A fully self-consistent pseudopotential calculation of the electronic properties of atomic hydrogen chemisobed on GaAs and GaP (110) surface is reported. Different chemisorption geometries ans substrate coverages are considered. The results are compared with the experimental information to select a structural model.
THEORETICAL INVESTIGATION OF HYDROGEN CHEMISORPTION ON GA-CONTAINING III-V-COMPOUNDS / Manghi, Franca; Bertoni, Carlo Maria; CALANDRA BUONAURA, Carlo; Molinari, Elisa. - In: THE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. - ISSN 0022-5355. - STAMPA. - 21:(1982), pp. 371-374. [10.1116/1.571783]
THEORETICAL INVESTIGATION OF HYDROGEN CHEMISORPTION ON GA-CONTAINING III-V-COMPOUNDS
MANGHI, Franca;BERTONI, Carlo Maria;CALANDRA BUONAURA, Carlo;MOLINARI, Elisa
1982
Abstract
A fully self-consistent pseudopotential calculation of the electronic properties of atomic hydrogen chemisobed on GaAs and GaP (110) surface is reported. Different chemisorption geometries ans substrate coverages are considered. The results are compared with the experimental information to select a structural model.Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris