A comparison between the formation mechanism of Ge-GaAs(110) and Ge-Si(111) is presented. The localized valence band states and core-level states were detected by photoemission spectroscopy with synchrotron radiation. Both interfaces are sharp and Ge forms smooth overlayers at room temperature. The measured band discontinuities sharply disagree with the prediction of 'linear' interface models. More sophisticated interface models give band discontinuities in agreement with our experimental results.
PHOTOEMISSION STUDIES OF HETEROJUNCTION INTERFACE FORMATION - GE-GAAS(110) AND GE-SI(111) / G., Margaritondo; N. G., Stoffel; A. D., Katnani; H. S., Edelman; Bertoni, Carlo Maria. - In: THE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. - ISSN 0022-5355. - STAMPA. - 18:(1981), pp. 784-786. [10.1116/1.570947]
PHOTOEMISSION STUDIES OF HETEROJUNCTION INTERFACE FORMATION - GE-GAAS(110) AND GE-SI(111)
BERTONI, Carlo Maria
1981
Abstract
A comparison between the formation mechanism of Ge-GaAs(110) and Ge-Si(111) is presented. The localized valence band states and core-level states were detected by photoemission spectroscopy with synchrotron radiation. Both interfaces are sharp and Ge forms smooth overlayers at room temperature. The measured band discontinuities sharply disagree with the prediction of 'linear' interface models. More sophisticated interface models give band discontinuities in agreement with our experimental results.
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