We investigate the potential energy surface (PES) and the adsorption properties of an In adatom on InAs (2×4) reconstructed wetting layers (WLs) deposited on a GaAs substrate. The results are then used to derive the diffusion properties of a single In adatom on the WLs. We find that: (i) the adsorbate diffusion is highly anisotropic; (ii) the adsorption sites within the As dimers have to be taken into account since they strongly affect diffusion; (iii) the most stable adsorption sites are the ones within the dimers and those located besides the in-dimers.

We investigate the potential energy surface (PES) and the adsorption properties of an In adatom on InAs (2×4) reconstructed wetting layers (WLs) deposited on a GaAs substrate. The results are then used to derive the diffusion properties of a single In adatom on the WLs. We find that: (i) the adsorbate diffusion is highly anisotropic; (ii) the adsorption sites within the As dimers have to be taken into account since they strongly affect diffusion; (iii) the most stable adsorption sites are the ones within the dimers and those located besides the in-dimers. © 2009 American Institute of Physics.

In adsorption and diffusion on in-rich (2×4) reconstructed InGaAs surfaces on GaAs(001) / Rosini, Marcello; Righi, Maria Clelia; Kratzer, Peter; Magri, Rita. - STAMPA. - 1199(2010), pp. 21-22. ((Intervento presentato al convegno 29th International Conference on Physics of Semiconductors, ICPS 29 tenutosi a Rio de Janeiro (Brazil) nel 27 July 2008 through 1 August 2008 [10.1063/1.3295378].

In adsorption and diffusion on in-rich (2×4) reconstructed InGaAs surfaces on GaAs(001)

ROSINI, Marcello;RIGHI, Maria Clelia;MAGRI, Rita
2010

Abstract

We investigate the potential energy surface (PES) and the adsorption properties of an In adatom on InAs (2×4) reconstructed wetting layers (WLs) deposited on a GaAs substrate. The results are then used to derive the diffusion properties of a single In adatom on the WLs. We find that: (i) the adsorbate diffusion is highly anisotropic; (ii) the adsorption sites within the As dimers have to be taken into account since they strongly affect diffusion; (iii) the most stable adsorption sites are the ones within the dimers and those located besides the in-dimers.
29th International Conference on Physics of Semiconductors, ICPS 29
Rio de Janeiro (Brazil)
27 July 2008 through 1 August 2008
1199
21
22
Rosini, Marcello; Righi, Maria Clelia; Kratzer, Peter; Magri, Rita
In adsorption and diffusion on in-rich (2×4) reconstructed InGaAs surfaces on GaAs(001) / Rosini, Marcello; Righi, Maria Clelia; Kratzer, Peter; Magri, Rita. - STAMPA. - 1199(2010), pp. 21-22. ((Intervento presentato al convegno 29th International Conference on Physics of Semiconductors, ICPS 29 tenutosi a Rio de Janeiro (Brazil) nel 27 July 2008 through 1 August 2008 [10.1063/1.3295378].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1115989
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