MAGRI, Rita
 Distribuzione geografica
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Continente #
NA - Nord America 11.588
EU - Europa 4.428
AS - Asia 2.831
SA - Sud America 317
AF - Africa 28
OC - Oceania 6
Continente sconosciuto - Info sul continente non disponibili 3
Totale 19.201
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Nazione #
US - Stati Uniti d'America 11.514
GB - Regno Unito 1.836
CN - Cina 823
SG - Singapore 792
SE - Svezia 715
HK - Hong Kong 641
IT - Italia 496
DE - Germania 362
BR - Brasile 281
UA - Ucraina 265
RU - Federazione Russa 260
TR - Turchia 236
FI - Finlandia 180
BG - Bulgaria 114
KR - Corea 87
IN - India 68
FR - Francia 45
CA - Canada 41
IE - Irlanda 28
BZ - Belize 25
LT - Lituania 24
IR - Iran 23
ID - Indonesia 22
VN - Vietnam 22
NL - Olanda 21
BE - Belgio 18
BD - Bangladesh 15
PK - Pakistan 14
RO - Romania 14
JP - Giappone 13
AR - Argentina 11
EC - Ecuador 10
ES - Italia 10
ZA - Sudafrica 10
CL - Cile 7
CZ - Repubblica Ceca 7
AZ - Azerbaigian 6
IQ - Iraq 6
MA - Marocco 6
SA - Arabia Saudita 6
UZ - Uzbekistan 6
AT - Austria 5
AU - Australia 5
DK - Danimarca 5
EG - Egitto 5
MX - Messico 5
MY - Malesia 5
PL - Polonia 5
TW - Taiwan 5
AE - Emirati Arabi Uniti 4
IL - Israele 4
LK - Sri Lanka 4
OM - Oman 4
PH - Filippine 4
AM - Armenia 3
CH - Svizzera 3
DZ - Algeria 3
KG - Kirghizistan 3
LA - Repubblica Popolare Democratica del Laos 3
LV - Lettonia 3
UY - Uruguay 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AL - Albania 2
CO - Colombia 2
CR - Costa Rica 2
GE - Georgia 2
GR - Grecia 2
JO - Giordania 2
KE - Kenya 2
KZ - Kazakistan 2
NO - Norvegia 2
VE - Venezuela 2
AO - Angola 1
EE - Estonia 1
EU - Europa 1
HU - Ungheria 1
JM - Giamaica 1
LB - Libano 1
LU - Lussemburgo 1
MN - Mongolia 1
NZ - Nuova Zelanda 1
PE - Perù 1
PS - Palestinian Territory 1
PT - Portogallo 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
TJ - Tagikistan 1
TZ - Tanzania 1
Totale 19.201
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Città #
Fairfield 1.503
Southend 1.384
Santa Clara 1.313
Woodbridge 1.000
Ashburn 843
Chandler 810
Houston 761
Hong Kong 639
Jacksonville 601
Seattle 580
Wilmington 504
Singapore 496
Cambridge 465
Ann Arbor 431
Dearborn 395
Nyköping 356
London 277
Hefei 237
Modena 195
Beijing 151
Izmir 139
San Diego 118
Sofia 114
Princeton 113
Council Bluffs 109
Eugene 97
Helsinki 79
Des Moines 74
Moscow 62
Seoul 60
Bremen 53
New York 53
Columbus 43
San Jose 41
Munich 38
San Mateo 38
Shanghai 36
Dallas 35
Los Angeles 32
Milan 32
Kunming 27
Belize City 25
The Dalles 25
Dublin 24
Redwood City 24
Boardman 23
Toronto 22
Leawood 21
São Paulo 21
Bologna 20
Jakarta 20
Nanjing 20
Chicago 19
Jinju 19
Brussels 17
Norwalk 17
Reggio Emilia 17
Mumbai 14
Auburn Hills 13
San Francisco 13
Wuhan 13
Ardabil 12
Augusta 12
Falls Church 12
Jinan 12
Ottawa 12
Philadelphia 12
Chiswick 11
Rio de Janeiro 11
Atlanta 10
Guangzhou 10
Hounslow 10
Parma 10
Santo Ângelo 10
Turku 10
Verona 10
Indiana 9
Monmouth Junction 9
Saint Louis 9
Suri 9
Zhengzhou 9
Brooklyn 8
Sant'Ilario d'Enza 8
Frankfurt am Main 7
Hanoi 7
Ho Chi Minh City 7
Nuremberg 7
Trieste 7
Baku 6
Brasília 6
Formigine 6
Kilburn 6
Pune 6
Redmond 6
Tashkent 6
Tokyo 6
Washington 6
Chengdu 5
Colorno 5
Dong Ket 5
Totale 15.050
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Nome #
Metal-support interaction in catalysis: The influence of the morphology of a nano-oxide domain on catalytic activity 280
Attractive interactions between like-oriented surface steps from an ab initio perspective: Role of the elastic and electrostatic contributions 254
H2 Dissociation on Noble Metal Single Atom Catalysts Adsorbed on and Doped into CeO2 (111) 245
Surface and confinement effects on the optical and structural properties of silicon nanocrystals 244
Step energy and step interactions on the reconstructed GaAs(001) surface 243
Si and Ge based metallic core/shell nanowires for nano-electronic device applications 243
Adsorption of Indium on an InAs wetting layer deposited on the GaAs(001) surface 235
Codoping goes Nano: Structural and Optical Properties of Boron and Phosphorus Codoped Silicon Nanocrystals 228
In adsorption and diffusion on in-rich (2×4) reconstructed InGaAs surfaces on GaAs(001) 227
Indium surface diffusion on InAs (2x4) reconstructed wetting layers on GaAs(001) 227
