We combine a kinetic model of MBE growth with the empirical pseudopotential band structure method to study the effects of interfacial disorder and segregation on the optical properties of InAs/GaSb superlattices. We fit the layer-by-layer growth model to the observed STM segregated profiles, extracting surface-to-subsurface atomic exchange energies, These are then used to obtain a detailed simulated model of segregated InAs/GaSb superlattices with atomic resolution. The application of the pseudopotential calculations to Such structures reveals remarkable electronic consequences of segregation, including a blue shift of band gap with increasing sample growth temperature. (C) 2002 Elsevier Science B.V. All rights reserved.
Segregation effects on the optical properties of (InAs)/(GaSb) superlattices / Magri, Rita; A., Zunger. - In: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. - ISSN 1386-9477. - STAMPA. - 13:2-4(2002), pp. 325-328. [10.1016/S1386-9477(01)00549-5]
Segregation effects on the optical properties of (InAs)/(GaSb) superlattices
MAGRI, Rita;
2002
Abstract
We combine a kinetic model of MBE growth with the empirical pseudopotential band structure method to study the effects of interfacial disorder and segregation on the optical properties of InAs/GaSb superlattices. We fit the layer-by-layer growth model to the observed STM segregated profiles, extracting surface-to-subsurface atomic exchange energies, These are then used to obtain a detailed simulated model of segregated InAs/GaSb superlattices with atomic resolution. The application of the pseudopotential calculations to Such structures reveals remarkable electronic consequences of segregation, including a blue shift of band gap with increasing sample growth temperature. (C) 2002 Elsevier Science B.V. All rights reserved.
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