presented. It is shown that the nonstoichiometric reconstruction plays a relevant role in favoring the attainment of high-quality films. It is observed that the energy gain upon surface stability can induce the reorganization of the deposited material into the crystalline structure, thus revealing that a surface-driven mechanism is able to stabilize defect-free layer deposition on Si-rich surfaces.
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