MAGRI, Rita
 Distribuzione geografica
Continente #
NA - Nord America 15.223
AS - Asia 6.602
EU - Europa 5.155
SA - Sud America 742
Continente sconosciuto - Info sul continente non disponibili 152
AF - Africa 114
OC - Oceania 13
Totale 28.001
Nazione #
US - Stati Uniti d'America 14.975
CN - Cina 1.971
SG - Singapore 1.937
GB - Regno Unito 1.885
IT - Italia 762
HK - Hong Kong 756
SE - Svezia 738
VN - Vietnam 590
BR - Brasile 572
DE - Germania 410
UA - Ucraina 291
KR - Corea 274
RU - Federazione Russa 273
TR - Turchia 260
BD - Bangladesh 236
FI - Finlandia 228
FR - Francia 175
IN - India 141
BG - Bulgaria 120
CA - Canada 112
ID - Indonesia 56
MX - Messico 55
AR - Argentina 51
JP - Giappone 49
ZA - Sudafrica 43
IQ - Iraq 40
AE - Emirati Arabi Uniti 38
PK - Pakistan 34
IE - Irlanda 33
NL - Olanda 32
ES - Italia 30
PL - Polonia 30
EC - Ecuador 28
LT - Lituania 28
BE - Belgio 25
BZ - Belize 25
CO - Colombia 25
IR - Iran 25
UZ - Uzbekistan 24
PH - Filippine 22
MA - Marocco 21
CL - Cile 20
VE - Venezuela 19
SA - Arabia Saudita 18
MY - Malesia 17
RO - Romania 17
CZ - Repubblica Ceca 13
JM - Giamaica 13
JO - Giordania 12
AU - Australia 11
AZ - Azerbaigian 11
KZ - Kazakistan 11
TH - Thailandia 11
KE - Kenya 10
TN - Tunisia 10
CR - Costa Rica 9
TW - Taiwan 9
PY - Paraguay 8
AT - Austria 7
CH - Svizzera 7
DK - Danimarca 7
EG - Egitto 7
IL - Israele 7
OM - Oman 7
PE - Perù 7
PT - Portogallo 7
UY - Uruguay 7
AL - Albania 6
DZ - Algeria 6
HN - Honduras 6
GE - Georgia 5
GT - Guatemala 5
LK - Sri Lanka 5
NI - Nicaragua 5
BH - Bahrain 4
BO - Bolivia 4
GR - Grecia 4
HU - Ungheria 4
KG - Kirghizistan 4
LV - Lettonia 4
NG - Nigeria 4
NP - Nepal 4
PR - Porto Rico 4
RS - Serbia 4
AM - Armenia 3
BY - Bielorussia 3
DO - Repubblica Dominicana 3
LA - Repubblica Popolare Democratica del Laos 3
LB - Libano 3
MD - Moldavia 3
SV - El Salvador 3
SY - Repubblica araba siriana 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AO - Angola 2
CY - Cipro 2
EE - Estonia 2
ET - Etiopia 2
KH - Cambogia 2
MN - Mongolia 2
MU - Mauritius 2
Totale 27.820
Città #
Fairfield 1.503
Ashburn 1.474
Santa Clara 1.419
Southend 1.384
Singapore 1.255
Woodbridge 1.000
Chandler 810
Hefei 799
Houston 773
Hong Kong 739
San Jose 651
Jacksonville 603
Seattle 582
Wilmington 514
Cambridge 466
Ann Arbor 432
Dearborn 395
Nyköping 356
Beijing 314
London 285
Council Bluffs 283
Los Angeles 218
Seoul 207
Modena 196
Ho Chi Minh City 181
The Dalles 168
Chicago 165
Izmir 140
Hanoi 138
San Diego 127
Helsinki 121
New York 120
Sofia 115
Princeton 113
Milan 111
Dallas 103
Eugene 97
Buffalo 93
Lauterbourg 86
Des Moines 77
Salt Lake City 64
Moscow 62
Columbus 59
Bremen 53
São Paulo 50
Shanghai 48
Munich 39
San Mateo 38
Newark 37
Bologna 36
Toronto 35
Atlanta 34
Jinju 34
Washington 34
Jakarta 31
Orem 31
Frankfurt am Main 30
Kent 30
Tokyo 30
Boardman 29
Kunming 29
Dublin 28
Da Nang 27
Belize City 25
Johannesburg 25
Brooklyn 24
Brussels 24
Hillsboro 24
Nanjing 24
Redwood City 24
Haiphong 23
Tampa 23
Reggio Emilia 22
Tashkent 22
Warsaw 22
Leawood 21
Montreal 21
Mumbai 21
Philadelphia 21
Rio de Janeiro 21
Elk Grove Village 20
Miano 20
San Francisco 19
Norwalk 18
Phoenix 18
Mexico City 17
Biên Hòa 16
Hải Dương 16
Rome 16
Detroit 15
Turku 15
Wuhan 15
Chennai 14
Guangzhou 14
Sterling 14
Auburn Hills 13
Augusta 13
Belo Horizonte 13
Denver 13
Jinan 13
Totale 20.200
Nome #
Metal-support interaction in catalysis: The influence of the morphology of a nano-oxide domain on catalytic activity 389
Adsorption of Indium on an InAs wetting layer deposited on the GaAs(001) surface 368
Codoping goes Nano: Structural and Optical Properties of Boron and Phosphorus Codoped Silicon Nanocrystals 349
Anticrossing and coupling of light-hole and heavy-hole states in (001) GaAs/AlxGa1-xAs heterostructures 339
Ab-initio investigation of the polarization anisotropy of the optical absorption in (InGa)As-InP superlattices 339
H2 Dissociation on Noble Metal Single Atom Catalysts Adsorbed on and Doped into CeO2 (111) 339
Ab-initio Calculations Of The Electronic Properties of Silicon Nanocrystals: Absorption, Emission, Stokes Shift 332
Attractive interactions between like-oriented surface steps from an ab initio perspective: Role of the elastic and electrostatic contributions 332
Surface and confinement effects on the optical and structural properties of silicon nanocrystals 330
Ab-initio Calculations Of The Electronic Properties of Hydrogenated and Oxidized Silicon Nanocrystrals: Ground and Excited States 311
Spontaneous Formation of Surface Antisite Defects in the Stabilization of the Sb-Rich GaSb(001) Surface 308
Step energy and step interactions on the reconstructed GaAs(001) surface 306
Si and Ge based metallic core/shell nanowires for nano-electronic device applications 306
First-principles study of silicon nanocrystals: Structural and electronic properties, absorption, emission, and doping 305
Doping in silicon nanocrystals 303
Effects of wetting layer structure on surface phase stability and on indium surface diffusion 302
The electronic and optical properties of silicon nanoclusters: absorption and emission 301
Theory of optical properties of segregated InAs/GaSb superlattices 300
Doping in silicon nanostructures 300
Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties 300
DIAMOND-LIKE ORDER IN ZINCBLENDE COMPOUNDS 299
Indium surface diffusion on InAs (2x4) reconstructed wetting layers on GaAs(001) 299
Reduction and Oxidation of Maghemite (001) Surfaces: The Role of Iron Vacancies 297
Formation energies of silicon nanocrystals: role of dimension and passivation 294
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 294
Role of surface passivation and doping in silicon nanocrystals 292
In adsorption and diffusion on in-rich (2×4) reconstructed InGaAs surfaces on GaAs(001) 289
Gain theory and models in silicon nanostructures 288
First-principles study of Sb-stabilized GaSb(001) surface reconstructions 286
Structural stability of clean GaAs nanowires grown along the [111] direction 280
Role of surface structural motifs on the stability and reflectance anisotropy spectra of Sb-rich GaSb(001) reconstructions 278
Electronic excitations in solids: Density functional and Green's function theory 277
The electronic and optical properties of InGaAs/InP and InAlAs/InP superlattices 277
Anticrossing semiconducting band gap in nominally semimetallic InAs/GaSb superlattices 277
Surface Effects on the Atomic and Electronic Structure of Unpassivated GaAs Nanowires 277
Ab-initio structural and electronic properties of hydrogenated silicon nanoclusters in their ground and excited state 277
THEORETICAL STUDIES OF ABSORPTION, EMISSION AND GAIN IN SILICON NANOSTRUCTURES 274
Gain theory and models in silicon nanostructures 272
Electronic and optical properties of silicon nanocrystals: structural effects 272
Effects of interfacial atomic segregation and intermixing on the electronic properties of InAs/GaSb superlattices 271
Insights into the stability and reactivity of lithiated Si-binder interfaces for next generation lithium-ion batteries 268
Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties 265
Electronic, structural and optical properties of hydrogenated silicon nanocrystals: the role of the excited states 264
First-principles study of n- and p-doped silicon nanoclusters 263
Electronic structure of self-assembled InAs/InP quantum dots: Comparison with self-assembled InAs/GaAs quantum dots 263
Structural stability and valence charge density in (GaAs)1(InAs)1 (111) superlattice 262
Understanding doping in silicon nanostructures 260
A first-principles study of self-healing binders for next-generation Si-based lithium-ion batteries 260
Role of interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2 257
Formation energies of silicon nanocrystals: role of dimension and passivation 256
Reduction Properties of (001) Maghemite Surfaces 256
Predicting interband transition energies for InAs/GaSb superlattices using the empirical pseudopotential method 255
Surface compositional mapping of self-assembled InAs/GaAs quantum rings 253
Effects of interfacial atomic segregation on optical properties of InAs/GaSb superlattices 253
Characterization of Bioacceptable Carbon Materials 252
Structural and electronic properties of Sb islands on GaAs (110) 251
Predicting structural energies of atomic lattices 251
Electronic band structure of the (GaAs)1/(InAs)1 (111) superlattice 251
Kinetically driven selective growth of InAs quantum dots on GaAs 250
Optical properties of silicon nanocrystallites in SiO2 matrix:Crystalline vs. amorphous case 250
Real-space description of semiconducting band gaps in substitutional systems 249