Doping in silicon nanostructures 223
Anticrossing and coupling of light-hole and heavy-hole states in (001) GaAs/AlxGa1-xAs heterostructures 219
The electronic and optical properties of silicon nanoclusters: absorption and emission 216
Reduction and Oxidation of Maghemite (001) Surfaces: The Role of Iron Vacancies 216
Ab-initio investigation of the polarization anisotropy of the optical absorption in (InGa)As-InP superlattices 210
First-principles study of Sb-stabilized GaSb(001) surface reconstructions 209
DIAMOND-LIKE ORDER IN ZINCBLENDE COMPOUNDS 209
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 209
First-principles study of silicon nanocrystals: Structural and electronic properties, absorption, emission, and doping 209
Electronic and optical properties of silicon nanocrystals: structural effects 206
Structural stability of clean GaAs nanowires grown along the [111] direction 205
Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties 205
Doping in silicon nanocrystals 204
Formation energies of silicon nanocrystals: role of dimension and passivation 203
Surface Effects on the Atomic and Electronic Structure of Unpassivated GaAs Nanowires 202
Role of surface structural motifs on the stability and reflectance anisotropy spectra of Sb-rich GaSb(001) reconstructions 201
Kinetically driven selective growth of InAs quantum dots on GaAs 201
Surface compositional profiles of self-assembled InAs/GaAs quantum rings 199
Effects of wetting layer structure on surface phase stability and on indium surface diffusion 198
Characterization of Bioacceptable Carbon Materials 197
Formation energies of silicon nanocrystals: role of dimension and passivation 197
Electronic excitations in solids: Density functional and Green's function theory 196
Structural and electronic properties of Sb islands on GaAs (110) 196
Ab-initio Calculations Of The Electronic Properties of Silicon Nanocrystals: Absorption, Emission, Stokes Shift 194
THEORETICAL STUDIES OF ABSORPTION, EMISSION AND GAIN IN SILICON NANOSTRUCTURES 194
The electronic and optical properties of InGaAs/InP and InAlAs/InP superlattices 193
Gain theory and models in silicon nanostructures 193
Structural stability and valence charge density in (GaAs)1(InAs)1 (111) superlattice 193
Theory of optical properties of segregated InAs/GaSb superlattices 192
Electronic, structural and optical properties of hydrogenated silicon nanocrystals: the role of the excited states 192
Study of arsenic for antimony exchange at the Sb-stabilized GaSb(0 0 1) surface 191
Optical properties of silicon nanocrystallites in SiO2 matrix:Crystalline vs. amorphous case 190
Electronic structure of self-assembled InAs/InP quantum dots: Comparison with self-assembled InAs/GaAs quantum dots 189
Anticrossing semiconducting band gap in nominally semimetallic InAs/GaSb superlattices 188
Reduction Properties of (001) Maghemite Surfaces 188
Predicting interband transition energies for InAs/GaSb superlattices using the empirical pseudopotential method 186
Role of surface passivation and doping in silicon nanocrystals 185
ROLE OF SYMMETRY REDUCTION IN THE POLARIZATION DEPENDENCE OF THE OPTICAL ABSORPTION IN NON-COMMON ATOM SUPERLATTICES 185
Role of interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2 185
Gain theory and models in silicon nanostructures 184
Real-space description of semiconducting band gaps in substitutional systems 184
Ab-initio Calculations Of The Electronic Properties of Hydrogenated and Oxidized Silicon Nanocrystrals: Ground and Excited States 184
Electronic band structure of the (GaAs)1/(InAs)1 (111) superlattice 183
In adatom diffusion on InxGa1-xAs/GaAs(001): effects of strain, reconstruction and composition 183
Effects of interfacial atomic segregation on optical properties of InAs/GaSb superlattices 183
The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs 180
Electronic properties of Sb deposited on GaAs(110) in the submonolayer coverage regime 179
Understanding doping in silicon nanostructures 178
Predicting structural energies of atomic lattices 178
Surface effects in the electronic properties of YBa2Cu3O7 178
Reduced cerium configurations in CeO2/Ag inverse catalysis 178
Si nanostructures embedded in SiO[sub 2]: electronic and optical properties 177
Ab-initio structural and electronic properties of hydrogenated silicon nanoclusters in their ground and excited state 177
Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties 175
Selective growth of InAs quantum dots on GaAs driven by as kinetics 175
Surface compositional mapping of self-assembled InAs/GaAs quantum rings 173
Excitons in Silicon Nanocrystallites: the Nature of Luminescence 171
InAs Epitaxy on GaAs(001): A Model Case of Strain-Driven Self-Assembling of Qunatum Dots 171
Search for stable configuration of (GaAs)1(InAs)1 (111) superlattice 170
Manipulating surface diffusion and elastic interactions to obtain quantum dot multilayer arrangements over different length scales 170
IN PLANE ANISOTROPY OF THE OPTICAL PROPERTIES OF (In0.5Ga0.5As)n/(InP)n SUPERLATTICES. 169
Stress-determined nucleation sites above GaAs-capped arrays of InAs quantum dots 169
Effects of interfacial atomic segregation and intermixing on the electronic properties of InAs/GaSb superlattices 169
Experimental and theoretical joint study on the electronic and structural properties of silicon nanocrystals embedded in SiO2: active role of the interface region 164
Electronic structure and density of states of the random Al0.5Ga0.5As, Ga0.5As0.5P, and Ga0.5In0.5As semiconductor alloys 164
First-principles study of n- and p-doped silicon nanoclusters 163
Pseudopotential calculations of band gaps and band edges of short-period (InAs)n (GaSb)m superlattices with different substrates, layer orientations, and interfacial bonds 163
Ground state structures and the random state energy of the Madelung lattice 163
Silicon nanocrystallites in a SiO2 matrix: Role of disorder and size 162
Evolution of the band-gap and band-edge energies of the lattice-matched GaInAsSb/GaSb and GaInAsSb/InAs alloys as a function of composition 162
P and B single- and co-doped silicon nanocrystals: Formation and activation energies, electronic and optical properties 161
Giant birefringence in zinc-blende-based artificial semiconductors 160
Band folding, strain, confinement, and surface relaxation effects on the electronic structure of GaAs and GaP: from bulk to nanowires 160
Optical properties of GaSb(001)--c(2x6): the role of surface antisite defects 159
Segregation effects on the optical properties of (InAs)/(GaSb) superlattices 159
Surface Reactivity of Ag-Modified Ceria to Hydrogen: A Combined Experimental and Theoretical Investigation 159
Spontaneous Formation of Surface Antisite Defects in the Stabilization of the Sb-Rich GaSb(001) Surface 158
Strain-engineered arrays of InAs quantum dots on GaAs(001): Epitaxial growth and modeling 157
Density functional calculations of the structural, electronic and optical properties of semiconductor nanostructures 155
Structure and optical properties of the Sb-stabilized GaSb(001) surface 154
A first-principles study of self-healing binders for next-generation Si-based lithium-ion batteries 151
Structural, electronic and optical properties of silicon nanoclusters: the role of the size and surface passivation 149
ORDERING IN BXC1-X COMPOUNDS WITH THE GRAPHITE STRUCTURE 148
Thermodynamic instability of ordered (001) GaAlAs in bulk form 145
Will silicon be the photonics material of the third millennium? 143
Electron electron correlation for Sb on GaAs(110) 142
Theory of optical properties of 6.1 Å III-V superlattices: The role of the interfaces 140
The structural, electronic and optical properties of Si nanoclusters: effects of size, doping and surface passivation 139
Erratum: Step energy and step interactions on the reconstructed GaAs(001) surface (Physical Review B - Condensed Matter and Materials Physics (2014) 90 (115314) DOI: 10.1103/PhysRevB.90.115314) 130
Methane Activation on Metal-Doped (111) and (100) Ceria Surfaces with Charge-Compensating Oxygen Vacancies 116
Totale 18.558
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Categoria #
all - tutte 80.241
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 80.241
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20212.495 218 95 185 174 268 193 183 278 126 334 295 146
2021/20222.068 35 249 292 138 39 85 133 92 214 117 463 211
2022/20232.078 227 191 195 159 289 348 37 218 255 12 68 79
2023/20241.102 42 85 83 155 226 58 90 140 38 27 70 88
2024/20254.544 150 60 48 313 940 643 358 321 427 129 524 631
2025/2026107 107 0 0 0 0 0 0 0 0 0 0 0
Totale 19.348