Self-consistent pseudopotential calculations have been performed to determine the electronicstructure of a Si overlayer on GaP(110) surface. The results show that both filled and empty Si-induced states appear in the gap. The consequences for the Fermi level pinning are discussed and recent experimental results are explained.
Theoretical study of the electronic structure of the GaP-Si(110) interface / CALANDRA BUONAURA, Carlo; Manghi, Franca; Bertoni, Carlo Maria. - In: SURFACE SCIENCE. - ISSN 0039-6028. - STAMPA. - 162:(1985), pp. 605-609. [10.1016/0039-6028(85)90954-9]
Theoretical study of the electronic structure of the GaP-Si(110) interface
CALANDRA BUONAURA, Carlo;MANGHI, Franca;BERTONI, Carlo Maria
1985
Abstract
Self-consistent pseudopotential calculations have been performed to determine the electronicstructure of a Si overlayer on GaP(110) surface. The results show that both filled and empty Si-induced states appear in the gap. The consequences for the Fermi level pinning are discussed and recent experimental results are explained.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
