We present calculations of the electronic structure of the relaxed (110) face of all the Ga containing III-V materials. Surface features are identified either by their location inside gaps of the projected bulk band structure or by the localization of the wave function near the surface. The calculation provides the first accurate description of the surface electronic structure of Ga containing III-V compounds and explain the main trends of the experimental data.
Surface bands of Ga containing III-V compounds / Bertoni, Carlo Maria; Bisi, Olmes; CALANDRA BUONAURA, Carlo; Manghi, Franca. - In: NEDERLANDS TIJDSCHRIFT VOOR VACUUM TECHNIEK. - ISSN 0047-9233. - STAMPA. - 16:(1978), pp. 196-197.
Surface bands of Ga containing III-V compounds
BERTONI, Carlo Maria;BISI, Olmes;CALANDRA BUONAURA, Carlo;MANGHI, Franca
1978
Abstract
We present calculations of the electronic structure of the relaxed (110) face of all the Ga containing III-V materials. Surface features are identified either by their location inside gaps of the projected bulk band structure or by the localization of the wave function near the surface. The calculation provides the first accurate description of the surface electronic structure of Ga containing III-V compounds and explain the main trends of the experimental data.
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