Silicon nanocrystallites in a SiO2 matrix: Role of disorder and size 249
Surface compositional profiles of self-assembled InAs/GaAs quantum rings 249
Methane Activation on Metal-Doped (111) and (100) Ceria Surfaces with Charge-Compensating Oxygen Vacancies 248
Study of arsenic for antimony exchange at the Sb-stabilized GaSb(0 0 1) surface 246
IN PLANE ANISOTROPY OF THE OPTICAL PROPERTIES OF (In0.5Ga0.5As)n/(InP)n SUPERLATTICES. 245
Band folding, strain, confinement, and surface relaxation effects on the electronic structure of GaAs and GaP: from bulk to nanowires 245
Si nanostructures embedded in SiO[sub 2]: electronic and optical properties 244
Search for stable configuration of (GaAs)1(InAs)1 (111) superlattice 242
ROLE OF SYMMETRY REDUCTION IN THE POLARIZATION DEPENDENCE OF THE OPTICAL ABSORPTION IN NON-COMMON ATOM SUPERLATTICES 242
InAs Epitaxy on GaAs(001): A Model Case of Strain-Driven Self-Assembling of Qunatum Dots 242
P and B single- and co-doped silicon nanocrystals: Formation and activation energies, electronic and optical properties 239
Electronic properties of Sb deposited on GaAs(110) in the submonolayer coverage regime 238
In adatom diffusion on InxGa1-xAs/GaAs(001): effects of strain, reconstruction and composition 236
Manipulating surface diffusion and elastic interactions to obtain quantum dot multilayer arrangements over different length scales 235
Density functional calculations of the structural, electronic and optical properties of semiconductor nanostructures 234
Reduced cerium configurations in CeO2/Ag inverse catalysis 232
Giant birefringence in zinc-blende-based artificial semiconductors 230
The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs 229
Experimental and theoretical joint study on the electronic and structural properties of silicon nanocrystals embedded in SiO2: active role of the interface region 228
Evolution of the band-gap and band-edge energies of the lattice-matched GaInAsSb/GaSb and GaInAsSb/InAs alloys as a function of composition 225
Theory of optical properties of 6.1 Å III-V superlattices: The role of the interfaces 224
Selective growth of InAs quantum dots on GaAs driven by as kinetics 221
Structural and Dynamic Characterization of Li-Ionic Liquid Electrolyte Solutions for Application in Li-Ion Batteries: A Molecular Dynamics Approach 220
ORDERING IN BXC1-X COMPOUNDS WITH THE GRAPHITE STRUCTURE 219
Will silicon be the photonics material of the third millennium? 218
Surface Reactivity of Ag-Modified Ceria to Hydrogen: A Combined Experimental and Theoretical Investigation 218
Pseudopotential calculations of band gaps and band edges of short-period (InAs)n (GaSb)m superlattices with different substrates, layer orientations, and interfacial bonds 217
Stress-determined nucleation sites above GaAs-capped arrays of InAs quantum dots 216
Strain-engineered arrays of InAs quantum dots on GaAs(001): Epitaxial growth and modeling 214
Surface effects in the electronic properties of YBa2Cu3O7 212
Excitons in Silicon Nanocrystallites: the Nature of Luminescence 209
Segregation effects on the optical properties of (InAs)/(GaSb) superlattices 208
Ground state structures and the random state energy of the Madelung lattice 208
The structural, electronic and optical properties of Si nanoclusters: effects of size, doping and surface passivation 201
Optical properties of GaSb(001)--c(2x6): the role of surface antisite defects 201
Electronic structure and density of states of the random Al0.5Ga0.5As, Ga0.5As0.5P, and Ga0.5In0.5As semiconductor alloys 201
Structure and optical properties of the Sb-stabilized GaSb(001) surface 198
Thermodynamic instability of ordered (001) GaAlAs in bulk form 197
Structural, electronic and optical properties of silicon nanoclusters: the role of the size and surface passivation 192
Totale 26.290
Categoria #
all - tutte 108.398
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 108.398


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.784 0 0 292 138 39 85 133 92 214 117 463 211
2022/20232.078 227 191 195 159 289 348 37 218 255 12 68 79
2023/20241.102 42 85 83 155 226 58 90 140 38 27 70 88
2024/20254.544 150 60 48 313 940 643 358 321 427 129 524 631
2025/20268.047 529 494 780 871 1.054 680 879 365 686 756 503 450
2026/2027713 287 397 29 0 0 0 0 0 0 0 0 0
Totale 28.001